|
|
桥式整流器 TEA2206T/1
- TEA2206T/1J
- NXP Semiconductors
-
1:
¥32.4197
-
1,774库存量
|
Mouser 零件编号
771-TEA2206T/1J
|
NXP Semiconductors
|
桥式整流器 TEA2206T/1
|
|
1,774库存量
|
|
|
¥32.4197
|
|
|
¥26.1369
|
|
|
¥24.4871
|
|
|
¥24.1481
|
|
|
查看
|
|
|
¥20.7581
|
|
|
¥22.9164
|
|
|
¥22.1706
|
|
|
¥22.0011
|
|
|
¥20.7581
|
|
最低: 1
倍数: 1
:
2,500
|
|
Bridge Rectifiers
|
|
SMD/SMT
|
SOIC-8
|
|
|
|
桥式整流器 TEA2209T/1
- TEA2209T/1J
- NXP Semiconductors
-
1:
¥60.3872
-
1,096库存量
|
Mouser 零件编号
771-TEA2209T/1J
|
NXP Semiconductors
|
桥式整流器 TEA2209T/1
|
|
1,096库存量
|
|
|
¥60.3872
|
|
|
¥45.5729
|
|
|
¥40.8608
|
|
|
¥39.2901
|
|
|
查看
|
|
|
¥26.0578
|
|
|
¥36.3973
|
|
|
¥34.578
|
|
|
¥32.8378
|
|
|
¥28.7811
|
|
|
¥26.0578
|
|
最低: 1
倍数: 1
:
2,500
|
|
Bridge Rectifiers
|
|
SMD/SMT
|
SOIC-16
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
NXP Semiconductors AFT27S006NT1
- AFT27S006NT1
- NXP Semiconductors
-
1:
¥191.0717
-
1,223库存量
-
寿命结束
|
Mouser 零件编号
841-AFT27S006NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
|
|
1,223库存量
|
|
|
¥191.0717
|
|
|
¥142.6964
|
|
|
¥132.4473
|
|
|
¥127.7578
|
|
|
查看
|
|
|
¥95.8805
|
|
|
¥123.4977
|
|
|
¥120.119
|
|
|
¥116.9889
|
|
|
¥95.8805
|
|
|
报价
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
PLD-1.5W
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
- A5G18H610W19NR3
- NXP Semiconductors
-
1:
¥2,182.0526
-
5库存量
-
寿命结束
|
Mouser 零件编号
771-A5G18H610W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
|
|
5库存量
|
|
|
¥2,182.0526
|
|
|
¥1,851.0982
|
|
|
¥1,759.9524
|
|
|
¥1,717.6791
|
|
|
查看
|
|
|
¥1,626.522
|
|
|
¥1,695.1808
|
|
|
¥1,626.522
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
OM-780-4S4S-8
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
- A5G19H605W19NR3
- NXP Semiconductors
-
1:
¥2,137.056
-
35库存量
-
寿命结束
|
Mouser 零件编号
771-A5G19H605W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
|
|
35库存量
|
|
|
¥2,137.056
|
|
|
¥1,812.8816
|
|
|
¥1,723.6342
|
|
|
¥1,682.2762
|
|
|
查看
|
|
|
¥1,624.2959
|
|
|
¥1,637.4491
|
|
|
¥1,624.2959
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101AN
- NXP Semiconductors
-
1:
¥386.0532
-
950库存量
-
2,000预期 2026/8/11
-
寿命结束
|
Mouser 零件编号
771-MRF101AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
950库存量
2,000预期 2026/8/11
|
|
|
¥386.0532
|
|
|
¥315.4395
|
|
|
¥307.4617
|
|
|
¥276.0138
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
- MRFX1K80NR5
- NXP Semiconductors
-
1:
¥3,067.0008
-
50库存量
-
寿命结束
|
Mouser 零件编号
771-MRFX1K80NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
|
|
50库存量
|
|
|
¥3,067.0008
|
|
|
¥2,647.1493
|
|
|
¥2,542.3305
|
|
|
¥2,479.1748
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
OM-1230-4
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
- AFM907NT1
- NXP Semiconductors
-
1:
¥56.8955
-
17,000库存量
-
寿命结束
|
Mouser 零件编号
841-AFM907NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
|
|
17,000库存量
|
|
|
¥56.8955
|
|
|
¥37.2561
|
|
|
¥31.6061
|
|
|
¥29.3574
|
|
|
¥23.278
|
|
|
查看
|
|
|
¥27.4477
|
|
|
¥25.7979
|
|
|
¥24.408
|
|
|
¥22.7582
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
DFN-16
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
- AFT05MP075NR1
- NXP Semiconductors
-
1:
¥395.7034
-
522库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MP075NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
|
|
522库存量
|
|
|
¥395.7034
|
|
|
¥321.9596
|
|
|
¥302.1507
|
|
|
¥298.0714
|
|
|
查看
|
|
|
¥267.9343
|
|
|
¥282.7034
|
|
|
¥279.6637
|
|
|
¥267.9343
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
TO-270-WB-4
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥46.9063
-
19,699库存量
-
11,000预期 2026/12/7
-
寿命结束
|
Mouser 零件编号
841-AFT05MS004NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
19,699库存量
11,000预期 2026/12/7
|
|
|
¥46.9063
|
|
|
¥30.5778
|
|
|
¥26.8375
|
|
|
¥25.3572
|
|
|
¥18.8484
|
|
|
查看
|
|
|
¥23.9673
|
|
|
¥21.7977
|
|
|
¥20.0688
|
|
|
¥18.4077
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
SOT-89-3
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
- AFT05MS031GNR1
- NXP Semiconductors
-
1:
¥260.5554
-
2,033库存量
-
2,000在途量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
|
|
2,033库存量
2,000在途量
|
|
|
¥260.5554
|
|
|
¥209.9201
|
|
|
¥196.281
|
|
|
¥193.3317
|
|
|
查看
|
|
|
¥172.7431
|
|
|
¥182.9131
|
|
|
¥177.2631
|
|
|
¥172.7431
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
TO-270-2
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
- MRF1K50HR5
- NXP Semiconductors
-
1:
¥3,558.0536
-
56库存量
-
100预期 2026/10/19
-
寿命结束
|
Mouser 零件编号
841-MRF1K50HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
|
|
56库存量
100预期 2026/10/19
|
|
|
¥3,558.0536
|
|
|
¥3,081.849
|
|
|
¥2,963.0295
|
|
|
¥2,891.2971
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
NI-1230H-4S
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
- MRF1K50NR5
- NXP Semiconductors
-
1:
¥3,106.6864
-
28库存量
-
寿命结束
|
Mouser 零件编号
841-MRF1K50NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
|
|
28库存量
|
|
|
¥3,106.6864
|
|
|
¥2,682.0663
|
|
|
¥2,576.0271
|
|
|
¥2,512.103
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
OM-1230-4
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
