STMicroelectronics SuperMESH™ 高压 MOSFET
意法半导体 齐纳保护 SuperMESH™ 功率 MOSFETs 是对标准带式 PowerMESH™ 布线的终极优化。 意法半导体 SuperMESH MOSFET 大幅压低了导通电阻，同时为要求最高的应用确保了非常好的 dv/dt 性能。SuperMESH 器件有最低限度的栅极电荷，并100% 通过雪崩测试，同时还改进了 ESD 功能，并具有新的高压基准。这些意法半导体 MOSFET 可用于开关应用。
Automotive Grade Product
1200V automotive-grade devices for battery management are now available. These devices have unequaled robustness at very high BVDSS and are AEC-Q101 qualified. The 1200V breakdown voltage of these devices protects automotive battery systems.
The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V, 1500V, and 1700V. ST has extended its portfolio of super-junction MDmesh K5 MOSFETs with the introduction of automotive-grade and 1700V devices. The devices provide the lowest RDS(on) per area and lowest gate charge (down to 47nC). This results in the industry's best figure of merit (FoM). The higher breakdown voltage ensures a higher safety margin for more robust and reliable applications. They are ideal for wide input voltage range auxiliary power supplies in high-power applications like solar inverters, factory automation, industrial drives, and welding.
特性
- Lowest RDS(on) for increased efficiency and more compact designs
- Extremely high dv/dt capability
- 100% avalanche tested
- Worldwide Figure of Merit (FoM)
- Ultra-low gate charge
- Zener-protected
应用
- Switch mode low power supplies (SMPS)
- DC-DC converters
- Low power, low-cost CFL
- Low power battery chargers
- Battery chargers and management
- Switching applications
- High current, high-speed switching
- Lighting
- Off-line power supplies, adaptors, and PFC
Featured Automotive Product
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