Diodes Incorporated DMTH6004 N 通道增强模式 MOSFET
Diodes Inc. DMTH6004 N 通道增强模式 MOSFET 设计用于最大限度地降低导通电阻 (RDS(ON))，并保持卓越的的开关性能。 DMTH MOSFET 提供 60V 的 BVDSS 电压，额定温度为 175°C。 这些 MOSFET 非常适合用于高效率电源管理应用。 相关应用包括隔离式直流-直流主开关、同步整流器以及负载开关。
特性
- Rated to +175°C
- 100% unclamped inductive switching ensures a reliable and robust end application
- Low RDS(ON) minimizes power losses
- Low Qg minimizes switching losses
- Lead-free finish and RoHS compliant
- Halogen and Antimony free green device
- AEC-Q101 qualified standards for high-reliability
规范
- Materials
- POWERDI® 5060-8 case
- Molded plastic and green molding compound case
- 94V-0 UL flammability classification rating
- Level 1 per J-STD-020 moisture sensitivity
- Matte tin annealed over copper lead frame terminal finish
- 0.097gm weight (approximate)
- -55°C to +175°C operating and storage temperature range
- Ratings
- 60V drain-source voltage
- ±20V gate-source voltage
- 100A forward current
- 120A pulsed drain current
- 40A avalanche current
- 160mJ avalanche energy
发布日期: 2016-05-02
| 更新日期: 2022-03-11