- MRFE6VP61K25HR5
- NXP Semiconductors
-
1:
¥3,601.2196
-
78库存量
-
100预期 2026/12/1
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP61K25HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
|
|
78库存量
100预期 2026/12/1
|
|
|
¥3,601.2196
|
|
|
¥3,253.6429
|
|
|
¥3,129.3542
|
|
|
¥3,054.3109
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
NI-1230H-4
|
|
|
|
桥式整流器 TEA2208T/1
- TEA2208T/1J
- NXP Semiconductors
-
1:
¥54.3417
-
1,167库存量
|
Mouser 零件编号
771-TEA2208T/1J
|
NXP Semiconductors
|
桥式整流器 TEA2208T/1
|
|
1,167库存量
|
|
|
¥54.3417
|
|
|
¥41.8552
|
|
|
¥37.3917
|
|
|
¥36.0696
|
|
|
查看
|
|
|
¥29.0297
|
|
|
¥33.5836
|
|
|
¥32.092
|
|
|
¥31.7643
|
|
|
¥29.0297
|
|
最低: 1
倍数: 1
:
2,500
|
|
Bridge Rectifiers
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
NXP Semiconductors MHT1803B
- MHT1803B
- NXP Semiconductors
-
1:
¥341.2374
-
277库存量
-
寿命结束
|
Mouser 零件编号
771-MHT1803B
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
|
|
277库存量
|
|
|
¥341.2374
|
|
|
¥276.8839
|
|
|
¥259.6853
|
|
|
¥255.1653
|
|
|
查看
|
|
|
¥240.8369
|
|
|
¥235.7067
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
- A5G07H800W19NR3
- NXP Semiconductors
-
1:
¥2,378.9099
-
65库存量
-
寿命结束
|
Mouser 零件编号
771-A5G07H800W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
|
|
65库存量
|
|
|
¥2,378.9099
|
|
|
¥2,018.1913
|
|
|
¥1,918.7626
|
|
|
¥1,872.6925
|
|
|
查看
|
|
|
¥1,808.1695
|
|
|
¥1,822.8143
|
|
|
¥1,808.1695
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
OM-780-4S4S-8
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
- MRFE6VP6300HR5
- NXP Semiconductors
-
1:
¥3,523.0462
-
48库存量
-
250预期 2026/12/14
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP6300HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
|
|
48库存量
250预期 2026/12/14
|
|
|
¥3,523.0462
|
|
|
¥3,050.9322
|
|
|
¥3,050.9322
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
NI-780-4
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
- A5G26H605W19NR3
- NXP Semiconductors
-
1:
¥2,244.4173
-
2库存量
-
寿命结束
|
Mouser 零件编号
771-A5G26H605W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
|
|
2库存量
|
|
|
¥2,244.4173
|
|
|
¥1,904.0387
|
|
|
¥1,810.3278
|
|
|
¥1,766.8115
|
|
|
¥1,719.747
|
|
|
¥1,706.0175
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
OM-780-4S4S-8
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101BN
- NXP Semiconductors
-
1:
¥348.2773
-
47库存量
-
500预期 2026/8/18
-
寿命结束
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Mouser 零件编号
771-MRF101BN
寿命结束
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NXP Semiconductors
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
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47库存量
500预期 2026/8/18
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¥348.2773
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¥282.8729
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¥276.1042
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¥256.4761
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查看
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¥248.5774
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¥238.6673
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报价
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最低: 1
倍数: 1
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否
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RF MOSFET Transistors
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Si
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Through Hole
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TO-220-3
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
- AFM906NT1
- NXP Semiconductors
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1:
¥32.2276
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49库存量
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1,000在途量
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寿命结束
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Mouser 零件编号
841-AFM906NT1
寿命结束
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NXP Semiconductors
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
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49库存量
1,000在途量
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¥32.2276
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¥24.2272
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¥22.2384
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¥20.0688
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查看
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¥17.7184
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¥19.0179
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¥18.3286
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¥17.7184
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最低: 1
倍数: 1
:
1,000
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RF MOSFET Transistors
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Si
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SMD/SMT
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HVSON-16
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
- AFT05MS031NR1
- NXP Semiconductors
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1:
¥209.8297
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10库存量
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3,000在途量
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寿命结束
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Mouser 零件编号
841-AFT05MS031NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
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10库存量
3,000在途量
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¥209.8297
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¥167.9745
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¥155.8157
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¥150.3465
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查看
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¥137.5775
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¥145.2954
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¥141.3178
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¥137.5775
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最低: 1
倍数: 1
:
500
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RF MOSFET Transistors
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Si
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SMD/SMT
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TO-270-2
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
- AFT09MS007NT1
- NXP Semiconductors
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1:
¥66.8734
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42库存量
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寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
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42库存量
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¥66.8734
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¥51.2455
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¥44.2056
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¥41.0755
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查看
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¥32.2276
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¥38.3861
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¥36.1261
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¥34.1373
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¥32.2276
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最低: 1
倍数: 1
:
1,000
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RF MOSFET Transistors
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Si
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SMD/SMT
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PLD-1.5
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
- AFT09MS031NR1
- NXP Semiconductors
-
1:
¥169.8842
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11库存量
-
寿命结束
|
Mouser 零件编号
841-AFT09MS031NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
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11库存量
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¥169.8842
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¥135.4079
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¥126.899
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¥126.7973
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查看
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¥123.1587
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¥123.2378
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¥123.1587
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¥123.1587
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最低: 1
倍数: 1
:
500
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RF MOSFET Transistors
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Si
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SMD/SMT
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TO-270-2
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
- MRF6V10010NR4
- NXP Semiconductors
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1:
¥1,542.0545
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1库存量
-
寿命结束
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Mouser 零件编号
841-MRF6V10010NR4
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
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1库存量
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¥1,542.0545
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¥1,308.0767
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¥1,246.503
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¥1,229.9146
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¥1,143.8312
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查看
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报价
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最低: 1
倍数: 1
:
100
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RF MOSFET Transistors
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Si
|
Screw Mount
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PLD-1.5
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