MACOM CG2H40xx和CG2H30xx GaN 高电子迁移率晶体管 (HEMT)
Wolfspeed /Cree CG2H40xx和CG2H30xx GaN 高电子迁移率晶体管 (HEMT) 采用28V导轨式电源供电。CG2H40xx和CG2H30xx晶体管是面向各种射频和微波应用的通用型宽带解决方案。这些高电子迁移率晶体管 (HEMT) 具有高效率、高增益和高带宽，非常适合用于线性和压缩放大器电路。CG2H40xx和CG2H30xx晶体管可采用各种封装，包括螺丝固定、法兰封装、焊接封装、丸剂式封装以及2引脚法兰封装。典型应用包括宽带放大器、蜂窝基础设施和雷达。
特性
- Designed to operate from a 28V rail
- High efficiency
- High gain
- Wide bandwidth capabilities
- Rugged design for long, reliable operation
- Variety of package types
应用
- Broadband amplifiers
- Cellular infrastructure
- Radars
- Test instrumentation
规范
- 120V at +25°C drain-source voltage (VDSS)
- -10V to +2V gate-to-source voltage (VGS)
- +225°C operating junction temperature (TJ)
- -40°C to +150°C case operating temperature range (TC)
Development Tools
MACOM CG2H40xx and CG2H30xx Test Boards provide a demonstration and evaluation platform for the CG2H40xx and CG2H30xx GaN HEMTs. Each provides an example amplifier circuit specifically tailored to the target device.
View Results ( 5 ) Page
| 物料编号 | 数据表 | 增益 | 输出功率 |
|---|---|---|---|
| CG2H40010F |  |
16.5 dB | 10 W |
| CG2H40045F | |
16 dB | 45 W |
| CGHV40180F | |
20.3 dB | 180 W |
| CG2H40025F | |
15 dB | 25 W |
| CG2H30070F | |
12.4 dB | 70 W |
发布日期: 2017-12-26
| 更新日期: 2024-01-19