|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R075M2HXTMA1
- Infineon Technologies
-
1:
¥62.4551
-
808库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
808库存量
|
|
|
¥62.4551
|
|
|
¥40.6913
|
|
|
¥29.1992
|
|
|
¥25.8092
|
|
|
¥23.8204
|
|
|
查看
|
|
|
¥22.6678
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
|
+ 175 C
|
124 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMLT65R075M2HXTMA1
- Infineon Technologies
-
1:
¥54.8389
-
771库存量
-
新产品
|
Mouser 零件编号
726-IMLT65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
771库存量
|
|
|
¥54.8389
|
|
|
¥35.5724
|
|
|
¥25.312
|
|
|
¥22.4192
|
|
|
¥18.7806
|
|
|
查看
|
|
|
¥19.7637
|
|
|
¥18.2834
|
|
|
报价
|
|
最低： 1
倍数： 1
:
1,800
|
|
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
650 V
|
34.7 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
187 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R075M2HXUMA1
- Infineon Technologies
-
1:
¥56.2514
-
851库存量
-
新产品
|
Mouser 零件编号
726-IMT65R075M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
851库存量
|
|
|
¥56.2514
|
|
|
¥36.5555
|
|
|
¥26.0578
|
|
|
¥22.9955
|
|
|
¥19.3569
|
|
|
查看
|
|
|
¥20.3513
|
|
|
¥18.4416
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
|
TOLL-8
|
|
|
650 V
|
|
75 mOhms
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R075M2HXTMA1
- Infineon Technologies
-
1:
¥56.0819
-
656库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
656库存量
|
|
|
¥56.0819
|
|
|
¥36.725
|
|
|
¥27.0522
|
|
|
¥24.069
|
|
|
¥23.3232
|
|
|
¥21.5039
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
LHSOF-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
141 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R075M2HXKSA1
- Infineon Technologies
-
1:
¥67.2463
-
183库存量
-
新产品
|
Mouser 零件编号
726-IMZA65R075M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
183库存量
|
|
|
¥67.2463
|
|
|
¥41.6857
|
|
|
¥33.5045
|
|
|
¥29.6964
|
|
|
查看
|
|
|
¥24.8148
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
26.6 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R020M2HXUMA1
- Infineon Technologies
-
1:
¥128.7861
-
1,930库存量
-
新产品
|
Mouser 零件编号
726-IMT65R020M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,930库存量
|
|
|
¥128.7861
|
|
|
¥98.1066
|
|
|
¥81.7216
|
|
|
¥72.8737
|
|
|
¥72.7946
|
|
|
¥68.9074
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R010M2HXTMA1
- Infineon Technologies
-
1:
¥222.3388
-
256库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R010M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
256库存量
|
|
|
¥222.3388
|
|
|
¥141.6907
|
|
|
¥138.1312
|
|
|
¥137.634
|
|
|
¥113.9831
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
158 A
|
13.1 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R026M2HXTMA1
- Infineon Technologies
-
1:
¥117.7008
-
950库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
950库存量
|
|
|
¥117.7008
|
|
|
¥89.6655
|
|
|
¥74.693
|
|
|
¥66.5909
|
|
|
¥63.0314
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
33 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
263 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R033M2HXTMA1
- Infineon Technologies
-
1:
¥96.4455
-
280库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
280库存量
|
|
|
¥96.4455
|
|
|
¥69.0656
|
|
|
¥58.9747
|
|
|
¥54.918
|
|
|
¥46.895
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R060M2HXTMA1
- Infineon Technologies
-
1:
¥68.5684
-
416库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R060M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
416库存量
|
|
|
¥68.5684
|
|
|
¥43.9231
|
|
|
¥36.6459
|
|
|
¥33.1655
|
|
|
¥26.3855
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
34.9 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
18 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R010M2HXUMA1
- Infineon Technologies
-
1:
¥216.3837
-
365库存量
-
2,250在途量
-
新产品
|
Mouser 零件编号
726-IMDQ65R010M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
365库存量
2,250在途量
在途量:
750 预期 2026/8/13
1,500 预期 2026/9/24
|
|
|
¥216.3837
|
|
|
¥173.2064
|
|
|
¥149.8041
|
|
|
¥141.8602
|
|
|
¥141.8602
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
154 A
|
13.1 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
113 nC
|
- 55 C
|
+ 175 C
|
651 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R015M2HXUMA1
- Infineon Technologies
-
1:
¥151.872
-
901库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R015M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
901库存量
|
|
|
¥151.872
|
|
|
¥112.5819
|
|
|
¥102.8187
|
|
|
¥85.9365
|
|
|
¥84.6144
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
94 A
|
18 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
79 nC
|
- 55 C
|
+ 175 C
|
499 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R020M2HXUMA1
- Infineon Technologies
-
1:
¥145.0016
-
499库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R020M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
