Microchip Technology TC6321 N通道和P通道MOSFET对
Microchip TC6321 N通道和P通道MOSFET对集成了栅极源极电阻器和栅极源极齐纳二极管钳位。 该MOSFET对设计用于开关和放大需要高电压、大电流驱动以及快速开关速度的应用。 TC6321与MD12xx、MD17xx或MD18xx超声波MOSFET驱动器配对，可形成高速和高电压脉冲发生器电路。 脉冲发生器 电路。 TC6321 MOSFET的工作温度范围为-40ºC至150ºC，VDS 范围为-200V至200V。 TC6321 MOSFET对采用先进的垂直DMOS结构和硅栅制造工艺。 该组合可实现双极晶体管的功率处理能力，以及MOS器件固有的高输入阻抗和正温度系数。
The Microchip Technology TC6321 N and P-Channel MOSFET Pair utilizes an advanced vertical DMOS structure and the silicon gate manufacturing process. This combination gives the power-handling capabilities of bipolar transistors with high input impedance and positive temperature coefficients inherent in MOS devices.
特性
- Fast switching speeds
- Integrated gate-to-source resistor
- Integrated gate-to-source Zener diode
- Low threshold
- Low on-resistance
- Free from the secondary breakdown
- Low input capacitance
- Independent and electrically isolated N and P-channels
- Low input and output leakage
- 8-lead 6mm x 5mm VDFN package
应用
- High-voltage pulser
- Amplifiers
- Buffers
- Piezoelectric transducer drivers
- General purpose line drivers
- Logic-level interfaces
- Medical ultrasound applications
Typical Application Circuit
发布日期: 2017-05-29
| 更新日期: 2022-03-11