|
|
IGBT 模块 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
¥315.722
-
28库存量
|
Mouser 零件编号
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
IGBT 模块 650 V, 100 A booster IGBT module
|
|
28库存量
|
|
|
¥315.722
|
|
|
¥235.1643
|
|
|
¥196.3714
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 MASS MARKET 250KW 1500V Q2 PACK INPC-400A
- NXH400N100H4Q2F2PG
- onsemi
-
1:
¥1,905.7789
-
35库存量
|
Mouser 零件编号
863-H400N100H4Q2F2PG
|
onsemi
|
IGBT 模块 MASS MARKET 250KW 1500V Q2 PACK INPC-400A
|
|
35库存量
|
|
最低： 1
倍数： 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
1 kV
|
1.77 V
|
360 A, 409 A
|
2 uA
|
805 W, 959 W
|
|
- 40 C
|
+ 150 C
|
|
SiC
|
Tray
|
|
|
|
IGBT 模块 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB53BPSA2
- Infineon Technologies
-
1:
¥281.7316
-
30库存量
|
Mouser 零件编号
726-DFW1H5FPB53BPSA2
|
Infineon Technologies
|
IGBT 模块 650 V, 100 A booster IGBT module
|
|
30库存量
|
|
|
¥281.7316
|
|
|
¥237.4808
|
|
|
¥196.3714
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 HybridPACK Drive G2 CoolSiC: Compact 750 V/500 A B6-bridge power module optimized for inverter various power classes
- FS02MR08A7MA2BHPSA1
- Infineon Technologies
-
1:
¥6,307.5922
-
3库存量
-
新产品
|
Mouser 零件编号
726-FS02MR08A7MA2BHP
新产品
|
Infineon Technologies
|
IGBT 模块 HybridPACK Drive G2 CoolSiC: Compact 750 V/500 A B6-bridge power module optimized for inverter various power classes
|
|
3库存量
|
|
|
¥6,307.5922
|
|
|
¥4,975.1188
|
|
最低： 1
倍数： 1
|
|
|
IGBT Module
|
|
|
|
|
|
2.65 MW
|
|
- 40 C
|
+ 175 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 HybridPACK Drive G2 CoolSiC: Compact 1200 V/300 A B6-bridge power module optimized for inverter various power classes
- FS03M1R12A7MA2BHPSA1
- Infineon Technologies
-
1:
¥4,300.4071
-
4库存量
-
6预期 2027/2/11
-
新产品
|
Mouser 零件编号
726-FS03M1R12A7MA2BH
新产品
|
Infineon Technologies
|
IGBT 模块 HybridPACK Drive G2 CoolSiC: Compact 1200 V/300 A B6-bridge power module optimized for inverter various power classes
|
|
4库存量
6预期 2027/2/11
|
|
最低： 1
倍数： 1
|
|
|
IGBT Module
|
|
|
|
|
|
2.65 MW
|
|
- 40 C
|
+ 185 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 PM-IGBT-TFS-SOT227
Microchip Technology APT100GT120JU3
- APT100GT120JU3
- Microchip Technology
-
1:
¥284.7939
-
23库存量
|
Mouser 零件编号
494-APT100GT120JU3
|
Microchip Technology
|
IGBT 模块 PM-IGBT-TFS-SOT227
|
|
23库存量
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Single
|
1.2 kV
|
1.7 V
|
140 A
|
400 nA
|
480 W
|
ISOTOP-4
|
- 55 C
|
+ 150 C
|
SMD/SMT
|
SiC
|
Tube
|
|
|
|
IGBT 模块 EasyPACK 1B module with Trench/Fieldstop IGBT H5 and CoolSiC Schottky diode and NTC
- DF300R07W1H5FB20BPSA1
