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Microchip Technology 23LCV512/23LCV1024 串行 SRAM

Microchip 23LCV512和23LCV1024是512Kb和1Mb串行SRAM器件，可通过简单的SPI兼容串行总线访问。这些Microchip SRAM器件支持无限制的、对存储器阵列的读写，并支持通过连接到VBAT。 所需总线信号是一个时钟输入加独立数据输入和数据输出线路。对器件的访问通过一个芯片选择输入进行控制。此外，如果有应用需要更快数据速率，可支持SDI（串行双接口。）

Datasheets

特性

  • 23LCV512
    • SPI-compatible Bus Interface - 20MHz Clock rate (SPI/SDI Mode)
    • Low-Power CMOS Technology:
    • Read Current: 3mA at 3.6V, 20MHz
    • Standby Current: 4uA Max. at +85°C
    • Unlimited read and write cycles
    • Zero write time
    • 64K x 8-bit organization - 32 Byte Page
    • Battery-backed SRAM Support via Vbat Pin - Automatic switchover to Vbat
    • Sequential Mode reads and writes
    • High Reliability
    • Temperature Ranges Supported: -40°C to +85°C
    • Pb-Free and RoHS Compliant, Halogen Free
    • 8 Lead SOIC, TSSOP, and PDIP Packages
  • 23LCV1024
    • SPI-compatible Bus Interface - 20MHz Clock rate (SPI/SDI Mode)
    • Low-Power CMOS Technology:
    • Read Current: 3mA at 3.6V, 20MHz
    • Standby Current: 4uA Max. at +85°C
    • Unlimited read and write cycles
    • Zero write time
    • 128K x 8-bit organization - 32 Byte Page
    • Battery-backed SRAM Support via Vbat Pin - Automatic switchover to Vbat
    • Sequential Mode reads and writes
    • High Reliability
    • Temperature Ranges Supported: -40°C to +85°C
    • Pb-Free and RoHS Compliant, Halogen Free
    • 8 Lead SOIC, TSSOP, and PDIP Packages

SPI Timing

框图 - Microchip Technology 23LCV512/23LCV1024 串行 SRAM
发布日期: 2012-08-14 | 更新日期: 2022-03-11