IXYS Gen1 Trench Gate Power MOSFETs
IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
Features
- International standard packages
- Low RDS(ON)
- Avalanche rated
- High current handling capability
- Fast intrinsic rectifier
- Devices are easy to mount
- Offers space savings
- High power density
Applications
- Switch-mode and resonant-mode power supplies
- DC-DC converters
- Battery chargers
- Uninterrupted power supplies
- AC motor drives
- DC choppers
- High-speed power switching applications
Associated Product
IXYS HiPerFET™ Power MOSFETs
High-current HiPerFET™ power MOSFETs for hard switching & resonant mode applications.
发布日期: 2011-09-21
| 更新日期: 2024-02-25