|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 720-960 MHz 100 W AVG. 48 V
NXP Semiconductors AFV09P350-04NR3
- AFV09P350-04NR3
- NXP Semiconductors
-
1:
¥1,351.5817
-
207库存量
-
寿命结束
|
Mouser 零件编号
841-AFV09P350-04NR3
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 720-960 MHz 100 W AVG. 48 V
|
|
207库存量
|
|
|
¥1,351.5817
|
|
|
¥1,146.611
|
|
|
¥1,090.2014
|
|
|
¥1,063.9741
|
|
|
¥980.6818
|
|
|
¥980.6818
|
|
最低: 1
倍数: 1
:
250
|
|
|
N-Channel
|
Si
|
|
105 V
|
720 MHz to 960 MHz
|
19.2 dB
|
100 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-780-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
- MRF1K50NR5
- NXP Semiconductors
-
1:
¥3,054.1414
-
39库存量
-
寿命结束
|
Mouser 零件编号
841-MRF1K50NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
|
|
39库存量
|
|
|
¥3,054.1414
|
|
|
¥2,681.9872
|
|
|
¥2,576.0271
|
|
|
¥2,508.1028
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
36 A
|
133 V
|
1.8 MHz to 500 MHz
|
23 dB
|
1.5 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-1230-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
- MRFX1K80HR5
- NXP Semiconductors
-
1:
¥3,646.736
-
111库存量
-
250预期 2026/6/22
-
寿命结束
|
Mouser 零件编号
771-MRFX1K80HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
|
|
111库存量
250预期 2026/6/22
|
|
|
¥3,646.736
|
|
|
¥3,160.6213
|
|
|
¥3,039.2028
|
|
|
¥2,965.9901
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
43 A
|
179 V
|
1.8 MHz to 400 MHz
|
25.1 dB
|
1.8 kW
|
- 40 C
|
+ 150 C
|
Screw Mount
|
NI-1230H-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
- MRF1K50HR5
- NXP Semiconductors
-
1:
¥3,558.0536
-
72库存量
-
寿命结束
|
Mouser 零件编号
841-MRF1K50HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
|
|
72库存量
|
|
|
¥3,558.0536
|
|
|
¥3,081.849
|
|
|
¥2,963.0295
|
|
|
¥2,891.2971
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
36 A
|
135 V
|
1.8 MHz to 500 MHz
|
23.7 dB
|
1.5 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
NI-1230H-4S
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
- MRFE6VP6300HR5
- NXP Semiconductors
-
1:
¥2,924.6547
-
282库存量
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP6300HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
|
|
282库存量
|
|
|
¥2,924.6547
|
|
|
¥2,809.2139
|
|
|
¥2,809.1348
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
|
130 V
|
1.8 MHz to 600 MHz
|
26.5 dB
|
300 W
|
|
+ 150 C
|
Screw Mount
|
NI-780-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
NXP Semiconductors MHT1803B
- MHT1803B
- NXP Semiconductors
-
1:
¥343.6669
-
302库存量
-
寿命结束
|
Mouser 零件编号
771-MHT1803B
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
|
|
302库存量
|
|
|
¥343.6669
|
|
|
¥279.2343
|
|
|
¥262.1261
|
|
|
¥257.6061
|
|
|
查看
|
|
|
¥240.8369
|
|
|
¥237.8763
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
300 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101BN
- NXP Semiconductors
-
1:
¥339.3277
-
146库存量
-
250预期 2026/6/25
-
寿命结束
|
Mouser 零件编号
771-MRF101BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
146库存量
250预期 2026/6/25
|
|
|
¥339.3277
|
|
|
¥276.1042
|
|
|
¥272.4543
|
|
|
¥250.747
|
|
|
查看
|
|
|
¥242.9274
|
|
|
¥234.6784
|
|
最低: 1
倍数: 1
|
否
|
|
N-Channel
|
Si
|
8.8 A
|
133 V
|
1.8 MHz to 250 MHz
|
21.1 dB
|
115 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-220-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
- MRFX1K80NR5
- NXP Semiconductors
-
1:
¥3,068.5602
-
7库存量
-
50在途量
-
寿命结束
|
Mouser 零件编号
771-MRFX1K80NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
|
|
7库存量
50在途量
|
|
|
¥3,068.5602
|
|
|
¥2,542.6695
|
|
|
¥2,542.6695
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
43 A
|
179 V
|
1.8 MHz to 400 MHz
|
24.4 dB
|
1.8 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-1230-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power
