GP2T020A120H

GP2T020A120H 1200V SiC MOSFET

SemiQ GP2T020A120H 1200V SiC MOSFET can be combined with silicon carbide Schottky diodes to achieve optimal performance without the trade-offs made with Silicon devices. This MOSFET offers reduced switching losses, higher efficiency, reduced heat sink size, and increased power density. The GP2T020A120H MOSFET features high-speed switching, longer creepage distance, 564W power dissipation, and 800mJ single pulse avalanche energy. This MOSFET is ideal for designers working on EV charging, industrial controls, and HVAC systems. Typical applications include power factor correction, DC-DC converter primary switching, and synchronous rectification.