650V CoolSiC™ M1沟槽式功率MOSFET

英飞凌科技  650V CoolSiC ™ M1沟槽式功率MOSFET结合了碳化硅的优异物理特性和独特功能,从而提高了器件性能、可靠性和易用性。CoolSiC M1 MOSFET基于先进的沟槽半导体工艺,优化用于实现最低应用损耗和 最高运行可靠性。这些器件适用于高温和恶劣环境,能够简化系统部署,降低成本,并实现最高的系统效率。 

结果: 25
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,995库存量
剪切带
¥77.7553
¥45.2452
¥41.7761
¥39.1206
卷轴
¥37.2222
最低: 1
倍数: 1
: 1,000
SMD/SMT 1 Channel 650 V 39 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 161 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 335库存量
¥76.9304
¥53.9349
¥50.5449
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 50 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,000库存量
剪切带
¥51.528
¥27.2104
¥20.1027
¥20.0123
卷轴
¥20.0123
最低: 1
倍数: 1
: 1,000
SMD/SMT 1 Channel 650 V 17 A 217 mOhms - 5 V, + 23 V 5.7 V 27 nC - 55 C + 175 C 85 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 643库存量
剪切带
¥150.7081
¥93.0555
¥90.4904
卷轴
¥88.0948
最低: 1
倍数: 1
: 1,000
SMD/SMT 1 Channel 650 V 64 A 30 mOhms - 5 V, + 23 V 5.7 V 67 nC - 55 C + 175 C 300 W Enhancement CoolSiC


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 753库存量
剪切带
¥55.7542
¥32.6683
¥29.7755
¥28.0353
卷轴
¥26.8827
最低: 1
倍数: 1
: 1,000
SMD/SMT 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 861库存量
剪切带
¥61.4607
¥38.6234
¥35.4029
¥33.335
卷轴
¥33.0073
最低: 1
倍数: 1
: 1,000
SMD/SMT 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,019库存量
剪切带
¥83.8686
¥46.4091
¥43.505
¥42.8496
卷轴
¥41.1885
最低: 1
倍数: 1
: 1,000
SMD/SMT 1 Channel 650 V 45 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 175 C 183 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,701库存量
¥120.9326
¥72.7042
¥71.8002
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 341库存量
¥88.9988
¥48.3866
¥44.748
¥44.4203
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 299库存量
¥86.106
¥49.5505
¥45.9119
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 657库存量
剪切带
¥42.2733
¥21.922
¥19.9332
¥17.4585
卷轴
¥16.4641
最低: 1
倍数: 1
: 1,000
SMD/SMT 1 Channel 650 V 6 A 346 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 465库存量
¥119.8591
¥67.2463
¥65.5061
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 58 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 314库存量
¥65.8451
¥37.7985
¥35.1543
¥33.8322
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 463库存量
¥62.6133
¥32.8378
¥30.1936
¥27.8771
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 235库存量
¥121.7575
¥68.4102
¥66.8395
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 53 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 128库存量
¥77.3372
¥44.4203
¥39.6178
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 28库存量
¥61.0426
¥38.6234
¥36.2278
¥33.1655
¥31.5948
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 24 A 111 mOhms - 5 V, + 23 V 5.7 V 19 nC - 55 C + 175 C 104 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 17库存量
3,600在途量
¥131.5998
¥74.5235
¥73.8681
¥73.7777
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 无库存交货期 52 周
卷轴
¥60.4663
最低: 1,000
倍数: 1,000
: 1,000
SMD/SMT 1 Channel 650 V 63 A 42 mOhms - 5 V, + 23 V 5.7 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 无库存交货期 52 周
卷轴
¥50.9517
最低: 1,000
倍数: 1,000
: 1,000
SMD/SMT 1 Channel 650 V 54 A 51 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 211 W Enhancement CoolSiC


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 无库存交货期 52 周
卷轴
¥32.092
最低: 1,000
倍数: 1,000
: 1,000
SMD/SMT 1 Channel 650 V 28 A 111 mOhms - 5 V, + 23 V 5.7 V 44 nC - 55 C + 175 C 126 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 无库存交货期 52 周
¥96.6941
¥53.0196
¥49.1324
¥48.8838
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 46 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 无库存交货期 52 周
¥83.4618
¥51.2003
¥42.5106
¥38.9624
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 无库存交货期 52 周
¥72.4556
¥42.601
¥35.3238
¥35.1543
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 无库存交货期 52 周
¥37.5499
¥32.8378
最低: 240
倍数: 240
Through Hole TO-247-4 1 Channel 650 V 26 A 111 mOhms - 5 V, + 23 V 5.7 V 19 nC - 55 C + 175 C 104 W Enhancement