- Infineon Technologies
-
1:
¥589.0238
-
24库存量
-
新产品
|
Mouser 零件编号
726-DF300R07W1H5FB20
新产品
|
Infineon Technologies
|
IGBT 模块 EasyPACK 1B module with Trench/Fieldstop IGBT H5 and CoolSiC Schottky diode and NTC
|
|
24库存量
|
|
|
¥589.0238
|
|
|
¥511.6866
|
|
|
¥422.1002
|
|
最低： 1
倍数： 1
|
|
|
IGBT Module
|
|
650 V
|
1.18 V
|
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 EasyPACK HD3 module with TRENCHSTOP H7 and CoolSiC Schottky diode and NTC
- FC560R12D3H7FB78BPSA1
- Infineon Technologies
-
1:
¥2,204.7091
-
6库存量
-
新产品
|
Mouser 零件编号
726-FC560R12D3H7FB78
新产品
|
Infineon Technologies
|
IGBT 模块 EasyPACK HD3 module with TRENCHSTOP H7 and CoolSiC Schottky diode and NTC
|
|
6库存量
|
|
|
¥2,204.7091
|
|
|
¥1,601.1309
|
|
最低： 1
倍数： 1
|
|
|
IGBT Modules
|
Module
|
1.2 kV
|
1.22 V
|
195 A
|
100 nA
|
20 mW
|
|
- 40 C
|
+ 175 C
|
Screw Mount
|
SiC
|
Tray
|
|
|
|
IGBT 模块 EconoPACK3 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC
- F3L400R10N3S7FC1BPSA1
- Infineon Technologies
-
1:
¥1,780.2924
-
20库存量
-
新产品
|
Mouser 零件编号
726-F3L400R10N3S7FC1
新产品
|
Infineon Technologies
|
IGBT 模块 EconoPACK3 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC
|
|
20库存量
|
|
最低： 1
倍数： 1
|
|
|
Modules
|
|
950 V
|
1.46 V
|
105 A
|
100 nA
|
|
EconoPACK
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 EconoPACK 3 module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and NTC
- F3L500R12N3H7FB66BPSA1
- Infineon Technologies
-
1:
¥2,447.8964
-
20库存量
-
新产品
|
Mouser 零件编号
726-F3L500R12N3H7FB6
新产品
|
Infineon Technologies
|
IGBT 模块 EconoPACK 3 module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and NTC
|
|
20库存量
|
|
最低： 1
倍数： 1
|
|
|
IGBT Module
|
|
1.2 kV
|
1.69 V
|
255 A
|
100 nA
|
20 mW
|
|
- 40 C
|
+ 175 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 11705 GEN-III 1100V Q2PACK
- SNXH100M65L4Q2F2P2G-N1
- onsemi
-
1:
¥912.7688
-
33库存量
-
新产品
|
Mouser 零件编号
863-00M65L4Q2F2P2GN1
新产品
|
onsemi
|
IGBT 模块 11705 GEN-III 1100V Q2PACK
|
|
33库存量
|
|
最低： 1
倍数： 1
最大： 3
|
|
|
IGBT Modules
|
Single
|
650 V
|
1.56 V
|
113 A
|
600 nA
|
226 W
|
Q2PACK
|
|
+ 175 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HZ
- STMicroelectronics
-
1:
¥72.6251
-
79库存量
|
Mouser 零件编号
511-STGIPQ5C60T-HZ
|
STMicroelectronics
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
79库存量
|
|
|
¥72.6251
|
|
|
¥50.7031
|
|
|
¥43.7536
|
|
|
¥40.5331
|
|
|
¥37.2222
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.7 V
|
5 A
|
|
13.6 W
|
N2DIP-26
|
- 40 C
|
+ 125 C
|
Through Hole
|
SiC
|
Tube
|
|
|
|
IGBT 模块 1200 V, 160 A booster IGBT module
- DF160R12W2H3F_B11
- Infineon Technologies
-
1:
¥749.4047
-
10库存量
