Vishay Semiconductors SiA427DJ 8V TrenchFET®功率MOSFET
Vishay Siliconix SiA427DJ 8V TrenchFET®功率MOSFET在热增强型PowerPAK® SC-70 2mmx2mm占用面积中针对P通道器件导通电阻最低。Vishay Siliconix SiA427DJ的导通电阻，比与其性能最接近的P通道器件最多低47%。SiA427DJ TrenchFET功率MOSFET的1.2V低额定导通电阻使其成为用于低总线电压的理想产品。由于电源线路的波动，采用1.2V电源总线的应用也会从MOSFET在1.5V和1.8V时的低导通电阻中受益，使得SiA427DJ能够提供最佳的总体节能效果。Vishay Siliconix SiA427DJ的超小型PowerPAK SC-70封装经优化用于小型手持式电子设备。是用于手机、智能手机、MP3播放器、数码相机等负荷开关的理想产品。
Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The ultra-small PowerPAK SC-70 package of the Vishay Semiconductors SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more.
特性
- Halogen-free according to IEC 61249-2-21 definition
- TrenchFET® Power MOSFET
- 100% Rg Tested
- Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
- 16mΩ at 4.5V
- 26mΩ at 1.8V
- 32mΩ at 1.5V
- 95mΩ at 1.2V
- Compliant to RoHS Directive 2002/95/EC
应用
- Load switch, for 1.2 V power line for portable and handheld devices
Associated Products
Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
Package Dimensions
发布日期: 2011-08-18
| 更新日期: 2022-03-11