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MOSFET Nch Power MOSFET 60V 100A 4.6mohm TO-220
- N0602N-S19-AY
- Renesas Electronics
-
1:
¥29.1992
-
1,363库存量
|
Mouser 零件编号
968-N0602N-S19-AY
|
Renesas Electronics
|
MOSFET Nch Power MOSFET 60V 100A 4.6mohm TO-220
|
|
1,363库存量
|
|
|
¥29.1992
|
|
|
¥14.7239
|
|
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¥13.3227
|
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¥10.8367
|
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查看
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¥10.2604
|
|
|
¥9.8423
|
|
|
¥9.266
|
|
最低: 1
倍数: 1
|
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MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
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IGBT 模块 PIM Q0 T-TYPE NPC 80A 1200V PRESS-FIT PINS
- NXH80T120L2Q0P2G
- onsemi
-
1:
¥652.1343
-
23库存量
|
Mouser 零件编号
863-XH80T120L2Q0P2G
|
onsemi
|
IGBT 模块 PIM Q0 T-TYPE NPC 80A 1200V PRESS-FIT PINS
|
|
23库存量
|
|
|
¥652.1343
|
|
|
¥566.5255
|
|
|
¥470.5659
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
SMD/SMT
|
65.9 mm x 32.5 mm x 12 mm
|
|
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IGBT 模块 PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN TIM)
- NXH80T120L3Q0S3TG
- onsemi
-
1:
¥663.7168
-
23库存量
|
Mouser 零件编号
863-NXH80T120L3Q0S3T
|
onsemi
|
IGBT 模块 PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN TIM)
|
|
23库存量
|
|
|
¥663.7168
|
|
|
¥548.4116
|
|
|
¥497.3695
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Press Fit
|
Q0PACK
|
|
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|
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IGBT 模块 PIM Q0 T-TYPE NPC 80A 1200V SOLDER PINS TIM
- NXH80T120L2Q0S2TG
- onsemi
-
1:
¥647.3318
-
23库存量
|
Mouser 零件编号
863-NXH80T120L2Q0S2T
|
onsemi
|
IGBT 模块 PIM Q0 T-TYPE NPC 80A 1200V SOLDER PINS TIM
|
|
23库存量
|
|
|
¥647.3318
|
|
|
¥562.3897
|
|
|
¥467.1759
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Press Fit
|
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IGBT 模块 IGBT Module 200A 650V
- FS200R07PE4
- Infineon Technologies
-
1:
¥1,129.0734
-
21库存量
|
Mouser 零件编号
641-FS200R07PE4
|
Infineon Technologies
|
IGBT 模块 IGBT Module 200A 650V
|
|
21库存量
|
|
|
¥1,129.0734
|
|
|
¥942.9624
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
|
|
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IGBT 模块 IGBT 1700V 3600A
- FZ3600R17HP4_B2
- Infineon Technologies
-
1:
¥12,518.7389
-
5库存量
|
Mouser 零件编号
641-FZ3600R17HP4_B2
|
Infineon Technologies
|
IGBT 模块 IGBT 1700V 3600A
|
|
5库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
|
|
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IGBT 模块 1700 V, 1500 A dual IGBT module
- FF1500R17IP5BPSA1
- Infineon Technologies
-
1:
¥8,348.6886
-
5库存量
|
Mouser 零件编号
726-FF1500R17IP5BPSA
|
Infineon Technologies
|
IGBT 模块 1700 V, 1500 A dual IGBT module
