|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
¥298.3539
-
1,073库存量
-
1,000预期 2026/10/15
|
Mouser 零件编号
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,073库存量
1,000预期 2026/10/15
|
|
|
¥298.3539
|
|
|
¥223.9999
|
|
|
¥223.9999
|
|
最低: 1
倍数: 1
最大: 10
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
¥159.1492
-
3,317库存量
|
Mouser 零件编号
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,317库存量
|
|
|
¥159.1492
|
|
|
¥113.4068
|
|
|
¥101.0785
|
|
|
¥99.8355
|
|
|
¥94.4567
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
¥215.3893
-
710库存量
|
Mouser 零件编号
726-IMBG120R012M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
710库存量
|
|
|
¥215.3893
|
|
|
¥156.166
|
|
|
¥148.6402
|
|
|
¥145.3293
|
|
|
¥137.5549
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
¥133.8372
-
386库存量
|
Mouser 零件编号
726-IMBG120R022M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
386库存量
|
|
|
¥133.8372
|
|
|
¥94.3776
|
|
|
¥80.8967
|
|
|
¥76.5123
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
¥114.7289
-
1,673库存量
|
Mouser 零件编号
726-IMBG120R026M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,673库存量
|
|
|
¥114.7289
|
|
|
¥80.23
|
|
|
¥80.23
|
|
最低: 1
倍数: 1
最大: 60
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
¥89.5864
-
316库存量
|
Mouser 零件编号
726-IMBG120R040M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
316库存量
|
|
|
¥89.5864
|
|
|
¥61.7884
|
|
|
¥47.9798
|
|
|
¥45.4147
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
¥65.0202
-
841库存量
|
Mouser 零件编号
726-IMBG120R078M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
841库存量
|
|
|
¥65.0202
|
|
|
¥44.0926
|
|
|
¥32.1711
|
|
|
¥31.4366
|
|
|
¥29.6964
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
¥56.0028
-
649库存量
|
Mouser 零件编号
726-IMBG120R116M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
649库存量
|
|
|
¥56.0028
|
|
|
¥36.1487
|
|
|
¥27.2104
|
|
|
¥25.7301
|
|
|
¥24.3176
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
¥47.8103
-
1,817库存量
|
Mouser 零件编号
726-IMBG120R181M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,817库存量
|
|
|
¥47.8103
|
|
|
¥31.9338
|
|
|
¥22.826
|
|
|
¥20.8485
|
|
|
¥19.6846
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
¥43.1773
-
6,769库存量
|
Mouser 零件编号
726-IMBG120R234M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
6,769库存量
|
|
|
¥43.1773
|
|
|
¥28.702
|
|
|
¥20.4304
|
|
|
¥18.193
|
|
|
¥18.1139
|
|
|
¥17.1195
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
¥74.6139
-
1,968预期 2026/7/9
|
Mouser 零件编号
726-IMBG120R053M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,968预期 2026/7/9
|
|
|
¥74.6139
|
|
|
¥50.9517
|
|
|
¥37.7194
|
|
|
¥35.6515
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|