|
|
MOSFET模块 62 mm C-Series module with CoolSiC Trench MOSFET and pre-applied thermal interface material
- FF5MR20KM1HPHPSA1
- Infineon Technologies
-
1:
¥2,364.8527
-
2库存量
-
16预期 2026/9/4
|
Mouser 零件编号
726-FF5MR20KM1HPHPSA
|
Infineon Technologies
|
MOSFET模块 62 mm C-Series module with CoolSiC Trench MOSFET and pre-applied thermal interface material
|
|
2库存量
16预期 2026/9/4
|
|
最低: 1
倍数: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
62 mm C-Series
|
Tray
|
|
|
|
MOSFET模块 CoolSiC MOSFET half-bridge module 1200 V
- FF6MR12W2M1HB70BPSA1
- Infineon Technologies
-
1:
¥1,736.2902
-
5库存量
|
Mouser 零件编号
726-FF6MR12W2M1HB70B
|
Infineon Technologies
|
MOSFET模块 CoolSiC MOSFET half-bridge module 1200 V
|
|
5库存量
|
|
|
¥1,736.2902
|
|
|
¥1,385.5721
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
106.4 mm x 61.4 mm x 30.5 mm
|
N-Channel
|
|
1.2 kV
|
200 A
|
5.63 mOhms
|
- 10 V, + 20 V
|
5.55 V
|
- 40 C
|
+ 175 C
|
20 mW
|
M1H
|
Tray
|
|
|
|
MOSFET模块 1200 V CoolSiC Mosfet Half-Bridge Module
- FF6MR12W2M1HPB11BPSA1
- Infineon Technologies
-
1:
¥1,283.1715
-
6库存量
|
Mouser 零件编号
726-FF6MR12W2M1HPB11
|
Infineon Technologies
|
MOSFET模块 1200 V CoolSiC Mosfet Half-Bridge Module
|
|
6库存量
|
|
|
¥1,283.1715
|
|
|
¥1,227.3382
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
106.4 mm x 61.4 mm x 30.5 mm
|
N-Channel
|
|
1.2 kV
|
200 A
|
5.63 mOhms
|
- 10 V, + 20 V
|
5.55 V
|
- 40 C
|
+ 150 C
|
|
|
Tray
|
|
|
|
MOSFET模块 EASY
- FF7MR12W1M1HB17BPSA1
- Infineon Technologies
-
1:
¥1,084.1559
-
3库存量
|
Mouser 零件编号
726-FF7MR12W1M1HB17B
|
Infineon Technologies
|
MOSFET模块 EASY
|
|
3库存量
|
|
|
¥1,084.1559
|
|
|
¥1,006.3215
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Press Fit
|
48 mm x 33.8 mm x 12 mm
|
N-Channel
|
|
1.2 kV
|
105 A
|
5.8 mOhms
|
- 7 V, + 20 V
|
5.15 V
|
- 40 C
|
+ 175 C
|
20 mW
|
|
Tray
|
|
|
|
MOSFET模块 1200V 3M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
- NXH003P120M3F2PTHG
- onsemi
-
1:
¥2,092.1385
-
1库存量
-
40预期 2026/10/12
|
Mouser 零件编号
863-H003P120M3F2PTHG
|
onsemi
|
MOSFET模块 1200V 3M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
|
|
1库存量
40预期 2026/10/12
|
|
|
¥2,092.1385
|
|
|
¥1,848.6235
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Press Fit
|
PIM-36
|
|
|
1.2 kV
|
350 A
|
5.88 mohms
|
- 10 V, + 22 V
|
2.4 V
|
- 40 C
|
+ 175 C
|
979 W
|
NXH003P120M3F2PTHG
|
Tray
|
|
|
|
MOSFET模块 1200V 4M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
- NXH004P120M3F2PTHG
- onsemi
-
1:
¥1,560.1119
-
1库存量
-
40预期 2026/8/18
|
Mouser 零件编号
863-H004P120M3F2PTHG
|
onsemi
|
MOSFET模块 1200V 4M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
