FDMS86500DC

onsemi
512-FDMS86500DC
FDMS86500DC

制造商:

说明:
MOSFET 60V/20V NCh DualCool PowerTrench MOSFET

ECAD模型:
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库存量: 3,197

库存:
3,197 可立即发货
生产周期:
16 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按3000的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥35.6515 ¥35.65
¥24.7357 ¥247.36
¥17.6958 ¥1,769.58
¥16.5432 ¥8,271.60
¥16.3737 ¥16,373.70
整卷卷轴(请按3000的倍数订购)
¥13.4018 ¥40,205.40
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

产品属性 属性值 选择属性
onsemi
产品种类: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DualCool-56-8
N-Channel
1 Channel
60 V
29 A
2.3 mOhms
- 20 V, 20 V
2.5 V
76 nC
- 55 C
+ 150 C
125 W
Enhancement
Reel
Cut Tape
MouseReel
商标: onsemi
配置: Single
产品类型: MOSFETs
系列: FDMS86500DC
工厂包装数量: 3000
子类别: Transistors
晶体管类型: 2 N-Channel
单位重量: 90 mg
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已选择的属性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

PowerTrench® MOSFET

仙童 提供业界最齐全的 PowerTrench® MOSFET 产品组合。您可以从多种技术中选择适合您应用的 MOSFET。仙童 提供 N 沟道和 P 沟道版本的 MOSFET,利用其先进的 Power Trench® 工艺,该工艺经优化实现了低 RDS(ON) 开关性能和坚固性。这些 PowerTrench® MOSFET 可满足几乎任何应用的需要,如负载开关、一次开关、移动计算、直流-直流转换器、同步整流器等等。
了解更多

Dual Cool™ MOSFETs

onsemi Dual Cool™ PowerTrench® MOSFETs provide Dual Cool packaging technology that features bottom- and top-side cooling in a PQFN package. The PQFN footprint is an industry standard and provides performance flexibility for the designer. The Dual Cool MOSFETs feature enhanced dual path thermal performance and improved parasitics over wire-bonded predecessors. The use of a heat sink with Dual Cool packaging technology provides even more impressive results. When a heat sink is used with onsemi Dual Cool package technology, synchronous buck converters deliver higher output current and increased power density.

N-Channel Dual Cool PowerTrench® MOSFET

The FDMS86101DC and FMDS83500DC N-Channel Dual Cool™ PowerTrench® MOSFETs are produced using onsemi's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest RDS(ON) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Typical applications for these items include primary DC-DC MOSFET, secondary synchronous rectifier, load switch, telecom secondary side rectification and high end server/workstation Vcore low side.