Vishay Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offer co-packaged MOSFETs to reduce space and increase performance over two discrete. These Dual N-Channel TrenchFET Power MOSFETs combine two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET Power MOSFETs simplify the layout, reduces parasitic inductance from PCB traces, increases efficiency, and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Features
- TrenchFET Power MOSFETs
- 100% Rg and UIS Tested
- Halogen-free according to IEC 61249-2-21 definition
- Compliant to RoHS Directive 2002/95/EC
Applications
- System power
- Notebook
- Servers
- POL
- Synchronous Buck Converter
View Results ( 2 ) Page
| 物料编号 | 封装 / 箱体 | Vds-漏源极击穿电压 | Id-连续漏极电流 | Rds On-漏源导通电阻 | Pd-功率耗散 | 数据表 |
|---|---|---|---|---|---|---|
| SIZ998DT-T1-GE3 | PowerPAIR-6x5-8 | 30 V | 20 A, 60 A | 4.7 mOhms, 2.2 mOhms | 20.2 W, 32.9 W | ![]() |
| SIZ340DT-T1-GE3 | PowerPAIR-3x3-8 | 30 V | 30 A, 40 A | 9.5 mOhms, 5.1 mOhms | 16.7 W, 31 W | ![]() |
发布日期: 2012-01-24
| 更新日期: 2024-08-15