|
|
5库存量
|
|
|
¥8,348.6886
|
|
|
¥8,004.5923
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
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GaN 场效应晶体管 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN
- TGF3020-SM
- Qorvo
-
1:
¥646.1792
-
40库存量
|
Mouser 零件编号
772-TGF3020-SM
|
Qorvo
|
GaN 场效应晶体管 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN
|
|
40库存量
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN-on-SiC
|
SMD/SMT
|
QFN-16
|
|
|
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达林顿晶体管 50A 60V Bipolar Power NPN
- MJ11028G
- onsemi
-
1:
¥164.5167
-
199库存量
|
Mouser 零件编号
863-MJ11028G
|
onsemi
|
达林顿晶体管 50A 60V Bipolar Power NPN
|
|
199库存量
|
|
|
¥164.5167
|
|
|
¥118.7856
|
|
|
¥94.0499
|
|
最低: 1
倍数: 1
|
|
Darlington Transistors
|
|
Through Hole
|
TO-204-2 (TO-3)
|
NPN
|
|
|
|
IGBT 模块 1700 V, 1800 A dual IGBT module
- FF1800R17IP5
- Infineon Technologies
-
1:
¥11,442.9337
-
2库存量
|
Mouser 零件编号
641-FF1800R17IP5
|
Infineon Technologies
|
IGBT 模块 1700 V, 1800 A dual IGBT module
|
|
2库存量
|
|
|
¥11,442.9337
|
|
|
¥9,023.4907
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
PRIME3
|
|
|
|
|
IGBT 模块 1200 V, 600 A dual IGBT module
- IFF600B12ME4PB11BPSA1
- Infineon Technologies
-
1:
¥1,774.9249
-
12库存量
|
Mouser 零件编号
726-IFF600B12ME4PB11
|
Infineon Technologies
|
IGBT 模块 1200 V, 600 A dual IGBT module
|
|
12库存量
|
|
|
¥1,774.9249
|
|
|
¥1,611.8094
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Press Fit
|
152 mm x 62.5 mm x 20.5 mm
|
|
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|
射频结栅场效应晶体管(RF JFET)晶体管 1.20mm Pwr pHEMT
- QPD2120D
- Qorvo
-
100:
¥211.8298
-
100库存量
|
Mouser 零件编号
772-QPD2120D
|
Qorvo
|
射频结栅场效应晶体管(RF JFET)晶体管 1.20mm Pwr pHEMT
|
|
100库存量
|
|
|
¥211.8298
|
|
|
¥199.9422
|
|
|
报价
|
|
|
报价
|
|
最低: 100
倍数: 100
|
|
RF JFET Transistors
|
|
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GaN 场效应晶体管 DC-6.0GHz 18 Watt 28V GaN
- T2G6001528-Q3
- Qorvo
-
1:
¥1,669.8123
-
123库存量
|
Mouser 零件编号
772-T2G6001528-Q3
|
Qorvo
|
GaN 场效应晶体管 DC-6.0GHz 18 Watt 28V GaN
|
|
123库存量
|
|
|
¥1,669.8123
|
|
|
¥1,660.6932
|
|
|
¥1,132.2939
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
|
NI-200
|
|
|
|
|
GaN 场效应晶体管 DC-6.0GHz 30 Watt 28V GaN Flanged
- T2G6003028-FL
- Qorvo
-
1:
¥2,736.7018
-
44库存量
|
Mouser 零件编号
772-T2G6003028-FL
|
Qorvo
|
GaN 场效应晶体管 DC-6.0GHz 30 Watt 28V GaN Flanged
|
|
44库存量
|
|
|
¥2,736.7018
|
|
|
¥2,721.7632
|
|
|
¥2,028.689
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
|
NI-200
|
|
|
|
|
MOSFET模块 50KW GENII 1200V 80MOHM SIC MOSFET
- NXH80B120MNQ0SNG
- onsemi
-
1:
¥565.2034
-
37库存量
|
Mouser 零件编号
863-NXH80B120MNQ0SNG
|
onsemi
|
MOSFET模块 50KW GENII 1200V 80MOHM SIC MOSFET
|
|
37库存量
|
|
|
¥565.2034
|
|
|
¥429.2079
|
|
|
¥429.1288
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
SiC
|
|
|
|
|
|
|
MOSFET模块 1B 6pack 33.8mm
