STMicroelectronics MDmesh DK5 MOSFET
STMicroelectronics MDmesh DK5 MOSFET是超高电压快速恢复二极管，具有950V至1050V击穿电压。DK5具有低至45nC的极低栅极电荷，反向恢复时间(trr)为250ns（典型值）。因此，MDmesh DK5非常适合用于大功率应用中的ZVS LLC谐振转换器。这些应用包括工业焊工、等离子发生器、高频感应熔化/加热和X光机。另外，MDmesh DK5 MOSFET系列还具有0.12Ω (VGS=10V, ID=23A)的低导通电阻 (RDS(on))以及出色的耐用性，非常适合用于硬开关拓扑结构。DK5有各种通孔和SMD功率封装可供选择，包括长引脚TO-247和ISOTOP封装。
The MDmesh DK5 MOSFET series is also ideal for hard switching topologies thanks to the low on-resistance (RDS(on)) of 0.12Ω (VGS = 10V, ID = 23A ) and excellent ruggedness. The DK5 are available in a wide range of through-hole and SMD power packages including long-lead TO-247 and ISOTOP packages.
特性
- Fast-recovery body diode
- Best RDS(on) x area
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
应用
- Switching applications
Related MOSFETs
发布日期: 2017-06-14
| 更新日期: 2026-01-21