|
Mouser 零件编号
641-DF160R12W2H3FB11
|
Infineon Technologies
|
IGBT 模块 1200 V, 160 A booster IGBT module
|
|
10库存量
|
|
|
¥749.4047
|
|
|
¥635.0939
|
|
|
¥635.0148
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Quad
|
1.2 kV
|
1.55 V
|
20 A
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 650 V, 50 A 3-level IGBT module
- FS3L50R07W2H3FB11BPSA1
- Infineon Technologies
-
1:
¥515.3252
-
12库存量
|
Mouser 零件编号
726-FS3L50R07W2H3FB1
|
Infineon Technologies
|
IGBT 模块 650 V, 50 A 3-level IGBT module
|
|
12库存量
|
|
|
¥515.3252
|
|
|
¥427.0609
|
|
|
¥369.3292
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.45 V
|
50 A
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 650 V, 80 A booster IGBT module
- DF80R07W1H5FPB11BPSA1
- Infineon Technologies
-
1:
¥285.4493
-
25库存量
|
Mouser 零件编号
726-DF80R07W1H5FPB11
|
Infineon Technologies
|
IGBT 模块 650 V, 80 A booster IGBT module
|
|
25库存量
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.4 V
|
20 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Screw Mount
|
SiC
|
Tray
|
|
|
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
- STGIPQ3H60T-HL
- STMicroelectronics
-
1:
¥68.0712
-
6库存量
|
Mouser 零件编号
511-STGIPQ3H60T-HL
|
STMicroelectronics
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
|
|
6库存量
|
|
|
¥68.0712
|
|
|
¥46.4882
|
|
|
¥38.2166
|
|
|
¥34.0808
|
|
|
查看
|
|
|
¥31.6852
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
2.15 V
|
3 A
|
|
12 W
|
N2DIP-26
|
- 40 C
|
+ 125 C
|
Through Hole
|
SiC
|
Tube
|
|
|
|
IGBT 模块 IGBT NPT Medium Frequency Combi 1200 V 100 A SOT-227
- APT100GT120JRDQ4
- Microchip Technology
-
1:
¥511.3476
-
2预期 2026/10/26
|
Mouser 零件编号
494-APT100GT120JRDQ4
|
Microchip Technology
|
IGBT 模块 IGBT NPT Medium Frequency Combi 1200 V 100 A SOT-227
|
|
2预期 2026/10/26
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Single
|
1.2 kV
|
3.2 V
|
123 A
|
600 nA
|
570 W
|
ISOTOP-4
|
- 55 C
|
+ 150 C
|
SMD/SMT
|
SiC
|
Tube
|
|
|
|
IGBT 模块 PIM 60-80KW Q0BOOST-L57 1200V 100A (PRESS-FIT PIN TIM)
- NXH100B120H3Q0PTG
- onsemi
-
24:
¥563.7118
-
144工厂有库存
|
Mouser 零件编号
863-NXH100B120H3Q0PG
|
onsemi
|
IGBT 模块 PIM 60-80KW Q0BOOST-L57 1200V 100A (PRESS-FIT PIN TIM)
|
|
144工厂有库存
|
|
|
¥563.7118
|
|
|
¥455.4352
|
|
|
查看
|
|
|
报价
|
|
最低： 24
倍数： 24
|
|
|
SiC IGBT Modules
|
Dual
|
1.2 kV
|
1.77 V
|
50 A
|
800 nA
|
186 W
|
Q0BOOST
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 PIM 60-80KW Q0BOOST-L57 1200V 100A (SOLDER PIN TIM)
- NXH100B120H3Q0STG
- onsemi
-
24:
¥451.0508
-
96工厂有库存
|
Mouser 零件编号
863-NXH100B120H3Q0SG
|
onsemi
|
IGBT 模块 PIM 60-80KW Q0BOOST-L57 1200V 100A (SOLDER PIN TIM)
|
|
