Wolfspeed CG2H40xx和CG2H30xx GaN 高电子迁移率晶体管 (HEMT)

Wolfspeed /Cree CG2H40xx和CG2H30xx GaN 高电子迁移率晶体管 (HEMT) 采用28V导轨式电源供电。CG2H40xx和CG2H30xx晶体管是面向各种射频和微波应用的通用型宽带解决方案。这些高电子迁移率晶体管 (HEMT) 具有高效率、高增益和高带宽，非常适合用于线性和压缩放大器电路。CG2H40xx和CG2H30xx晶体管可采用各种封装，包括螺丝固定、法兰封装、焊接封装、丸剂式封装以及2引脚法兰封装。典型应用包括宽带放大器、蜂窝基础设施和雷达。

特性

  • High Efficiency
  • High Gain
  • Wide Bandwidth Capabilities
  • Rugged Design for Long, Reliable Operation

应用

  • Broadband Amplifiers
  • Cellular Infrastructure
  • Radar
  • Test Instrumentation

规范

  • Drain-Source Voltage (VDSS): 120V @ 25˚C
  • Gate-to-Source Voltage (VGS): -10V to +2V
  • Storage Temperature (TSTG): -65˚C to +150˚C
  • Operating Junction Temperature (TJ): 225˚C
  • Case Operating Temperature (TC): -40˚C to +150˚C

Development Tools

Wolfspeed CG2H40xx和CG2H30xx GaN 高电子迁移率晶体管 (HEMT)

Wolfspeed CG2H40xx and CG2H30xx Test Boards provide a demonstration and evaluation platform for the CG2H40xx and CG2H30xx GaN HEMTs. Each provides an example amplifier circuit specifically tailored to the target device.

View Wolfspeed CG2H40xx and CG2H30xx Test Boards

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