|
|
1库存量
40预期 2026/8/18
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Press Fit
|
PIM-36
|
|
|
1.2 kV
|
284 A
|
7.5 mohms
|
- 10 V, + 22 V
|
2.8 V
|
- 40 C
|
+ 175 C
|
785 W
|
NXH004P120M3F2PTHG
|
Tray
|
|
|
|
MOSFET模块 1200V 6MOHM M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
- NXH006P120M3F2PTHG
- onsemi
-
1:
¥1,275.6457
-
1库存量
|
Mouser 零件编号
863-H006P120M3F2PTHG
|
onsemi
|
MOSFET模块 1200V 6MOHM M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
|
|
1库存量
|
|
|
¥1,275.6457
|
|
|
¥1,251.0795
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Press Fit
|
PIM-36
|
N-Channel
|
|
1.2 kV
|
191 A
|
8 mOhms
|
- 10 V, + 22 V
|
2.8 V
|
- 40 C
|
+ 175 C
|
556 W
|
NXH006P120M3F2PTHG
|
Tray
|
|
|
|
MOSFET模块 SIC A1HPM 1200 V
- NVVR26A120M1WSB
- onsemi
-
1:
¥3,819.5808
-
1库存量
-
36预期 2026/10/13
|
Mouser 零件编号
863-NVVR26A120M1WSB
|
onsemi
|
MOSFET模块 SIC A1HPM 1200 V
|
|
1库存量
36预期 2026/10/13
|
|
最低: 1
倍数: 1
最大: 10
|
|
|
SiC
|
Screw Mount
|
AHPM-15
|
N-Channel
|
2 Channel
|
1.2 kV
|
400 A
|
|
- 10 V, + 25 V
|
3.2 V
|
- 40 C
|
+ 175 C
|
1 kW
|
|
Tube
|
|
|
|
MOSFET模块 APM32 SIC POWER MODULE
- NVXK2PR80WXT2
- onsemi
-
1:
¥444.5194
-
27库存量
|
Mouser 零件编号
863-NVXK2PR80WXT2
|
onsemi
|
MOSFET模块 APM32 SIC POWER MODULE
|
|
27库存量
|
|
|
¥444.5194
|
|
|
¥371.7248
|
|
|
¥349.396
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Through Hole
|
APM-32
|
N-Channel
|
4 Channel
|
1.2 kV
|
31 A
|
116 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
- 55 C
|
+ 175 C
|
208 W
|
NVXK2PR80WXT2
|
Tube
|
|
|
|
MOSFET模块 30M OHM 1200V 40A M3S SIC FULL BRIDGE MODULE
- NXH030F120M3F1PTG
- onsemi
-
1:
¥628.8111
-
8库存量
|
Mouser 零件编号
863-NXH030F12M3F1PTG
|
onsemi
|
MOSFET模块 30M OHM 1200V 40A M3S SIC FULL BRIDGE MODULE
|
|
8库存量
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Screw Mount
|
PIM-22
|
N-Channel
|
4 Channel
|
1.2 kV
|
38 A
|
38.5 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 150 C
|
100 W
|
NXH030F120M3F1PTG
|
Tray
|
|
|
|
MOSFET模块 30M 1200V 40A M3S SIC HALF BRIDGE MODULE
- NXH030P120M3F1PTG
- onsemi
-
1:
¥580.0064
-
14库存量
|
Mouser 零件编号
863-NXH030P12M3F1PTG
|
onsemi
|
MOSFET模块 30M 1200V 40A M3S SIC HALF BRIDGE MODULE
|
|
14库存量
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Screw Mount
|
PIM-18
|
N-Channel
|
2 Channel
|
1.2 kV
|
42 A
|
38.5 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 150 C
|
100 W
|
NXH030P120M3F1PTG
|
Tray
|
|
|
|
MOSFET模块 MOSFET SIC 1200 V 25 mOhm SOT-227
- MSC025SMA120J
- Microchip Technology
-
1:
¥472.9728
-
50库存量
|
Mouser 零件编号
494-MSC025SMA120J
|
Microchip Technology
|
