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onsemi 单N通道40V Dual-Cool®功率MOSFET

安森美半导体功率单N通道40V Dual-Cool®功率MOSFET具有超低漏源导通电阻 (RDS(on))，可最大限度地降低导通损耗。漏极-源极电压 (VDSS) 为40V，栅极-源极电压 (VGS) 为±20V。应用包括交流-直流和直流-直流电源中的同步整流器、电机开关和负载开关。NTMFSC0D9N04CL N通道MOSFET具有较低的电容和封装电感，采用双面冷却封装。

特性

  • 通过封装的顶部和底部实现散热
  • 顶部和底部采用标准5x6mm引脚分配
  • 40V VDSS和±20V VGS RDS(on)，可最大限度降低导通损耗
  • 低电容和封装电感
  • 双面冷却封装
  • MSL1稳健封装设计
  • 无铅、无卤/无BFR，符合RoHS指令

应用

  • 交流-直流和直流-直流电源中的同步整流器
  • 电机开关
  • 负载开关

规范

  • 40V, 60V, or 80V drain-source breakdown voltage options
  • 2V to 4V gate-source threshold voltage range
  • 154A to 313A continuous drain current range
  • 133W to 167W power dissipation range
  • 45nC to 72nC gate charge range
  • 8ns to 94.6ns rise time range
  • 20.2ns to 29ns typical turn-on delay time range
  • 6ns to 111ns fall time range
  • 35ns to 77.8ns typical turn-off delay time range
  • -55°C to +175°C operating temperature range

数据手册

  • NTMFSC0D8N04XM - Power, Single N-Channel MOSFET, DUAL-COOL 40V, 0.78mΩ, 310A
  • NTMFSC0D9N04CL - Power, Single N-Channel MOSFET, DUAL-COOL, DFN8 5mm x 6mm, 40V, 0.85mΩ, 313A
  • NTMFSC1D6N06C - Power, Single N-Channel MOSFET, STD Gate, DUAL-COOL, DFN8 5mm x 6mm, 60V, 1.5mΩ, 238A
  • NTMFSC1D9N08X - Power, Single N-Channel MOSFET, STD Gate, DUAL-COOL DFN8 5mm x 6mm, 80V, 1.9mΩ, 201A
  • NTMFSC2D6N08X - Power, Single N-Channel MOSFET, STD Gate, DUAL-COOL, DFN8 5mm x 6mm, 80V, 2.6mΩ, 154A
发布日期: 2019-10-24 | 更新日期: 2025-07-23