499库存量
|
|
|
¥145.0016
|
|
|
¥110.4236
|
|
|
¥91.982
|
|
|
¥82.0493
|
|
|
¥77.5858
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
97 A
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
394 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R033M2HXTMA1
- Infineon Technologies
-
1:
¥92.5583
-
929库存量
-
1,800预期 2026/9/24
-
新产品
|
Mouser 零件编号
726-IMLT65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
929库存量
1,800预期 2026/9/24
|
|
|
¥92.5583
|
|
|
¥61.1217
|
|
|
¥52.1156
|
|
|
¥47.8894
|
|
|
¥43.0078
|
|
|
¥42.9287
|
|
最低： 1
倍数： 1
:
1,800
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R010M2HXUMA1
- Infineon Technologies
-
1:
¥201.0835
-
840库存量
-
2,000在途量
-
新产品
|
Mouser 零件编号
726-IMT65R010M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
840库存量
2,000在途量
|
|
|
¥201.0835
|
|
|
¥160.9685
|
|
|
¥139.216
|
|
|
¥131.8484
|
|
|
¥125.3961
|
|
|
¥124.8198
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
168 A
|
13.1 mOhms
|
- 7V, + 23 V
|
4.5 V
|
113 nC
|
- 55 C
|
+ 175 C
|
681 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R033M2HXUMA1
- Infineon Technologies
-
1:
¥96.9427
-
2,302库存量
-
2,000预期 2027/7/6
-
新产品
|
Mouser 零件编号
726-IMT65R033M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
2,302库存量
2,000预期 2027/7/6
|
|
|
¥96.9427
|
|
|
¥70.1391
|
|
|
¥58.4775
|
|
|
¥52.1156
|
|
|
¥52.0252
|
|
|
¥49.3019
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R060M2HXUMA1
- Infineon Technologies
-
1:
¥62.8619
-
870库存量
-
2,000预期 2026/7/16
-
新产品
|
Mouser 零件编号
726-IMT65R060M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
870库存量
2,000预期 2026/7/16
|
|
|
¥62.8619
|
|
|
¥42.1038
|
|
|
¥33.8322
|
|
|
¥30.1032
|
|
|
¥28.4534
|
|
|
¥26.8827
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
41.4 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
208 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMTA65R026M2HXTMA1
- Infineon Technologies
-
1:
¥94.3776
-
1,968库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
1,968库存量
|
|
|
¥94.3776
|
|
|
¥64.6021
|
|
|
¥55.5847
|
|
|
¥52.0252
|
|
|
查看
|
|
|
¥46.0701
|
|
|
¥48.6352
|
|
|
¥46.0701
|
|
|
报价
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
79 A
|
33 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
- IMTA65R033M2HXTMA1
- Infineon Technologies
-
1:
¥88.0044
-
1,712库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
|
|
1,712库存量
|
|
|
¥88.0044
|
|
|
¥57.6526
|
|
|
¥44.4994
|
|
|
¥41.358
|
|
|
¥40.4427
|
|
|
¥35.9001
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
68 A
|
41 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
¥197.6031
-
259库存量
-
新产品
|
Mouser 零件编号
726-IMW65R010M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
259库存量
|
|
|
¥197.6031
|
|
|
¥151.1262
|
|
|
¥142.1879
|
|
|
¥124.9893
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
130 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
¥126.8877
-
538库存量
-
240预期 2026/12/24
-
新产品
|
Mouser 零件编号
726-IMW65R026M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
538库存量
240预期 2026/12/24
|
|
|
¥126.8877
|
|
|
¥96.6941
|
|
|
¥80.569
|
|
|
¥71.7098
|
|
|
¥67.913
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
¥105.7115
-
237库存量
-
新产品
|
Mouser 零件编号
726-IMW65R033M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
237库存量
|
|
|
¥105.7115
|
|
|
¥67.4158
|
|
|
¥60.8844
|
|
|
¥52.2738
|
|
|
¥48.477
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
53 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
194 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R020M2HXTMA1
- Infineon Technologies
-
1:
¥123.6559
-
9,343库存量
-
2,000预期 2026/7/27
|
Mouser 零件编号
726-IMTA65R020M2HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
9,343库存量
2,000预期 2026/7/27
|
|
|
¥123.6559
|
|
|
¥89.3378
|
|
|
¥71.2239
|
|
|
¥65.0202
|
|
|
查看
|
|
|
¥60.0482
|
|
|
¥60.0482
|
|
|
¥60.0482
|
|
|
报价
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
|
|
20 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R026M2HXUMA1
- Infineon Technologies
-
1:
¥113.3164
-
48库存量
-
2,000预期 2027/5/27
-
新产品
|
Mouser 零件编号
726-IMT65R026M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
48库存量
2,000预期 2027/5/27
|
|
|
¥113.3164
|
|
|
¥84.4562
|
|
|
¥70.3877
|
|
|
¥62.7037
|
|
|
¥62.6133
|
|
|
¥59.3024
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
81 A
|
33 mOhms
|
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
365 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
- IMW65R060M2HXKSA1
- Infineon Technologies
-
1:
¥77.6649
-
272库存量
-
720在途量
-
新产品
|
Mouser 零件编号
726-IMW65R060M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
|
|
272库存量
720在途量
在途量:
480 预期 2026/7/21
240 预期 2026/8/10
|
|
|
¥77.6649
|
|
|
¥54.6807
|
|
|
¥44.2508
|
|
|
¥39.211
|
|
|
¥35.2334
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
32.8 A
|
73 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
CoolSiC
|
|
