|
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
- AFT09MS031GNR1
- NXP Semiconductors
-
1:
¥286.5228
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-AFT09MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
|
|
无库存交货期 53 周
|
|
|
¥286.5228
|
|
|
¥230.2375
|
|
|
¥214.8808
|
|
|
¥210.7902
|
|
|
查看
|
|
|
¥193.2413
|
|
|
¥200.2021
|
|
|
¥193.9419
|
|
|
¥193.2413
|
|
最低： 1
倍数： 1
:
500
|
|
|
N-Channel
|
Si
|
10 A
|
40 V
|
764 MHz to 941 MHz
|
15.7 dB
|
32 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
- MRF1518NT1
- NXP Semiconductors
-
1:
¥128.707
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF1518NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
|
|
无库存交货期 53 周
|
|
|
¥128.707
|
|
|
¥84.3319
|
|
|
¥71.5742
|
|
|
¥66.5231
|
|
|
查看
|
|
|
¥49.8556
|
|
|
¥62.1048
|
|
|
¥58.7035
|
|
|
¥49.8556
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
520 MHz
|
13 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
- MRF6V12250HR5
- NXP Semiconductors
-
1:
¥6,083.7618
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12250HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
|
|
无库存交货期 53 周
|
|
|
¥6,083.7618
|
|
|
¥5,762.2429
|
|
|
¥5,762.2429
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
|
100 V
|
960 MHz to 1.215 GHz
|
20.3 dB
|
275 W
|
|
+ 150 C
|
Screw Mount
|
NI-780
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
- MRF6V12500HR5
- NXP Semiconductors
-
1:
¥8,068.0305
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12500HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
|
|
无库存交货期 53 周
|
|
|
¥8,068.0305
|
|
|
¥8,068.0305
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
|
110 V
|
1.215 MHz to 960 MHz
|
19.7 dB
|
500 W
|
|
+ 150 C
|
Screw Mount
|
NI-780H-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
- MRFE6VP5600HR5
- NXP Semiconductors
-
1:
¥4,392.1857
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP5600HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
|
|
无库存交货期 53 周
|
|
|
¥4,392.1857
|
|
|
¥4,392.1857
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
2 A
|
130 V
|
1.8 MHz to 600 MHz
|
25 dB
|
600 W
|
|
+ 150 C
|
SMD/SMT
|
NI-1230
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
- MRFE6VP5600HR6
- NXP Semiconductors
-
1:
¥2,827.2826
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP5600HR6
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
|
|
无库存交货期 53 周
|
|
|
¥2,827.2826
|
|
|
¥2,435.4099
|
|
|
¥2,337.6197
|
|
|
¥2,205.7713
|
|
|
¥2,205.7713
|
|
最低： 1
倍数： 1
:
150
|
|
|
N-Channel
|
Si
|
|
130 V
|
1.8 MHz to 600 MHz
|
25 dB
|
600 W
|
|
+ 150 C
|
SMD/SMT
|
NI-1230
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
NXP Semiconductors MRF6VP121KHR5
- MRF6VP121KHR5
- NXP Semiconductors
-
1:
¥7,984.1619
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6VP121KHR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
|
|
无库存交货期 53 周
|
|
|
¥7,984.1619
|
|
|
¥7,984.1619
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
|
110 V
|
|
20 dB
|
1 kW
|
|
+ 150 C
|
Screw Mount
|
NI-1230-4
|
Reel, Cut Tape
|
|