MOSFET模块 MOSFET SIC 1200 V 25 mOhm SOT-227
|
|
50库存量
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
|
1.2 kV
|
84 A
|
31 mOhms
|
- 10 V, + 25 V
|
5 V
|
- 55 C
|
+ 175 C
|
321 W
|
|
Tube
|
|
|
|
MOSFET模块 MOSFET SIC 1200 V 17 mOhm SOT-227
- MSC017SMA120J
- Microchip Technology
-
1:
¥403.2518
-
101库存量
-
250在途量
|
Mouser 零件编号
579-MSC017SMA120J
|
Microchip Technology
|
MOSFET模块 MOSFET SIC 1200 V 17 mOhm SOT-227
|
|
101库存量
250在途量
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
88 A
|
17.6 mOhms
|
- 10 V, + 23 V
|
2.7 V
|
- 55 C
|
+ 175 C
|
278 W
|
|
Tube
|
|
|
|
MOSFET模块 EASY
- F3L11MR12W2M1B74BOMA1
- Infineon Technologies
-
1:
¥1,158.1031
-
12库存量
|
Mouser 零件编号
726-F3L11MR12W2M1B74
|
Infineon Technologies
|
MOSFET模块 EASY
|
|
12库存量
|
|
|
¥1,158.1031
|
|
|
¥1,076.0538
|
|
最低: 1
倍数: 1
|
|
|
SiC
|
Press Fit
|
Module
|
N-Channel
|
|
1.2 kV
|
100 A
|
11.3 mOhms
|
- 10 V, + 20 V
|
5.55 V
|
- 40 C
|
+ 150 C
|
20 mW
|
|
Tray
|
|
|
|
MOSFET模块 650V/78A miniBLOC SOT-227
- IXFN100N65X2
- IXYS
-
1:
¥331.2821
-
374库存量
|
Mouser 零件编号
747-IXFN100N65X2
|
IXYS
|
MOSFET模块 650V/78A miniBLOC SOT-227
|
|
374库存量
|
|
|
¥331.2821
|
|
|
¥246.1592
|
|
|
¥238.9611
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
650 V
|
78 A
|
30 mOhms
|
- 30 V, + 30 V
|
5 V
|
- 55 C
|
+ 150 C
|
595 W
|
650V Ultra Junction X2
|
Tube
|
|
|
|
MOSFET模块 140 Amps 200V 0.018 Rds
- IXFN140N20P
- IXYS
-
1:
¥268.2507
-
413库存量
|
Mouser 零件编号
747-IXFN140N20P
|
IXYS
|
MOSFET模块 140 Amps 200V 0.018 Rds
|
|
413库存量
|
|
|
¥268.2507
|
|
|
¥203.3209
|
|
|
¥198.9365
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
200 V
|
115 A
|
18 mOhms
|
- 20 V, + 20 V
|
5 V
|
- 55 C
|
+ 175 C
|
680 W
|
IXFN140N20
|
Tube
|
|
|
|
MOSFET模块 140 Amps 300V 0.024 Ohm Rds
- IXFN140N30P
- IXYS
-
1:
¥342.5256
-
172库存量
-
300预期 2027/2/15
|
Mouser 零件编号
747-IXFN140N30P
|
IXYS
|
MOSFET模块 140 Amps 300V 0.024 Ohm Rds
|
|
172库存量
300预期 2027/2/15
|
|
|
¥342.5256
|
|
|
¥292.0711
|
|
|
¥241.029
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
300 V
|
115 A
|
24 mOhms
|
- 20 V, + 20 V
|
|
- 55 C
|
+ 150 C
|
700 W
|
IXFN140N30
|
Tube
|
|
|
|
MOSFET模块 TRENCH HIPERFET PWR MOSFET 300V 130A
- IXFN160N30T
- IXYS
-
1:
¥307.9476
-
224库存量
|
Mouser 零件编号
747-IXFN160N30T
|
IXYS
|
MOSFET模块 TRENCH HIPERFET PWR MOSFET 300V 130A
|
|
224库存量
|
|
|
¥307.9476
|
|
|
¥228.0453
|
|
|
¥223.3332
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
300 V
|
130 A
|
19 mOhms
|
- 20 V, + 20 V
|
5 V
|
- 55 C
|
+ 150 C
|
900 W
|
IXFN160N30
|
Tube
|
|
|
|
MOSFET模块 180 Amps 150V 0.011 Rds
- IXFN180N15P
- IXYS
-
1:
¥276.1833
-
460库存量
-
1,560在途量
|