- AFM907NT1
- NXP Semiconductors
-
1:
¥41.2563
-
5,240库存量
-
4,760在途量
-
寿命结束
|
Mouser 零件编号
841-AFM907NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power
|
|
5,240库存量
4,760在途量
|
|
|
¥41.2563
|
|
|
¥31.3575
|
|
|
¥28.8376
|
|
|
¥26.0578
|
|
|
查看
|
|
|
¥23.3684
|
|
|
¥24.747
|
|
|
¥23.9673
|
|
|
¥23.3684
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
136 MHz to 941 MHz
|
15 dB
|
8 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
DFN-16
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥41.5162
-
1,420库存量
-
23,000在途量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS004NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
1,420库存量
23,000在途量
|
|
|
¥41.5162
|
|
|
¥29.0071
|
|
|
¥26.3968
|
|
|
¥25.4476
|
|
|
查看
|
|
|
¥18.9388
|
|
|
¥23.7978
|
|
|
¥21.8881
|
|
|
¥20.1479
|
|
|
¥18.9388
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
4 A
|
30 V
|
136 MHz to 941 MHz
|
20.9 dB
|
4.9 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
SOT-89-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031GNR1
- NXP Semiconductors
-
1:
¥334.819
-
708库存量
-
2,500在途量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
708库存量
2,500在途量
在途量:
1,000 预期 2026/6/23
1,500 预期 2026/6/29
|
|
|
¥334.819
|
|
|
¥272.0136
|
|
|
¥256.2953
|
|
|
¥239.0176
|
|
|
¥231.2884
|
|
|
¥225.8192
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
7.5 A
|
40 V
|
136 MHz to 520 MHz
|
17.7 dB
|
33 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031NR1
- NXP Semiconductors
-
1:
¥200.7219
-
204库存量
-
1,000预期 2026/6/23
-
寿命结束
|
Mouser 零件编号
841-AFT05MS031NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
204库存量
1,000预期 2026/6/23
|
|
|
¥200.7219
|
|
|
¥160.6747
|
|
|
¥149.6459
|
|
|
¥146.6062
|
|
|
查看
|
|
|
¥138.5267
|
|
|
¥142.3461
|
|
|
¥140.0861
|
|
|
¥138.5267
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
7.5 A
|
40 V
|
136 MHz to 520 MHz
|
17.7 dB
|
33 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
- AFT09MS031NR1
- NXP Semiconductors
-
1:
¥169.8051
-
219库存量
-
寿命结束
|
Mouser 零件编号
841-AFT09MS031NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
|
|
219库存量
|
|
|
¥169.8051
|
|
|
¥135.4079
|
|
|
¥126.7973
|
|
|
¥123.1587
|
|
|
¥115.0001
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
10 A
|
40 V
|
764 MHz to 941 MHz
|
15.7 dB
|
32 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
- MRFE6S9060NR1
- NXP Semiconductors
-
1:
¥850.6301
-
191库存量
-
寿命结束
|
Mouser 零件编号
841-MRFE6S9060NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
|
|
191库存量
|
|
|
¥850.6301
|
|
|
¥710.0129
|
|
|
¥674.9264
|
|
|
¥661.9879
|
|
|
查看
|
|
|
¥606.8326
|
|
|
¥634.9809
|
|
|
¥634.721
|
|
|
¥606.8326
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
1.5 A
|
66 V
|
1 GHz
|
21.1 dB
|
14 W
|
|
+ 150 C
|
Screw Mount
|
TO-270
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
NXP Semiconductors AFT27S006NT1
- AFT27S006NT1
- NXP Semiconductors
-
1:
¥162.7652
-
248库存量
-
1,000在途量
-
寿命结束
|
Mouser 零件编号
841-AFT27S006NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
|
|
248库存量
1,000在途量
|
|
|
¥162.7652
|
|
|
¥129.6675
|
|
|
¥121.4185
|
|
|
¥117.5991
|
|
|
查看
|
|
|
¥112.4689
|
|
|
¥117.1697
|
|
|
¥112.4689
|
|
|
报价
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
|
65 V
|
728 MHz to 3.7 GHz
|
16 dB
|
28.8 dBm
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5W
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
- MRFX035HR5
- NXP Semiconductors
-
1:
¥1,175.4486
-
7库存量
-
寿命结束
|
Mouser 零件编号
771-MRFX035HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
|
|
7库存量
|
|
|
¥1,175.4486
|
|
|
¥915.4243
|
|
|
¥915.4243
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
|
193 V
|
1.8 MHz to 512 MHz
|
24.8 dB
|
35 W
|
- 40 C
|
