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NXP Semiconductors AFV10700H射频功率LDMOS晶体管

NXP Semiconductors AFV10700H射频功率LDMOS晶体管设计用于工作频率介于1030MHz至1090MHz的脉冲应用。LDMOS晶体管也可以在960MHz至1215MHz频段上降低功率使用。该器件适用于具有大占空比和长脉冲的国防和商业脉冲应用，如IFF、二次监视雷达、ADS-B应答器、DME和其他复杂脉冲链。 AFV10700H射频功率LDMOS晶体管基于NXP Airfast技术，并包含在紧凑型NI-780H-4L (AFV10700H) 或NI-780S-4L (AFV10700HS) 气腔型封装中，实现灵活设计。

特性

  • Internally input and output matched for broadband operation and ease of use
  • The device can be used single-ended, push-pull, or quadrature configuration
  • Qualified up to a maximum of 55VDD operation
  • High ruggedness, handles > 20:1VSWR
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
  • Recommended drivers: MRFE6VS25N (25W) or MRF6V10010N (10W)
  • RoHS Compliant
  • It is included in NXP Product Longevity Program with assured supply for a minimum of 15 years after launch.

规范

  • 1030MHz to 1090MHz frequency 
  • 50V supply voltage 
  • 700W peak output power 
  • Pulse test signal
  • 19.2dB at 1030MHz power gain
  • 58.5% efficiency 
  • 0.03°C/W thermal resistance 
  • Input and output impedance matching
  • AB Class 

Development Tools

NXP Semiconductors AFV10700H参考电路

用于对NXP AFV1070射频功率晶体管进行快速评估和原型设计。

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发布日期: 2017-08-18 | 更新日期: 2025-12-16