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TP65H035G4WSQA

Name: Renesas Electronics TP65H035G4WSQA
Brand: Renesas Electronics
SKU: 227-TP65H035G4WSQA
Price: 143.62 RMB
Availability: LimitedAvailability

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Mouser编号：

227-TP65H035G4WSQA

制造商编号：

TP65H035G4WSQA

制造商：

Renesas Electronics

说明：

GaN 场效应晶体管 GAN FET 650V 46.5A TO247

寿命周期:

受限供货情况:

Mouser当前不供应此零件编号的零件。产品可能为限量销售或工厂特别订单。

数据表:

TP65H035G4WSQA 数据表 (PDF)

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产品属性	属性值	选择属性
制造商:	Renesas Electronics
产品种类:	GaN 场效应晶体管
RoHS:
安装风格:	Through Hole
封装 / 箱体:	TO-247-3
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	650 V
Id-连续漏极电流:	47.2 A
Rds On-漏源导通电阻:	41 mOhms
Vgs - 栅极-源极电压:	- 20 V, + 20 V
Vgs th-栅源极阈值电压:	4.8 V
Qg-栅极电荷:	22 nC
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
Pd-功率耗散:	187 W
通道模式:	Enhancement
商标名:	SuperGaN
商标:	Renesas Electronics
下降时间:	10 ns
封装:	Tube
产品类型:	GaN FETs
上升时间:	10 ns
系列:	Gen IV SuperGaN
工厂包装数量:	30
子类别:	Transistors
技术:	GaN
典型关闭延迟时间:	94 ns
典型接通延迟时间:	60 ns

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已选择的属性: 0

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数据表

TP65H035G4WSQA 数据表 (PDF)

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合规代码

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原产地分类

原产国:: 菲律宾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

Automotive (AEC-Q101) Qualified GaN FETs

Renesas Electronics Automotive (AEC-Q101) Qualified GaN FETs are normally-off devices that offer superior reliability and performance. The devices combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The series offers improved efficiency over silicon through lower gate charge and crossover loss, and smaller reverse recovery charge. Renesas Electronics Automotive (AEC-Q101) Qualified GaN FETs are ideal for automotive, datacom, PV inverters, and industrial applications.

TP65H035G4WSQA 650V SuperGaN® FET

Renesas Electronics TP65H035G4WSQA 650V SuperGaN® FET is a normally-off device using Renesas Electronics's Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET. The device offers superior reliability and performance, and with the SuperGaN® platform, it uses advanced epi and patented design technologies to simplify manufacturability. This improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.