Vishay Dual N-Channel TrenchFET® Power MOSFETs

Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offer co-packaged MOSFETs to reduce space and increase performance over two discrete. These Dual N-Channel TrenchFET Power MOSFETs combine two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET Power MOSFETs simplify the layout, reduces parasitic inductance from PCB traces, increases efficiency, and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.

Features

  • TrenchFET Power MOSFETs
  • 100% Rg and UIS Tested
  • Halogen-free according to IEC 61249-2-21 definition
  • Compliant to RoHS Directive 2002/95/EC

Applications

  • System power
  • Notebook
  • Servers
  • POL
  • Synchronous Buck Converter
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物料编号 封装 / 箱体 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Pd-功率耗散 数据表
SIZ998DT-T1-GE3 PowerPAIR-6x5-8 30 V 20 A, 60 A 4.7 mOhms, 2.2 mOhms 20.2 W, 32.9 W SIZ998DT-T1-GE3 数据表
SIZ340DT-T1-GE3 PowerPAIR-3x3-8 30 V 30 A, 40 A 9.5 mOhms, 5.1 mOhms 16.7 W, 31 W SIZ340DT-T1-GE3 数据表
发布日期: 2012-01-24 | 更新日期: 2024-08-15