- CCB032M12FM3
- Wolfspeed
-
1:
¥1,005.9938
-
42库存量
|
Mouser 零件编号
941-CCB032M12FM3
|
Wolfspeed
|
MOSFET模块 1B 6pack 33.8mm
|
|
42库存量
|
|
|
¥1,005.9938
|
|
|
¥931.2217
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
|
N-Channel
|
|
|
|
IGBT 模块 1200 V, 450 A dual IGBT module
- FF450R12ME7B11BPSA1
- Infineon Technologies
-
1:
¥1,162.0807
-
17库存量
|
Mouser 零件编号
726-FF450R12ME7B11BP
|
Infineon Technologies
|
IGBT 模块 1200 V, 450 A dual IGBT module
|
|
17库存量
|
|
|
¥1,162.0807
|
|
|
¥966.6246
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
IGBT 模块 1200 V, 600 A dual IGBT module
- FF600R12ME4WB73BPSA1
- Infineon Technologies
-
1:
¥1,657.0546
-
19库存量
|
Mouser 零件编号
726-FF600R12ME4WB73B
|
Infineon Technologies
|
IGBT 模块 1200 V, 600 A dual IGBT module
|
|
19库存量
|
|
|
¥1,657.0546
|
|
|
¥1,505.0131
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
|
|
|
|
|
IGBT 模块 1200 V, 75 A sixpack IGBT module
- FS75R12KE3B9BPSA1
- Infineon Technologies
-
1:
¥707.5495
-
23库存量
|
Mouser 零件编号
726-FS75R12KE3B9BPS1
|
Infineon Technologies
|
IGBT 模块 1200 V, 75 A sixpack IGBT module
|
|
23库存量
|
|
|
¥707.5495
|
|
|
¥534.6708
|
|
|
¥534.5917
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
IGBT 模块 1700 V, 75 A sixpack IGBT module
- FS75R17W2E4PB11BPSA1
- Infineon Technologies
-
1:
¥511.7657
-
35库存量
|
Mouser 零件编号
726-FS75R17W2E4PB11B
|
Infineon Technologies
|
IGBT 模块 1700 V, 75 A sixpack IGBT module
|
|
35库存量
|
|
|
¥511.7657
|
|
|
¥414.4953
|
|
|
¥349.5542
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
IGBT 模块 750V, 820A SSD
- NVH820S75L4SPB
- onsemi
-
1:
¥4,329.3577
-
3库存量
|
Mouser 零件编号
863-NVH820S75L4SPB
|
onsemi
|
IGBT 模块 750V, 820A SSD
|
|
3库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
SMD/SMT
|
183AB
|
|
|
|
|
IGBT 模块 HYBRID PACK DRIVE
- FS820R08A6P2BBPSA1
- Infineon Technologies
-
1:
¥2,351.53
-
9库存量
|
Mouser 零件编号
726-FS820R08A6P2BBP1
|
Infineon Technologies
|
IGBT 模块 HYBRID PACK DRIVE
|
|
9库存量
|
|
|
¥2,351.53
|
|
|
¥2,175.4308
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-80MHz 600Watts 50Volt Gain 21dB
- MRF157
- MACOM
-
1:
¥9,754.3634
-
8库存量
|
Mouser 零件编号
937-MRF157
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-80MHz 600Watts 50Volt Gain 21dB
|
|
8库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
|
N-Channel
|
|
|
|
IGBT 模块 IGBT Module 1200A 1700V
- DD1200S17H4_B2
- Infineon Technologies
-
1:
¥5,625.1852
-
4库存量
|
Mouser 零件编号
641-DD1200S17H4_B2
|
Infineon Technologies
|
IGBT 模块 IGBT Module 1200A 1700V
|
|
4库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
MOSFET模块 3-Level 1200 V CoolSiC MOSFET Easy Module
- F3L8MR12W2M1HPB11BPSA1
- Infineon Technologies
-
1:
¥1,009.881
-
25库存量
|
Mouser 零件编号
726-F3L8MR12W2M1HPB1
|
Infineon Technologies
|
MOSFET模块 3-Level 1200 V CoolSiC MOSFET Easy Module
|
|
25库存量
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
Si
|
SMD/SMT
|
|
|
|