MACOM CGHV600 6GHz GaN HEMT
科锐 CGHV600 6GHz 氮化镓(GaN) 高电子迁移率晶体管(HEMT)具有比硅(Si)或砷化镓(GaAs) 晶体管更出色的性能。CGHV600 GaN HEMT 具有更高的击穿电压、更高的饱和电子漂移速度和更高的导热性。这些晶体管还具有更高的功率密度和更宽的带宽。CGHV600 系列设备适用于多种应用，包括蜂窝基础设施及 A 类、 AB 类及线性放大器。
特性
- CGHV60040D
- 18dB typical small-signal gain at 4GHz
- 17dB typical small-signal gain at 6GHz
- 65% typical power-added efficiency
- 40W typical PSAT
- 50V operation
- High breakdown voltage
- Up to 6GHz operation
- 820μm x 1800μm x 100μm bare die
- CGHV60075D5
- 19dB typical small-signal gain at 4GHz
- 17dB typical small-signal gain at 6GHz
- 65% typical power-added efficiency
- 75W typical PSAT
- 50V operation
- High breakdown voltage
- Up to 6GHz operation
- 3000μm x 820μm x 100μm bare die
应用
- 2-way private radio
- Broadband amplifiers
- Cellular infrastructure
- Test instrumentation
- Class A, AB, and linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms
CGHV60040D Mechanical Drawing
CGHV60075D5 Mechanical Drawing
Related HEMTs
MACOM CMPA0530002S GaN HEMT
专门设计用于实现高效率、高增益和高带宽能力。
发布日期: 2015-03-18
| 更新日期: 2024-01-18