onsemi NVD5C功率MOSFET
安森美半导体NVD5C功率MOSFET符合AEC−Q101标准，可为汽车应用提供强大的解决方案。NVD5C功率MOSFET具有低RDS(on)，可最大限度地降低导通损耗，另外还具有低QG和电容，可将驱动器损耗降到最低。这些单N通道MOSFET采用紧凑型表面贴装DPAK封装，无铅、无卤/无BFR，符合RoHS指令。
特性
- Low on-resistance
- Minimal conduction losses
- High current capability
- Robust load performance
- 100% avalanche energy tested
- Voltage overstress safeguard
应用
- Low side driver
- High side driver
- Motor drive
- Automotive powertrain
- Automotive HVAC motors
- ABS pressure pumps
View Results ( 7 ) Page
| 物料编号 | 数据表 | Vds-漏源极击穿电压 | Id-连续漏极电流 | Rds On-漏源导通电阻 |
|---|---|---|---|---|
| NVD5C454NT4G |  |
40 V | 83 A | 4.2 mOhms |
| NVD5C446NT4G | |
40 V | 101 A | 2.9 mOhms |
| NVD5C434NT4G | |
40 V | 163 A | 1.7 mOhms |
| NVD5C478NLT4G | |
40 V | 45 A | 7.7 mOhms |
| NVD5C684NLT4G | |
60 V | 38 A | 13.7 mOhms |
| NVD5C688NLT4G | |
60 V | 17 A | 22.8 mOhms |
| NVD5C668NLT4G | |
60 V | 49 A | 7.4 mOhms |
发布日期: 2017-05-16
| 更新日期: 2022-03-11