非车载充电器子单元电源转换器

Littelfuse非车载充电器子单元电源转换器用于能够在30分钟内将SOC充电至80%的直流充电站。这些快速充电应用需要模块化电源转换器,可以并联满足不同功率的需求,从而实现快速充电。最关键的参数是能量密度和系统效率。直流充电站中的子单元电源转换器由集成在充电站中的交流/直流电源级和直流/直流电源级组成。

结果: 122
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
IXYS MOSFET 1000V 52A PLUS247 Power MOSFET 94库存量
最低: 1
倍数: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms - 30 V, 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-264 Power MOSFET 131库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET TO247 650V 80A N-CH X2CLASS 239库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 137 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 287库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 314库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 729库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/34A Ultra Junction X2 639库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/46A Ultra Junction X2 350库存量
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 76 mOhms - 30 V, 30 V 2.7 V 75 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFET TO247 650V 62A N-CH X2CLASS 194库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 62 A 50 mOhms - 30 V, 30 V 2.7 V 100 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFET PLUS247 650V 120A N-CH X2CLASS 213库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms - 30 V, 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-247 Power MOSFET 468库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET 650V/64A Power MOSFET 3库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 51 mOhms - 30 V, 30 V 3 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 238库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET TO3P 850V 8A N-CH XCLASS 251库存量
最低: 1
倍数: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 850 V 8 A 850 mOhms - 30 V, 30 V 3 V 17 nC 200 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 170库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET TO247 650V 12A N-CH X2CLASS 280库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 12 A 300 mOhms - 30 V, 30 V 2.5 V 17.7 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-268HV Power MOSFET 256库存量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET 650V/9A Power MOSFET 263库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 210 mOhms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFET TO264 650V 120A N-CH X2CLASS 407库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms - 30 V, 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET TO220 650V 34A N-CH X2CLASS 190库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 231库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/60A Ultra Junction X2 719库存量
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 2.7 V 107 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/80A Ultra Junction X2 308库存量
300预期 2026/11/16
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 40 mOhms - 30 V, 30 V 2.7 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 357库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET 650V/80A TO-268HV 201库存量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube