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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
- MRF6V10010NR4
- NXP Semiconductors
-
1:
¥1,583.3108
-
1库存量
-
寿命结束
|
Mouser 零件编号
841-MRF6V10010NR4
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
|
|
1库存量
|
|
|
¥1,583.3108
|
|
|
¥1,343.0728
|
|
|
¥1,279.8493
|
|
|
¥1,263.1705
|
|
|
¥1,136.4523
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
:
100
|
|
|
N-Channel
|
Si
|
100 V
|
960 MHz to 1.4 GHz
|
25 dB
|
10 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
- MRF6V12250HR5
- NXP Semiconductors
-
1:
¥5,762.2429
-
无库存交货期 15 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12250HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
|
|
无库存交货期 15 周
|
|
|
¥5,762.2429
|
|
|
¥5,710.794
|
|
|
¥5,617.7385
|
|
|
¥5,276.2073
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
100 V
|
960 MHz to 1.215 GHz
|
20.3 dB
|
275 W
|
|
+ 150 C
|
Screw Mount
|
NI-780
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
- MRF6V12500HR5
- NXP Semiconductors
-
1:
¥8,861.9459
-
无库存交货期 15 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12500HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
|
|
无库存交货期 15 周
|
|
|
¥8,861.9459
|
|
|
¥7,827.9168
|
|
|
¥7,827.9168
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
110 V
|
1.215 MHz to 960 MHz
|
19.7 dB
|
500 W
|
|
+ 150 C
|
Screw Mount
|
NI-780H-2
|
Reel, Cut Tape, MouseReel
|
|