Mouser 零件编号
747-IXFN180N15P
|
IXYS
|
MOSFET模块 180 Amps 150V 0.011 Rds
|
|
460库存量
1,560在途量
在途量:
790 预期 2026/10/26
770 预期 2026/11/23
|
|
|
¥276.1833
|
|
|
¥221.8416
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
150 V
|
150 A
|
11 mOhms
|
- 20 V, + 20 V
|
|
- 55 C
|
+ 175 C
|
680 W
|
IXFN180N15
|
Tube
|
|
|
|
MOSFET模块 155A 250V
- IXFN180N25T
- IXYS
-
1:
¥292.3988
-
246库存量
|
Mouser 零件编号
747-IXFN180N25T
|
IXYS
|
MOSFET模块 155A 250V
|
|
246库存量
|
|
|
¥292.3988
|
|
|
¥215.9769
|
|
|
¥209.4342
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
250 V
|
168 A
|
12.9 mOhms
|
- 20 V, + 20 V
|
3 V
|
- 55 C
|
+ 150 C
|
900 W
|
IXFN180N25
|
Tube
|
|
|
|
MOSFET模块 N-Channel: Power MOSFET w/Fast Diode
- IXFN210N30P3
- IXYS
-
1:
¥455.1866
-
325库存量
|
Mouser 零件编号
747-IXFN210N30P3
|
IXYS
|
MOSFET模块 N-Channel: Power MOSFET w/Fast Diode
|
|
325库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
300 V
|
192 A
|
14.5 mOhms
|
- 20 V, + 20 V
|
|
- 55 C
|
+ 150 C
|
1.5 kW
|
IXFN210N30
|
Tube
|
|
|
|
MOSFET模块 GigaMOS Trench T2 HiperFET PWR MOSFET
- IXFN360N15T2
- IXYS
-
1:
¥481.493
-
267库存量
-
170预期 2026/8/13
|
Mouser 零件编号
747-IXFN360N15T2
|
IXYS
|
MOSFET模块 GigaMOS Trench T2 HiperFET PWR MOSFET
|
|
267库存量
170预期 2026/8/13
|
|
|
¥481.493
|
|
|
¥416.4728
|
|
|
¥380.5727
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
150 V
|
310 A
|
4 mOhms
|
- 20 V, + 20 V
|
5 V
|
- 55 C
|
+ 175 C
|
1.07 mW
|
IXFN360N15
|
Tube
|
|
|
|
MOSFET模块 TRENCH HIPERFET PWR MOSFET 100V 420A
- IXFN420N10T
- IXYS
-
1:
¥309.6878
-
136库存量
-
600预期 2026/10/26
|
Mouser 零件编号
747-IXFN420N10T
|
IXYS
|
MOSFET模块 TRENCH HIPERFET PWR MOSFET 100V 420A
|
|
136库存量
600预期 2026/10/26
|
|
|
¥309.6878
|
|
|
¥256.9168
|
|
|
¥236.2378
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
100 V
|
420 A
|
2.3 mOhms
|
- 20 V, + 20 V
|
2.5 V
|
- 55 C
|
+ 175 C
|
1.07 mW
|
IXFN420N10
|
Tube
|
|
|
|
MOSFET模块 Q3Class HiPerFET Pwr MOSFET 1000V/38A
- IXFN44N100Q3
- IXYS
-
1:
¥658.8352
-
82库存量
|
Mouser 零件编号
747-IXFN44N100Q3
|
IXYS
|
MOSFET模块 Q3Class HiPerFET Pwr MOSFET 1000V/38A
|
|
82库存量
|
|
|
¥658.8352
|
|
|
¥551.6321
|
|
|
¥479.007
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
1 kV
|
38 A
|
220 mOhms
|
- 30 V, + 30 V
|
|
|
+ 150 C
|
960 W
|
IXFN44N100
|
Tube
|
|
|
|
MOSFET模块 36 Amps 800V
- IXFN44N80P
- IXYS
-
1:
¥323.5077
-
112库存量
|
Mouser 零件编号
747-IXFN44N80P
|
IXYS
|
MOSFET模块 36 Amps 800V
|
|
112库存量
|
|
|
¥323.5077
|
|
|
¥240.2945
|
|
|
¥237.5599
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
800 V
|
39 A
|
190 mOhms
|
- 30 V, + 30 V
|
5 V
|
- 55 C
|
+ 150 C
|
694 W
|
HiPerFET
|
Tube
|
|