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Monolithic Power Systems (MPS) MP1918 100V Half-Bridge GaN MOSFET Drivers

Monolithic Power Systems (MPS) MP1918 100V Half-Bridge GaN MOSFET Drivers are designed for driving enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs. The Monolithic Power Systems (MPS) MP1918 features independent high-side (HS) and low-side (LS) PWM inputs and uses a bootstrap technique for the HS driver voltage. The device operates up to 100V and includes a charging technology that prevents the HS driver voltage from exceeding the VCC, protecting the gate from surpassing the GaN FETs maximum gate-to-source voltage rating.

Features

  • Independent High-Side (HS) and Low-Side (LS) TTL logic inputs
  • HS floating bias voltage rail operates up to 100VDC
  • Separate gate outputs for adjustable turn-on and turn-off capabilities
  • 3.7VCC to 5.5V VCC voltage range
  • Internal bootstrap switch supply voltage clamping
  • 0.27Ω/1.2Ω pull-down/-up resistance
  • Fast propagation times
  • Excellent propagation delay matching (typically 1.5ns)
  • Available in a QFN-14 (3mm x 3mm) package with wettable flanks

Applications

  • Half-bridge and full-bridge converters
  • Audio Class-D amplifiers
  • Synchronous buck converters
  • Power modules

TYPICAL APPLICATION

Monolithic Power Systems (MPS) MP1918 100V Half-Bridge GaN MOSFET Drivers
发布日期: 2024-09-11 | 更新日期: 2024-09-18