|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
¥77.7553
-
1,995库存量
-
NRND
|
Mouser 零件编号
726-IMBG65R057M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,995库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
39 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
161 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R039M1HXKSA1
- Infineon Technologies
-
1:
¥76.9304
-
335库存量
-
NRND
|
Mouser 零件编号
726-IMZA65R039M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
335库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
50 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R163M1HXTMA1
- Infineon Technologies
-
1:
¥51.528
-
1,000库存量
-
NRND
|
Mouser 零件编号
726-IMBG65R163M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,000库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
17 A
|
217 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
27 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
¥150.7081
-
643库存量
-
NRND
|
Mouser 零件编号
726-IMBG65R022M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
643库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
64 A
|
30 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
67 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
¥55.7542
-
753库存量
-
NRND
|
Mouser 零件编号
726-IMBG65R107M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
753库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
24 A
|
141 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
35 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R072M1HXTMA1
- Infineon Technologies
-
1:
¥61.4607
-
861库存量
-
NRND
|
Mouser 零件编号
726-IMBG65R072M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
861库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
33 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
140 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R048M1HXTMA1
- Infineon Technologies
-
1:
¥83.8686
-
1,019库存量
-
NRND
|
Mouser 零件编号
726-IMBG65R048M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,019库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
45 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 175 C
|
183 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
¥120.9326
-
1,701库存量
-
NRND
|
Mouser 零件编号
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,701库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
¥88.9988
-
341库存量
-
NRND
|
Mouser 零件编号
726-IMW65R048M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
341库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
¥86.106
-
299库存量
-
NRND
|
Mouser 零件编号
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
299库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R260M1HXTMA1
- Infineon Technologies
-
1:
¥42.2733
-
657库存量
-
NRND
|
Mouser 零件编号
726-IMBG65R260M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
657库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
6 A
|
346 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R030M1HXKSA1
- Infineon Technologies
-
1:
¥119.8591
-
465库存量
-
NRND
|
Mouser 零件编号
726-IMW65R030M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
465库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
58 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R072M1HXKSA1
- Infineon Technologies
-
1:
¥65.8451
-
314库存量
-
NRND
|
Mouser 零件编号
726-IMW65R072M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
314库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
26 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R107M1HXKSA1
- Infineon Technologies
-
1:
¥62.6133
-
463库存量
-
NRND
|
Mouser 零件编号
726-IMW65R107M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
463库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R030M1HXKSA1
- Infineon Technologies
-
1:
¥121.7575
-
235库存量
-
NRND
|
Mouser 零件编号
726-IMZA65R030M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
235库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
53 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R057M1HXKSA1
- Infineon Technologies
-
1:
¥77.3372
-
128库存量
-
NRND
|
Mouser 零件编号
726-IMZA65R057M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
128库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R083M1HXKSA1
- Infineon Technologies
-
1:
¥61.0426
-
28库存量
-
NRND
|
Mouser 零件编号
726-IMW65R083M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
28库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
24 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
19 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R027M1HXKSA1
- Infineon Technologies
-
1:
¥131.5998
-
17库存量
-
3,600在途量
-
NRND
|
Mouser 零件编号
726-IMZA65R027M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
17库存量
3,600在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
59 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R030M1HXTMA1
- Infineon Technologies
-
1,000:
¥60.4663
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMBG65R030M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
最低: 1,000
倍数: 1,000
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
63 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R039M1HXTMA1
- Infineon Technologies
-
1,000:
¥50.9517
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMBG65R039M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
最低: 1,000
倍数: 1,000
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
54 A
|
51 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R083M1HXTMA1
- Infineon Technologies
-
1,000:
¥32.092
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMBG65R083M1HXTM
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
最低: 1,000
倍数: 1,000
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
28 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
44 nC
|
- 55 C
|
+ 175 C
|
126 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R039M1HXKSA1
- Infineon Technologies
-
1:
¥96.6941
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMW65R039M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
46 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R057M1HXKSA1
- Infineon Technologies
-
1:
¥83.4618
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMW65R057M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
¥72.4556
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R083M1HXKSA1
- Infineon Technologies
-
240:
¥37.5499
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMZA65R083M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
最低: 240
倍数: 240
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
26 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
19 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
|
|