|
|
IGBT 模块 EasyPACK module with TRENCHSTOP IGBT7/4 and emitter controlled 7 diode and NTC
- FZ35R12ST4H18ABPSA1
- Infineon Technologies
-
1:
¥274.1154
-
54库存量
-
新产品
|
Mouser 零件编号
726-FZ35R12ST4H18ABP
新产品
|
Infineon Technologies
|
IGBT 模块 EasyPACK module with TRENCHSTOP IGBT7/4 and emitter controlled 7 diode and NTC
|
|
54库存量
|
|
|
¥274.1154
|
|
|
¥223.7513
|
|
|
¥197.6031
|
|
|
¥181.478
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Press Fit
|
|
|
|
|
|
MOSFET N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
¥25.4815
-
20,317库存量
|
Mouser 零件编号
689-DN2625DK6-G
|
Microchip Technology
|
MOSFET N-CHANNEL DEPLETION MODE
|
|
20,317库存量
|
|
|
¥25.4815
|
|
|
¥23.0746
|
|
|
¥21.2553
|
|
|
¥20.3513
|
|
|
查看
|
|
|
¥20.2609
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DFN-8
|
N-Channel
|
|
|
|
IGBT 模块 IGBT 1700V 3600A
- FZ3600R17HP4
- Infineon Technologies
-
1:
¥11,204.8766
-
25库存量
-
30预期 2026/9/28
|
Mouser 零件编号
641-FZ3600R17HP4
|
Infineon Technologies
|
IGBT 模块 IGBT 1700V 3600A
|
|
25库存量
30预期 2026/9/28
|
|
|
¥11,204.8766
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
绝缘栅双极晶体管(IGBT) 1700 V, 2000 A dual IGBT module
- FF2000XTR17IE5BPSA1
- Infineon Technologies
-
1:
¥9,186.9339
-
20库存量
|
Mouser 零件编号
726-FF2000XTR17IE5BP
|
Infineon Technologies
|
绝缘栅双极晶体管(IGBT) 1700 V, 2000 A dual IGBT module
|
|
20库存量
|
|
|
¥9,186.9339
|
|
|
¥9,048.9609
|
|
最低: 1
倍数: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT
- CGHV40180F
- MACOM
-
1:
¥4,452.20
-
307库存量
|
Mouser 零件编号
941-CGHV40180F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT
|
|
307库存量
|
|
|
¥4,452.20
|
|
|
¥3,885.1434
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
Screw Mount
|
440223
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
- MRF151A
- MACOM
-
1:
¥2,903.9983
-
260库存量
|
Mouser 零件编号
937-MRF151A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
|
|
260库存量
|
|
|
¥2,903.9983
|
|
|
¥2,434.4155
|
|
|
¥2,403.4761
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
Screw Mount
|
244-4
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 100Watts 28Volt Gain 12dB
- MRF177
- MACOM
-
1:
¥2,593.1466
-
340库存量
|
Mouser 零件编号
937-MRF177
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 100Watts 28Volt Gain 12dB
|
|
340库存量
|
|
|
¥2,593.1466
|
|
|
¥2,189.7366
|
|
|
¥2,063.6851
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
744A-01
|
N-Channel
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-4.0GHz, 45 Watt
- CG2H40045F
- MACOM
-
1:
¥3,865.8656
-
671库存量
|
Mouser 零件编号
941-CG2H40045F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-4.0GHz, 45 Watt
|
|
671库存量
|
|
|
¥3,865.8656
|
|
|
¥3,262.6716
|
|
|
¥3,244.6142
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
Screw Mount
|
440193
|
N-Channel
|
|
|
|
MOSFET模块 SiC, Module, 21mohm, 1200V, 33.8 mm, FM3, Six-Pack, Industrial, Gen 3, Pre-Applied TIM
- CCB021M12FM3T
