|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
- MRFE6S9060NR1
- NXP Semiconductors
-
1:
¥853.3986
-
1,500预期 2026/12/7
-
寿命结束
|
Mouser 零件编号
841-MRFE6S9060NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
|
|
1,500预期 2026/12/7
|
|
|
¥853.3986
|
|
|
¥711.4819
|
|
|
¥695.9444
|
|
|
¥659.5471
|
|
|
¥633.5797
|
|
|
¥606.8326
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
TO-270
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
- A5G21H605W19NR3
- NXP Semiconductors
-
1:
¥2,138.0391
-
208预期 2026/8/13
-
寿命结束
|
Mouser 零件编号
771-A5G21H605W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
|
|
208预期 2026/8/13
|
|
|
¥2,138.0391
|
|
|
¥1,813.7969
|
|
|
¥1,724.5495
|
|
|
¥1,683.1011
|
|
|
¥1,661.439
|
|
|
¥1,625.1999
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
OM-780-4S4S-8
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
- MRFX1K80HR5
- NXP Semiconductors
-
1:
¥3,660.1943
-
750预期 2026/12/21
-
寿命结束
|
Mouser 零件编号
771-MRFX1K80HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
|
|
750预期 2026/12/21
|
|
|
¥3,660.1943
|
|
|
¥3,160.6213
|
|
|
¥3,160.6213
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
NI-1230H-4
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
NXP Semiconductors AFV09P350-04NR3
- AFV09P350-04NR3
- NXP Semiconductors
-
1:
¥1,351.4913
-
248预期 2026/10/26
-
寿命结束
|
Mouser 零件编号
841-AFV09P350-04NR3
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
|
|
248预期 2026/10/26
|
|
|
¥1,351.4913
|
|
|
¥1,146.5319
|
|
|
¥1,090.111
|
|
|
¥1,063.895
|
|
|
¥980.6818
|
|
|
¥980.6818
|
|
最低: 1
倍数: 1
:
250
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
OM-780-4
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
- MHT1803A
- NXP Semiconductors
-
1:
¥339.4181
-
237预期 2026/8/20
-
寿命结束
|
Mouser 零件编号
771-MHT1803A
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
|
|
237预期 2026/8/20
|
|
|
¥339.4181
|
|
|
¥276.1946
|
|
|
¥257.7756
|
|
|
¥253.6059
|
|
|
¥241.2776
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300BN
- NXP Semiconductors
-
1:
¥785.1466
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
771-MRF300BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
无库存交货期 53 周
|
|
|
¥785.1466
|
|
|
¥653.9988
|
|
|
¥597.9734
|
|
|
¥581.385
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
- MRF1518NT1
- NXP Semiconductors
-
1:
¥128.707
-
990在途量
-
寿命结束
|
Mouser 零件编号
841-MRF1518NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
|
|
990在途量
|
|
|
¥128.707
|
|
|
¥84.3319
|
|
|
¥71.5742
|
|
|
¥66.5231
|
|
|
查看
|
|
|
¥49.8556
|
|
|
¥62.1048
|
|
|
¥58.7035
|
|
|
¥49.8556
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
PLD-1.5
|
|
|
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
- A5G08H800W19NR3
- NXP Semiconductors
-
1:
¥2,497.9554
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
771-A5G08H800W19NR3
寿命结束
|
NXP Semiconductors
|
GaN 场效应晶体管 Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
|
|
无库存交货期 53 周
|
|
|
¥2,497.9554
|
|
|
¥2,119.1003
|
|
|
¥2,014.7787
|
|
|
¥1,966.3243
|
|
|
¥1,932.4582
|
|
|
¥1,836.6568
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
OM-780-4S4S-8
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥765.1569
-
交货期 53 周
-
寿命结束
|
Mouser 零件编号
771-MRF300AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
交货期 53 周
|
|
|
¥765.1569
|
|
|
¥637.659
|
|
|
¥600.4029
|
|
|
¥567.147
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
- A2T08VD020NT1
- NXP Semiconductors
-
1:
¥238.317
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-A2T08VD020NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
|
|
无库存交货期 53 周
|
|
|
¥238.317
|
|
|
¥156.1547
|
|
|
¥132.4473
|
|
|
¥123.0683
|
|
|
查看
|
|
|
¥90.3322
|
|
|
¥115.0001
|
|
|
¥108.2201
|
|
|
¥98.7507
|
|
|
¥90.3322
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
PQFN-24
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
- AFT09MS031GNR1
- NXP Semiconductors
-
1:
¥286.5228
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-AFT09MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
|
|
无库存交货期 53 周
|
|
|
¥286.5228
|
|
|
¥230.2375
|
|
|
¥214.8808
|
|
|
¥210.7902
|
|
|
查看
|
|
|
¥193.2413
|
|
|
¥200.2021
|
|
|
¥193.9419
|
|
|
¥193.2413
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
TO-270-2
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
- MRF6V12250HR5
- NXP Semiconductors
-
1:
¥5,762.2429
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12250HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
|
|
无库存交货期 53 周
|
|
|
¥5,762.2429
|
|
|
¥5,611.9529
|
|
|
¥5,611.9529
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
NI-780
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
- MRF6V12500HR5
- NXP Semiconductors
-
1:
¥7,823.8601
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12500HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
|
|
无库存交货期 53 周
|
|
|
¥7,823.8601
|
|
|
¥7,480.0124
|
|
|
¥7,480.0124
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
NI-780H-2
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
- MRFE6VP5600HR5
- NXP Semiconductors
-
1:
¥3,738.6276
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP5600HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
|
|
无库存交货期 53 周
|
|
|
¥3,738.6276
|
|
|
¥3,246.5239
|
|
|
¥3,246.5239
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
NI-1230
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
- MRFE6VP5600HR6
- NXP Semiconductors
-
1:
¥2,822.9434
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP5600HR6
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
|
|
无库存交货期 53 周
|
|
|
¥2,822.9434
|
|
|
¥2,433.0595
|
|
|
¥2,288.024
|
|
|
¥2,245.0388
|
|
|
¥2,133.9485
|
|
|
¥2,133.9485
|
|
最低: 1
倍数: 1
:
150
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
NI-1230
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
NXP Semiconductors MRF6VP121KHR5
- MRF6VP121KHR5
- NXP Semiconductors
-
1:
¥7,984.1619
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6VP121KHR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
|
|
无库存交货期 53 周
|
|
|
¥7,984.1619
|
|
|
¥7,984.1619
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
NI-1230-4
|
|