特性
- -500V to 1700V breakdown voltage range
- More than 30 package options for low-voltage to very-high-voltage Power MOSFETs, including
- Breakthrough top-side cooling HU3PAK package allowing higher power density and improved thermal management
- 4-lead TO-247 with dedicated control pin for increased switching efficiency
- H2PAK for high-current capability
- Highly innovative surface-mount leadless TO-LL
- 1mm-high surface-mount PowerFLAT family (2mm x 2mm to 8mm x 8mm) with excellent thermal performance thanks to a large metal drain pad
- Improved gate charge and lower on-state resistance to meet challenging efficiency requirements
- Intrinsic fast body diode option for selected product lines
- Wide portfolio of automotive-grade power MOSFETs
- Application-oriented technologies
应用
- Server and telecom power
- Microinverters
- Fast chargers
- Automotive
- Home and professional appliances
STripFET
STMicroelectronics专有的STripFET™II、III和V以及STripFET DeepGATE功率MOSFET技术针对此击穿电压范围进行了优化。这些器件具有高达480A的漏极电流和低至22mΩ的导通电阻、高雪崩耐受能力以及可选的逻辑电平驱动器,并采用多种封装:H2PAK2、I2PAK、ISOTOP、P2PAK、POLARPAK、PowerSO-10、SO-8、SOT-223、TO-220、TO-247、TO-252、TO-263、TO-92、VFDFPN-8。这些器件针对汽车开关和直流-直流转换器以及便携式产品电源管理用高效开关等应用进行了优化。查看产品列表
发布日期: 2019-11-08
| 更新日期: 2026-01-21

