意法半导体 650V M 系列沟槽式栅极场终止型 IGBT

意法半导体 650V M 系列沟槽式栅极场终止型 IGBT 是一款高速 IGBT,采用了先进的、具有专利的沟槽式栅极和场终止型结构。650V M 系列提供 3A-150A 最大集电极电流,适用于工作频率高达 100kHz 的应用。它们具有经优化的设计,可定制成内嵌反向并联二极管。
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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 系列 封装
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 650 V, 120 A low loss 380库存量
最低: 1
倍数: 1

Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 650 V, 6 A low loss 3,710库存量
最低: 1
倍数: 1
卷轴: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 30 A low loss 980库存量
最低: 1
倍数: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 6 A low loss 无库存交货期 15 周
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package 1,457库存量
最低: 1
倍数: 1
卷轴: 1,000

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 650 V, 4 A low loss 2,128库存量
最低: 1
倍数: 1
卷轴: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT 54库存量
最低: 1
倍数: 1

- 20 V, 20 V HB2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,470库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 75 A low loss 679库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads 692库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 15 A low loss 140库存量
最低: 1
倍数: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 30 A 31 W - 55 C + 175 C STGF15M65DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,131库存量
最低: 1
倍数: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 38 W - 55 C + 175 C STGF30M65DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 10 A low loss 447库存量
2,000预期 2026/11/9
最低: 1
倍数: 1

Si STGP10M65DF2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 8 A low loss 344库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 75 A low loss
396预期 2026/3/26
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package 无库存交货期 15 周
最低: 1
倍数: 1
卷轴: 1,000

Si STGB10M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 650 V, 4 A low loss 无库存交货期 15 周
最低: 2,000
倍数: 1,000
卷轴: 1,000

Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel