MDmesh™ M9 MOSFET

STMicroelectronics MDmesh™ M9功率MOSFET具有增强器件结构、低导通电阻和低栅极电荷值。这些功率MOSFET具有高反向二极管dv/dt和MOSFET dv/dt稳健性、大功率密度和低导通损耗。MDmesh M9功率MOSFET还具有高开关速度、高效率和低开关功率损耗。这些功率MOSFET设计采用创新的高压超级结技术,具有出色的品质因数 (FoM)。高FoM可实现更高的功率水平和密度,从而实现更紧凑的解决方案。典型应用包括服务器、电信数据中心、5G电源站、微逆变器和快速充电器。

结果: 20
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
STMicroelectronics MOSFET N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET 931库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 56 A 43 mOhms - 30 V, 30 V 4.5 V 78.6 nC - 55 C + 150 C 245 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET 542库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 55 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 245 W Enhancement Tube
STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET 796库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 51 A 50 mOhms 30 V 4.5 V 100 nC - 50 C + 150 C 266 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET 403库存量
最低: 1
倍数: 1
卷轴: 600

Si SMD/SMT HU3PAK-7 N-Channel 1 Channel 650 V 51 A 50 mOhms 30 V 4.5 V 100 nC - 55 C + 150 C 245 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET 244库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT PowerFLAT-5 N-Channel 600 V 39 A 65 mOhms - 30 V, 30 V 4.5 V 66 nC - 55 C + 150 C 202 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET 236库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 58 A 44 mOhms 30 V 4.2 V 110 nC - 55 C + 150 C 166 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET 1,142库存量
1,000预期 2026/3/5
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 600 V 27 A 99 mOhms - 30 V, 30 V 4.5 V 44 nC - 55 C + 150 C 179 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 531库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 95 A 23 mOhms - 30 V, 30 V 4.2 V 230 nC - 55 C + 150 C 463 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 580库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 366库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 95 A - 30 V, 30 V 4.2 V 230 nC - 55 C + 150 C Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 1,195库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 650 V 54 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET 783库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 17 A 160 mOhms - 30 V, 30 V 4.2 V 32 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET 113库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 150 mOhms - 30 V, 30 V 3.2 V 32 nC - 55 C + 150 C 140 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET 82库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 56 A 43 mOhms - 30 V, 30 V 4.5 V 78.6 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 37 mOhm typ., 54 A MDmesh DM9 Power MOSFET
600在途量
最低: 1
倍数: 1
卷轴: 600

Si SMD/SMT HU3PAK-7 N-Channel 1 Channel 600 V 54 A 46 mOhms 30 V 4.5 V 77 nC - 55 C + 150 C 245 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
Si SMD/SMT PowerFLAT-4 N-Channel 1 Channel 650 V 44 A 65 mOhms - 30 V, 30 V 4.5 V 78 nC - 55 C + 150 C 223 W Enhancement Reel, Cut Tape
STMicroelectronics MOSFET N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
Si SMD/SMT PowerFLAT-4 N-Channel 1 Channel 650 V 55 A 35 mOhms - 30 V, 30 V 4.5 V 107 nC - 55 C + 150 C 167 W Enhancement Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
Si Through Hole TO-247-3 N-Channel 1 Channel 30 V 62 A 35 mOhms - 30 V, 30 V 4.2 V 112 nC - 55 C + 150 C 321 mW Enhancement Tube
STMicroelectronics STO60N030M9
STMicroelectronics MOSFET N-channel 600 V, 23 mOhm typ., 79 A MDmesh M9 Power MOSFET in a TO-LL package

Reel, Cut Tape
STMicroelectronics STO60N045DM9
STMicroelectronics MOSFET N-channel 600 V, 39 mOhm typ., 55 A, MDmesh DM9 Power MOSFET in a TO-LL package

Reel, Cut Tape