|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ75R040M2HXTMA1
- Infineon Technologies
-
1:
¥92.2306
-
80库存量
-
新产品
|
Mouser 零件编号
726-IMDQ75R040M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
80库存量
|
|
|
¥92.2306
|
|
|
¥65.1784
|
|
|
¥54.2626
|
|
|
¥48.3866
|
|
|
¥45.2452
|
|
最低: 1
倍数: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22
|
|
|
|
碳化硅MOSFET SIC MOS TO247-4L 70MOHM M3S 1200V
- NVH4L070N120M3S-IE
- onsemi
-
1:
¥155.5106
-
450库存量
-
新产品
|
Mouser 零件编号
863-H4L070N120M3S-IE
新产品
|
onsemi
|
碳化硅MOSFET SIC MOS TO247-4L 70MOHM M3S 1200V
|
|
450库存量
|
|
最低: 1
倍数: 1
最大: 45
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
¥392.4829
-
5库存量
-
960在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R007M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
5库存量
960在途量
在途量:
240 预期 2027/6/3
720 预期 2027/6/10
|
|
|
¥392.4829
|
|
|
¥277.4263
|
|
|
¥239.6278
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
PG-TO247-4-U07
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥142.606
-
1,559库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R022M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,559库存量
|
|
最低: 1
倍数: 1
最大: 50
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
¥132.5151
-
1,832库存量
-
新产品
|
Mouser 零件编号
726-IMCQ120R026M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,832库存量
|
|
|
¥132.5151
|
|
|
¥100.909
|
|
|
¥84.0381
|
|
|
¥74.9416
|
|
|
¥70.06
|
|
最低: 1
倍数: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
¥102.152
-
255库存量
-
750预期 2026/8/13
-
新产品
|
Mouser 零件编号
726-IMCQ120R040M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
255库存量
750预期 2026/8/13
|
|
|
¥102.152
|
|
|
¥73.8681
|
|
|
¥61.5398
|
|
|
¥54.8389
|
|
|
¥51.2794
|
|
最低: 1
倍数: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
¥81.3148
-
335库存量
-
750预期 2026/10/8
-
新产品
|
Mouser 零件编号
726-IMCQ120R053M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
335库存量
750预期 2026/10/8
|
|
|
¥81.3148
|
|
|
¥54.4321
|
|
|
¥40.8608
|
|
|
¥37.8889
|
|
|
¥37.4708
|
|
最低: 1
倍数: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
¥76.4332
-
856库存量
-
新产品
|
Mouser 零件编号
726-IMCQ120R078M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
856库存量
|
|
|
¥76.4332
|
|
|
¥53.7654
|
|
|
¥43.505
|
|
|
¥38.6234
|
|
|
¥34.239
|
|
最低: 1
倍数: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
|
|
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R033M2HXTMA1
- Infineon Technologies
-
1:
¥92.5583
-
929库存量
-
1,800预期 2026/10/8
-
新产品
|
Mouser 零件编号
726-IMLT65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
929库存量
1,800预期 2026/10/8
|
|
|
¥92.5583
|
|
|
¥61.1217
|
|
|
¥52.1156
|
|
|
¥47.8894
|
|
|
¥43.0078
|
|
|
¥42.9287
|
|
最低: 1
倍数: 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R010M2HXUMA1
- Infineon Technologies
-
1:
¥201.0835
-
840库存量
-
2,000在途量
-
新产品
|
Mouser 零件编号
726-IMT65R010M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
840库存量
2,000在途量
|
|
|
¥201.0835
|
|
|
¥160.9685
|
|
|
¥139.216
|
|
|
¥131.8484
|
|
|
¥125.3961
|
|
|
¥124.8198
|
|
最低: 1
倍数: 1
:
2,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HSOF-8
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
¥197.6031
-
259库存量
-
新产品
|
Mouser 零件编号
726-IMW65R010M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
259库存量
|
|
|
¥197.6031
|
|
|
¥151.1262
|
|
|
¥142.1879
|
|
|
¥124.9893
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
¥126.8877
-
538库存量
-
240预期 2026/12/24
-
新产品
|
Mouser 零件编号
726-IMW65R026M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
538库存量
240预期 2026/12/24
|
|
|
¥126.8877
|
|
|
¥96.6941
|
|
|
¥80.569
|
|
|
¥71.7098
|
|
|
¥67.913
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
¥105.7115
-
237库存量
-
新产品
|
Mouser 零件编号
726-IMW65R033M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
237库存量
|
|
|
¥105.7115
|
|
|
¥67.4158
|
|
|
¥60.8844
|
|
|
¥52.2738
|
|
|
¥48.477
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥220.2709
-
625库存量
-
240预期 2026/9/24
-
新产品
|
Mouser 零件编号
726-IMZC120R012M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
625库存量
240预期 2026/9/24
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥183.0487
-
609库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R017M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
609库存量
|
|
最低: 1
倍数: 1
最大: 20
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥141.2839
-
451库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R026M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
451库存量
|
|
最低: 1
倍数: 1
最大: 20
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥103.7227
-
1,001库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R034M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
1,001库存量
|
|
最低: 1
倍数: 1
最大: 70
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
¥84.0381
-
739库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R053M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
739库存量
|
|
|
¥84.0381
|
|
|
¥49.5505
|
|
|
¥41.9343
|
|
|
¥41.8552
|
|
|
¥41.1885
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
碳化硅MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
- IXSA40N120L2-7TR
- IXYS
-
1:
¥80.4786
-
790库存量
-
新产品
|
Mouser 零件编号
747-IXSA40N120L2-7TR
新产品
|
IXYS
|
碳化硅MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
|
|
790库存量
|
|
|
¥80.4786
|
|
|
¥55.1666
|
|
|
¥41.6857
|
|
|
¥39.4596
|
|
|
¥39.4596
|
|
最低: 1
倍数: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7L
|
|
|
|
碳化硅MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
- IXSA80N120L2-7TR
- IXYS
-
1:
¥118.4466
-
760库存量
-
新产品
|
Mouser 零件编号
747-IXSA80N120L2-7TR
新产品
|
IXYS
|
碳化硅MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
|
|
760库存量
|
|
|
¥118.4466
|
|
|
¥82.9646
|
|
|
¥68.9865
|
|
|
¥65.3479
|
|
|
¥65.3479
|
|
最低: 1
倍数: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7L
|
|
|
|
碳化硅MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
- IXSH40N120L2KHV
- IXYS
-
1:
¥81.8911
-
394库存量
-
新产品
|
Mouser 零件编号
747-IXSH40N120L2KHV
新产品
|
IXYS
|
碳化硅MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
|
|
394库存量
|
|
|
¥81.8911
|
|
|
¥55.0084
|
|
|
¥40.6122
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
碳化硅MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
- IXSH80N120L2KHV
- IXYS
-
1:
¥123.0005
-
292库存量
-
新产品
|
Mouser 零件编号
747-IXSH80N120L2KHV
新产品
|
IXYS
|
碳化硅MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
|
|
292库存量
|
|
|
¥123.0005
|
|
|
¥86.2755
|
|
|
¥67.8226
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
碳化硅MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
- GP3T020A120H
- SemiQ
-
1:
¥104.0617
-
209库存量
-
210在途量
-
新产品
|
Mouser 零件编号
148-GP3T020A120H
新产品
|
SemiQ
|
碳化硅MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
|
|
209库存量
210在途量
在途量:
90 预期 2026/8/3
60 预期 2026/8/7
60 预期 2026/8/10
|
|
|
¥104.0617
|
|
|
¥62.4551
|
|
|
¥62.3647
|
|
|
¥53.7654
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
碳化硅MOSFET Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
- GP3T040A120H
- SemiQ
-
1:
¥69.3933
-
70库存量
-
新产品
|
Mouser 零件编号
148-GP3T040A120H
新产品
|
SemiQ
|
碳化硅MOSFET Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
|
|
70库存量
|
|
|
¥69.3933
|
|
|
¥47.1436
|
|
|
¥40.115
|
|
|
¥31.5948
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|
|
|
碳化硅MOSFET Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
- GP3T080A120H
- SemiQ
-
1:
¥50.7822
-
85库存量
-
120在途量
-
新产品
|
Mouser 零件编号
148-GP3T080A120H
新产品
|
SemiQ
|
碳化硅MOSFET Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
|
|
85库存量
120在途量
|
|
|
¥50.7822
|
|
|
¥33.9113
|
|
|
¥26.3855
|
|
|
¥20.8485
|
|
最低: 1
倍数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
|