96工厂有库存
|
|
最低： 24
倍数： 24
|
|
|
SiC IGBT Modules
|
Dual
|
1.2 kV
|
1.77 V
|
50 A
|
800 nA
|
186 W
|
Q0BOOST
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 IGBT NPT Low Frequency Combi 1200 V 60 A SOT-227
- APT60GF120JRDQ3
- Microchip Technology
-
10:
¥935.0185
-
无库存交货期 26 周
|
Mouser 零件编号
494-APT60GF120JRDQ3
|
Microchip Technology
|
IGBT 模块 IGBT NPT Low Frequency Combi 1200 V 60 A SOT-227
|
|
无库存交货期 26 周
|
|
最低： 10
倍数： 1
|
|
|
SiC IGBT Modules
|
Single
|
1.2 kV
|
2.5 V
|
149 A
|
100 nA
|
625 W
|
ISOTOP-4
|
- 55 C
|
+ 150 C
|
SMD/SMT
|
SiC
|
Tube
|
|
|
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
- STGIPQ3H60T-HZ
- STMicroelectronics
-
1:
¥64.6021
-
无库存交货期 22 周
|
Mouser 零件编号
511-STGIPQ3H60T-HZ
|
STMicroelectronics
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
|
|
无库存交货期 22 周
|
|
|
¥64.6021
|
|
|
¥46.1605
|
|
|
¥37.3013
|
|
|
¥36.4764
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Half Bridge
|
600 V
|
2.15 V
|
3 A
|
|
|
N2DIP-26
|
|
+ 175 C
|
Through Hole
|
SiC
|
Tube
|
|
|
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HL
- STMicroelectronics
-
360:
¥40.8608
-
无库存交货期 22 周
|
Mouser 零件编号
511-STGIPQ5C60T-HL
|
STMicroelectronics
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
无库存交货期 22 周
|
|
|
¥40.8608
|
|
|
¥38.5443
|
|
|
¥38.4652
|
|
最低： 360
倍数： 360
|
|
|
SiC IGBT Modules
|
Half Bridge
|
600 V
|
2.15 V
|
5 A
|
|
|
N2DIP-26
|
|
+ 175 C
|
Through Hole
|
SiC
|
Tube
|
|
|
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HZS
- STMicroelectronics
-
1:
¥95.0443
-
无库存交货期 22 周
|
Mouser 零件编号
511-STGIPQ5C60T-HZS
|
STMicroelectronics
|
IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
无库存交货期 22 周
|
|
|
¥95.0443
|
|
|
¥67.1672
|
|
|
¥50.2059
|
|
|
¥49.8782
|
|
|
¥46.5673
|
|
最低： 1
倍数： 1
|
|
|
SiC IGBT Modules
|
Half Bridge
|
600 V
|
2.15 V
|
5 A
|
|
13.6 W
|
N2DIP-26
|
- 40 C
|
+ 125 C
|
Through Hole
|
SiC
|
Tube
|
|
|
|
IGBT 模块 1200 V, 80 A booster IGBT module
- DF80R12W2H3F_B11
- Infineon Technologies
-
15:
¥410.9358
-
无库存交货期 18 周
|
Mouser 零件编号
641-DF80R12W2H3F_B11
|
Infineon Technologies
|
IGBT 模块 1200 V, 80 A booster IGBT module
|
|
无库存交货期 18 周
|
|
最低： 15
倍数： 15
|
|
|
SiC IGBT Modules
|
Dual
|
1.2 kV
|
1.55 V
|
20 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Press Fit
|
SiC
|
Tray
|
|
|
|
IGBT 模块 GEN III Q2BOOST 1100V
- SNXH150B120H3Q2F2PG-N
- onsemi
-
1:
¥693.5714
-
无库存交货期 18 周
-
新产品
|
Mouser 零件编号
863-150B120H3Q2F2PGN
新产品
|
onsemi
|
IGBT 模块 GEN III Q2BOOST 1100V
|
|
无库存交货期 18 周
|
|
最低： 1
倍数： 1
|
|
|
IGBT Modules
|
Single
|
1.2 kV
|
2.2 V
|
80 A
|
800 nA
|
279 W
|
Q2BOOST
|
|
+ 175 C
|
Press Fit
|
SiC
|
Tray
|
|