- Wolfspeed
-
1:
¥1,377.5604
-
25库存量
|
Mouser 零件编号
941-CCB021M12FM3T
|
Wolfspeed
|
MOSFET模块 SiC, Module, 21mohm, 1200V, 33.8 mm, FM3, Six-Pack, Industrial, Gen 3, Pre-Applied TIM
|
|
25库存量
|
|
|
¥1,377.5604
|
|
|
¥1,308.9468
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
47.62 mm x 33.5 mm
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 15Watts 28Volt Gain 16dB
- MRF136
- MACOM
-
1:
¥828.2335
-
465库存量
|
Mouser 零件编号
937-MRF136
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 15Watts 28Volt Gain 16dB
|
|
465库存量
|
|
|
¥828.2335
|
|
|
¥647.4222
|
|
|
¥627.489
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
211-07-3
|
N-Channel
|
|
|
|
绝缘栅双极晶体管(IGBT) 1700 V, 1700 A dual IGBT module
- FF1700XTR17IE5DBPSA1
- Infineon Technologies
-
1:
¥8,753.0026
-
24库存量
|
Mouser 零件编号
726-FF1700XTR17IE5DB
|
Infineon Technologies
|
绝缘栅双极晶体管(IGBT) 1700 V, 1700 A dual IGBT module
|
|
24库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
MOSFET模块 SiC, Module, 32mohm, 1200V, 33.8 mm, FM3, Six-Pack, Industrial, Gen 3, Pre-Applied TIM
- CCB032M12FM3T
- Wolfspeed
-
1:
¥1,052.0639
-
41库存量
|
Mouser 零件编号
941-CCB032M12FM3T
|
Wolfspeed
|
MOSFET模块 SiC, Module, 32mohm, 1200V, 33.8 mm, FM3, Six-Pack, Industrial, Gen 3, Pre-Applied TIM
|
|
41库存量
|
|
|
¥1,052.0639
|
|
|
¥970.1728
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 2Watts 28Volt Gain 16dB
- MRF158
- MACOM
-
1:
¥827.4877
-
524库存量
|
Mouser 零件编号
937-MRF158
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 2Watts 28Volt Gain 16dB
|
|
524库存量
|
|
|
¥827.4877
|
|
|
¥691.7521
|
|
|
¥671.3217
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
305A-01
|
N-Channel
|
|
|
|
IGBT 模块 IGBT Module 200A 1700V
- FF200R17KE4
- Infineon Technologies
-
1:
¥1,446.7051
-
16库存量
|
Mouser 零件编号
641-FF200R17KE4
|
Infineon Technologies
|
IGBT 模块 IGBT Module 200A 1700V
|
|
16库存量
|
|
|
¥1,446.7051
|
|
|
¥1,029.5656
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
62 mm
|
|
|
|
|
IGBT 模块 MEDIUM POWER 62MM
Infineon Technologies FF450R12KE7EHPSA1
- FF450R12KE7EHPSA1
- Infineon Technologies
-
1:
¥1,549.1057
-
11库存量
|
Mouser 零件编号
726-FF450R12KE7EHPSA
|
Infineon Technologies
|
IGBT 模块 MEDIUM POWER 62MM
|
|
11库存量
|
|
|
¥1,549.1057
|
|
|
¥1,237.9263
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
MOSFET Nch Power MOSFET 60V 100A 4.6mohm TO-220
- N0602N-S19-AY
- Renesas Electronics
-
1:
¥29.1992
-
1,363库存量
|
Mouser 零件编号
968-N0602N-S19-AY
|
Renesas Electronics
|
MOSFET Nch Power MOSFET 60V 100A 4.6mohm TO-220
|
|
1,363库存量
|
|
|
¥29.1992
|
|
|
¥14.7239
|
|
|
¥13.3227
|
|
|
¥10.8367
|
|
|
查看
|
|
|
¥10.2604
|
|
|
¥9.8423
|
|
|
¥9.266
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBT 模块 N-CH 1.7KV 620A
Infineon Technologies FZ400R17KE3
- FZ400R17KE3
- Infineon Technologies
-
1:
¥1,434.6254
-
112库存量
|
Mouser 零件编号
641-FZ400R17KE3
|
Infineon Technologies
|
