POWEREX 无线和射频半导体

结果: 1,770
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 安装风格 封装 / 箱体
Mini-Circuits 射频检测器 Power Detector/SMA/ROHS MSL 3
8在途量
最低: 1
倍数: 1

RF Detector
Marki Microwave 射频放大器 A high-linearity low noise amplifier capable of providing +20 dBm output power up to 10 GHz. The ADM-8095PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
121在途量
最低: 1
倍数: 1

RF Amplifier SMD/SMT DFN
Mini-Circuits 射频放大器 Connectorized 2.92mm, Low Noise, Medium Power Amplifier, 18 GHz to 40 GHz 50ohm
1预期 2026/11/11
最低: 1
倍数: 1

RF Amplifier
Mini-Circuits 射频放大器 Connectorized SMA, Medium Power Amplifier, 10 MHz to 1200 MHz, 50ohm
6在途量
最低: 1
倍数: 1

RF Amplifier Screw
Guerrilla RF 射频放大器 HIGH EFFICIENCY 6 WATT POWER AMPLIFIER TUNING RANGE: 100 TO 600 MHZ
7,434在途量
最低: 1
倍数: 1
: 1,500
RF Amplifier SMD/SMT QFN-16
Marki Microwave 射频放大器 A high-linearity, high gain, low noise distributed amplifier capable of providing +22 dBm output power up to 30 GHz. When driven with an input power of 0 to +5 dBm, it can provide sufficient LO drive to power all H and most S diode mixers to 30GHz.
30在途量
最低: 1
倍数: 1

RF Amplifier SMD/SMT QFN

Microchip Technology 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
69预期 2026/10/15
最低: 1
倍数: 1

RF MOSFET Transistors Through Hole TO-247-3
Texas Instruments 射频前端 Quad-CH Intg AFE A 5 95-AFE5401TRGCRQ1 A A 595-AFE5401TRGCRQ1
227预期 2026/12/23
最低: 1
倍数: 1
: 250

RF Front End SMD/SMT VQFN-64
Mini-Circuits 射频放大器 Gain Block, 0.0025 - 500 MHz, 50ohm
29在途量
最低: 1
倍数: 1

RF Amplifier SMD/SMT S32
Mini-Circuits 射频放大器 Gain Block, 10 MHz - 4.2 GHz, 50 Ohm
4预期 2026/11/2
最低: 1
倍数: 1

RF Amplifier Screw
NXP Semiconductors AFV09P350-04NR3
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
248预期 2026/10/26
最低: 1
倍数: 1
: 250

RF MOSFET Transistors SMD/SMT OM-780-4
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V 233库存量
最低: 1
倍数: 1
RF MOSFET Transistors Through Hole TO-247-3
Qorvo 射频放大器 45-1003MHz Gain 22.5dB
18预期 2026/12/11
最低: 1
倍数: 1

RF Amplifier Screw SOT-115J-9
Marki Microwave 射频放大器 A high-linearity low noise amplifier capable of providing +23 dBm output power up to 6 GHz. The ADM-8096PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
26在途量
最低: 1
倍数: 1

RF Amplifier SMD/SMT DFN
Guerrilla RF 射频放大器 5 dBm Linear PA Module Tuning Range: 4.4 5. GHz
1,496在途量
最低: 1
倍数: 1
: 1,500

RF Amplifier SMD/SMT LAMM-12
Microchip Technology VRF2933MP
Microchip Technology 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 300 W 150 MHz M177 MATCHED PAIR 24库存量
最低: 1
倍数: 1

RF MOSFET Transistors Screw Mount
Guerrilla RF 射频放大器 High Linearity Power Amplifier, OP1dB >32.0 dBm; 1.70 - 1.80 GHz
1,315预期 2026/9/4
最低: 1
倍数: 1
: 1,500

RF Amplifier SMD/SMT QFN-16
Qorvo QPC8010QSR
Qorvo RF 开关 IC Hi Power SOI SPDT-Auto
300预期 2026/9/21
最低: 1
倍数: 1
: 100

RF Switch ICs SMD/SMT
KYOCERA AVX LA13740P03DBFBK
KYOCERA AVX 衰减器 HIGH POWER RF RESIST IVE
78预期 2027/2/10
最低: 1
倍数: 1

Attenuators
Microchip Technology 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 400 W 65 MHz T3C
10预期 2026/10/26
最低: 1
倍数: 1

RF MOSFET Transistors Screw Mount
Skyworks Solutions, Inc. SKY85601-11
Skyworks Solutions, Inc. RF 开关 IC 4.9-5.9GHz SPDT NF 2.5dB Gain 12dB 39工厂有库存
最低: 1
倍数: 1
: 3,000

RF Switch ICs SMD/SMT
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS trans 无库存交货期 13 周
最低: 100
倍数: 100
: 100

RF MOSFET Transistors SMD/SMT SOT1275-1-7
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS transistor 无库存交货期 16 周
最低: 100
倍数: 100
: 100

RF MOSFET Transistors SMD/SMT SOT502B-3
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power LDMOS Transistor 无库存交货期 16 周
最低: 60
倍数: 60

RF MOSFET Transistors Screw Mount SOT1135A-3
Fairview Microwave 射频循环器 High Power Circulator SMA Female with 17 dB Isolation from 4 GHz to 8 GHz Rated to 80 Watts 无库存交货期 3 周
最低: 1
倍数: 1

RF Circulators