onsemi FDMS36xxS功率级非对称双MOSFET

Fairchild Semiconductor FDMS36xxS功率级非对称双MOSFET模块是市面上所有5mmx6mm双MOSFET解决方案中输出电流能力最高的产品。Fairchild FDMS36xxS非对称双MOSFET模块将一个控制和同步MOSFET模块以及一个单片肖特基体二极管集成在一个PQFN封装中。这些器件的开关节点已获内部连接,能够轻易进行同步降压转换器的布局和走线。控制MOSFET和同步MOSFET设计用于为高达30A的输出电流提供最佳功效。这些Fairchild Semiconductor器件可在高性能计算的额定击穿电压下,获得低于2mΩ的业界领先低端rDS(on)。FDMS36xxS MOSFET模块经过优化,可最大程度减小300kHz-600kHz范围的综合传导损耗和开关损耗,为负载点和多相同步降压DC-DC应用带来可靠的最高功效。

特性

  • Integrated control FET (high side) and synchronous FET (low side)
  • MOSFETs and Schottky body diode in 5mm x 6mm PQFN package
  • Reduces footprint area by replacing two or three 5mm x 6mm components
  • Provides high power density for point-of-load and multi-phase synchronous buck DC-DC applications
  • Clip technology reduces synchronous FET (low side) RDS(ON) to below 2mΩ
  • Shielded gate technology reduces switch node ringing, which eliminates need for external snubbers or gate resistors in most applications
  • Ultra-low source inductance on synchronous FET
  • Conventional pinout and footprint

应用

  • DC-DC synchronous-buck conversion
  • Desktops, notebooks, and servers
  • Telecommunications, routing, and switching

视频

发布日期: 2011-06-17 | 更新日期: 2024-02-01