IGBT 模块 N-CH 1.7KV 620A
|
|
112库存量
|
|
|
¥1,434.6254
|
|
|
¥1,225.0217
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
62 mm
|
|
|
|
|
IGBT 模块 950 V 400 A EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode
- FS3L400R10W3S7FB11BPSA1
- Infineon Technologies
-
1:
¥1,323.456
-
23库存量
|
Mouser 零件编号
726-3L400R10W3S7FB11
|
Infineon Technologies
|
IGBT 模块 950 V 400 A EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode
|
|
23库存量
|
|
|
¥1,323.456
|
|
|
¥1,225.937
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
|
|
|
|
|
IGBT 模块 1200 V, 600 A common emitter IGBT module
- FF600R12KE7EHPSA1
- Infineon Technologies
-
1:
¥1,471.9267
-
26库存量
|
Mouser 零件编号
726-FF600R12KE7EHPSA
|
Infineon Technologies
|
IGBT 模块 1200 V, 600 A common emitter IGBT module
|
|
26库存量
|
|
|
¥1,471.9267
|
|
|
¥1,246.7742
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
|
|
|
|
|
IGBT 模块 IGBT Module 50A 600V
- FS50R06W1E3_B11
- Infineon Technologies
-
1:
¥265.2675
-
239库存量
|
Mouser 零件编号
641-FS50R06W1E3_B11
|
Infineon Technologies
|
IGBT 模块 IGBT Module 50A 600V
|
|
239库存量
|
|
|
¥265.2675
|
|
|
¥188.9247
|
|
|
¥188.8456
|
|
|
¥170.3927
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
SMD/SMT
|
Module
|
|
|
|
|
IGBT 模块 1200 V, 600 A dual IGBT module
- FF600R12KE4PBOSA1
- Infineon Technologies
-
1:
¥1,705.3508
-
61库存量
|
Mouser 零件编号
726-FF600R12KE4PBOSA
|
Infineon Technologies
|
IGBT 模块 1200 V, 600 A dual IGBT module
|
|
61库存量
|
|
|
¥1,705.3508
|
|
|
¥1,394.3409
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
IGBT 模块 1200 V, 100 A sixpack IGBT module
- FS100R12W2T7BOMA1
- Infineon Technologies
-
1:
¥580.1646
-
146库存量
|
Mouser 零件编号
726-FS100R12W2T7BOMA
|
Infineon Technologies
|
IGBT 模块 1200 V, 100 A sixpack IGBT module
|
|
146库存量
|
|
|
¥580.1646
|
|
|
¥476.9391
|
|
|
¥436.6546
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
|
|
|
|
|
MOSFET POWER TRS1 HV-MOS TO220FP MOS AP5H POWER
- RJK6006DPP-A0#T2
- Renesas Electronics
-
1:
¥33.0073
-
775库存量
|
Mouser 零件编号
968-RJK6006DPP-A0#T2
|
Renesas Electronics
|
MOSFET POWER TRS1 HV-MOS TO220FP MOS AP5H POWER
|
|
775库存量
|
|
|
¥33.0073
|
|
|
¥20.7581
|
|
|
¥18.6111
|
|
|
¥15.5488
|
|
|
¥15.3906
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBT 模块 950 V, 600 A 3-level IGBT module
- F3L600R10W4S7FC22BPSA1
- Infineon Technologies
-
1:
¥1,888.4108
-
11库存量
|
Mouser 零件编号
726-R10W4S7FC22BPSA1
|
Infineon Technologies
|
IGBT 模块 950 V, 600 A 3-level IGBT module
|
|
11库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
MOSFET模块 Half-bridge 1200 V CoolSiC MOSFET Easy Module
- FF2MR12W3M1HB11BPSA1
- Infineon Technologies
-
1:
¥3,767.2957
-
13库存量
|
Mouser 零件编号
726-FF2MR12W3M1HB11B
|
Infineon Technologies
|
MOSFET模块 Half-bridge 1200 V CoolSiC MOSFET Easy Module
|
|
13库存量
|
|
|
¥3,767.2957
|
|
|
¥3,687.0657
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
Si
|
SMD/SMT
|
|
|
|