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Ampleon ART1K6FH LDMOS RF Power Transistors

Ampleon ART1K6FH LDMOS RF Power Transistors are 1600W LDMOS RF power transistors based on Advanced Rugged Technology (ART). The Ampleon ART1K6FH transistors cover various ISM, broadcast, and communications applications. The unmatched transistors offer a 1MHz to 425MHz frequency range. Designed for broadband operation, the Ampleon ART1K6FH transistors deliver high efficiency and excellent thermal stability/ruggedness with no device degradation.

Features

  • High breakdown voltage enables class E operation at VDS = 48V
  • Suitable for VDS = 50V and 55V
  • Qualified up to a maximum of VDS = 55V
  • Characterized from 30V to 55V extended power range
  • Easy power control
  • Designed for broadband operation
  • Integrated dual-sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability

Applications

  • Broadcast
    • FM radio
    • VHF TVs
  • Communications
    • Non-cellular communications
    • UHF radar
  • Industrial, scientific, and medical
    • Plasma generators
    • MRI systems
    • CO2 lasers
    • Particle accelerators

Specifications

  • Limiting values
    • 177V maximum drain-source voltage
    • -9V to 13V gate-source voltage range
    • +225°C maximum junction temperature
  • DC
    • 191V typical drain-source breakdown voltage
    • 1.5V to 2.5V gate-source threshold voltage range
    • 2.8µA maximum drain leakage current
    • 81A typical drain cut-off current
    • 280nA maximum gate leakage current
    • 0.084Ω typical drain-source on-state resistance
  • AC
    • 1.65pF to 1.73pF typical feedback capacitance range
    • 620pF typical input capacitance
    • 185pF to 193pF typical output capacitance range
  • RF
    • 28.0dB typical power gain
    • -16dB typical input return loss
    • 74% typical drain efficiency
  • 1MHz to 425MHz frequency range
  • 0.077K/W typical junction-to-case thermal resistance
  • 0.018K/W typical junction-to-case transient thermal impedance
  • Package options
    • SOT539AN for ART1K6FH
    • SOT539BN for ART1K6FHS
    • SOT1248C for ART1K6FHG

Resources

Technical Documents

  • AR204002 - Measurement results of linear demo with ART1K6, this circuit works at 230MHz
  • AR211050 - Measurement results of a Class AB design for the 88MHz to 108MHz band with the ART1K6FH
  • AR212082 - Measurement results of the ART1K6FH LDMOS Device in Board #AR212082 tuned for 2MHz to 30MHz at 50V
  • AR212099 - Measurement results of the ART1K6FH LDMOS Device in Board #AR212099 tuned for 79MHz to 85MHz at 50V
发布日期: 2025-02-12 | 更新日期: 2025-11-11