+ 150 C
|
Screw Mount
|
NI-360H-2SB
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
- AFM906NT1
- NXP Semiconductors
-
1:
¥38.9059
-
147库存量
-
寿命结束
|
Mouser 零件编号
841-AFM906NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
|
|
147库存量
|
|
|
¥38.9059
|
|
|
¥28.928
|
|
|
¥25.3572
|
|
|
¥23.8882
|
|
|
查看
|
|
|
¥17.8088
|
|
|
¥22.5774
|
|
|
¥19.888
|
|
|
¥18.6789
|
|
|
¥17.8088
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
4.7 A
|
30 V
|
136 MHz to 941 MHz
|
16.2 dB
|
6.5 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
HVSON-16
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
- AFT05MP075NR1
- NXP Semiconductors
-
1:
¥539.688
-
8库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MP075NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
|
|
8库存量
|
|
|
¥539.688
|
|
|
¥374.934
|
|
|
¥374.8549
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
136 MHz to 520 MHz
|
18.5 dB
|
70 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-WB-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
- MRF6V10010NR4
- NXP Semiconductors
-
1:
¥1,541.885
-
1库存量
-
寿命结束
|
Mouser 零件编号
841-MRF6V10010NR4
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
|
|
1库存量
|
|
|
¥1,541.885
|
|
|
¥1,307.9072
|
|
|
¥1,246.503
|
|
|
¥1,229.9146
|
|
|
¥1,152.4305
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
N-Channel
|
Si
|
|
100 V
|
960 MHz to 1.4 GHz
|
25 dB
|
10 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101AN
- NXP Semiconductors
-
1:
¥384.1435
-
2,611预期 2026/7/9
-
寿命结束
|
Mouser 零件编号
771-MRF101AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
2,611预期 2026/7/9
|
|
|
¥384.1435
|
|
|
¥315.4395
|
|
|
¥278.2738
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
8.8 A
|
133 V
|
1.8 MHz to 250 MHz
|
21.1 dB
|
115 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-220-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥760.1284
-
480预期 2026/7/9
-
寿命结束
|
Mouser 零件编号
771-MRF300AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
480预期 2026/7/9
|
|
|
¥760.1284
|
|
|
¥637.659
|
|
|
¥567.147
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
- MRFE6VP61K25HR5
- NXP Semiconductors
-
1:
¥3,751.6565
-
150预期 2026/6/23
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP61K25HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
|
|
150预期 2026/6/23
|
|
|
¥3,751.6565
|
|
|
¥3,054.4126
|
|
|
¥3,054.4126
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 600 MHz
|
24 dB
|
1.25 kW
|
|
+ 150 C
|
Screw Mount
|
NI-1230H-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230HS
- MRFE6VP61K25HSR5
- NXP Semiconductors
-
1:
¥3,441.415
-
100预期 2026/6/16
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP61K25HSR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230HS
|
|
100预期 2026/6/16
|
|
|
¥3,441.415
|
|
|
¥2,793.3261
|
|
|
¥2,793.3261
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 600 MHz
|
24 dB
|
1.25 kW
|
|
+ 150 C
|
Screw Mount
|
NI-1230S-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
- MHT1803A
- NXP Semiconductors
-
1:
¥339.4181
-
239预期 2026/10/1
-
寿命结束
|
Mouser 零件编号
771-MHT1803A
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
|
|
239预期 2026/10/1
|
|
|
¥339.4181
|
|
|
¥276.1946
|
|
|
¥257.7756
|
|
|
¥234.1586
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
330 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥91.6317
-
3,980预期 2026/7/9
-
寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
|
|
3,980预期 2026/7/9
|
|
|
¥91.6317
|
|
|
¥65.6643
|
|
|
¥58.6244
|
|
|
¥56.8955
|
|
|
查看
|
|
|
¥45.9458
|
|
|
¥52.3755
|
|
|
¥49.7652
|
|
|
¥47.7651
|
|
|
¥45.9458
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
136 MHz to 941 MHz
|
15.2 dB
|
7.3 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|