Vishay / Siliconix SiR870DP 100V功率MOSFET

Vishay Siliconix SiR870DP 100V N通道TrenchFET®功率MOSFET采用ThunderFET®技术,具有业界最低的导通电阻7.8mΩ(4.5V时)。Vishay Siliconix SiR870DP还具有业界最低的导通电阻6mΩ(10V时)。这些Vishay Siliconix ThunderFET装置在4.5V时还具有业界最低的优质因数(FOM)208 mΩ-nC。低导通电阻转换成较低的导电损耗并可降低节能环保解决方案中的功耗。SiR870DP 100V TrenchFET功率MOSFET设计用于较高的频率和开关应用。

特性

  • Low on-resistance of 7.8mΩ at 4.5V
  • Very low on-resistance of 6mΩ at 10V
  • Lower conduction losses and reduced power consumption for energy-saving green solutions
  • Low 208mΩ-nC FOM at 4.5V
  • PowerPAK SO-8 Package
  • 100VDS (V)
  • ±20VGS (V)

应用

  • Fixed telecom
  • DC/DC converters
  • Primary- and secondary-side switches

Package Dimensions

Vishay / Siliconix SiR870DP 100V功率MOSFET
发布日期: 2011-08-01 | 更新日期: 2022-03-11