结果: 38
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 晶体管极性 技术 Id-连续漏极电流 Vds-漏源极击穿电压 工作频率 增益 输出功率 最小工作温度 最大工作温度 安装风格 封装 / 箱体 封装
NXP Semiconductors AFV09P350-04NR3
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 720-960 MHz 100 W AVG. 48 V 207库存量
最低: 1
倍数: 1
: 250

N-Channel Si 105 V 720 MHz to 960 MHz 19.2 dB 100 W - 40 C + 150 C SMD/SMT OM-780-4 Reel, Cut Tape
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V 39库存量
最低: 1
倍数: 1
: 50

N-Channel Si 36 A 133 V 1.8 MHz to 500 MHz 23 dB 1.5 kW - 40 C + 150 C SMD/SMT OM-1230-4 Reel, Cut Tape
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor 111库存量
250预期 2026/6/22
最低: 1
倍数: 1
: 50

N-Channel Si 43 A 179 V 1.8 MHz to 400 MHz 25.1 dB 1.8 kW - 40 C + 150 C Screw Mount NI-1230H-4 Reel, Cut Tape
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V 72库存量
最低: 1
倍数: 1
: 50

N-Channel Si 36 A 135 V 1.8 MHz to 500 MHz 23.7 dB 1.5 kW - 40 C + 150 C SMD/SMT NI-1230H-4S Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4 282库存量
最低: 1
倍数: 1
: 50

N-Channel Si 130 V 1.8 MHz to 600 MHz 26.5 dB 300 W + 150 C Screw Mount NI-780-4 Reel, Cut Tape, MouseReel
NXP Semiconductors MHT1803B
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L 302库存量
最低: 1
倍数: 1
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 300 W + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V 146库存量
250预期 2026/6/25
最低: 1
倍数: 1
N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz 7库存量
50在途量
最低: 1
倍数: 1
: 50

N-Channel Si 43 A 179 V 1.8 MHz to 400 MHz 24.4 dB 1.8 kW - 40 C + 150 C SMD/SMT OM-1230-4 Reel, Cut Tape
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power 5,240库存量
4,760在途量
最低: 1
倍数: 1
: 1,000

N-Channel Si 3 A 30 V 136 MHz to 941 MHz 15 dB 8 W - 40 C + 150 C SMD/SMT DFN-16 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V 1,420库存量
23,000在途量
最低: 1
倍数: 1
: 1,000

N-Channel Si 4 A 30 V 136 MHz to 941 MHz 20.9 dB 4.9 W - 40 C + 150 C SMD/SMT SOT-89-3 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V 708库存量
2,500在途量
最低: 1
倍数: 1
: 500

N-Channel Si 7.5 A 40 V 136 MHz to 520 MHz 17.7 dB 33 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V 204库存量
1,000预期 2026/6/23
最低: 1
倍数: 1
: 500

N-Channel Si 7.5 A 40 V 136 MHz to 520 MHz 17.7 dB 33 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V 219库存量
最低: 1
倍数: 1
: 500

N-Channel Si 10 A 40 V 764 MHz to 941 MHz 15.7 dB 32 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET 191库存量
最低: 1
倍数: 1
: 500

N-Channel Si 1.5 A 66 V 1 GHz 21.1 dB 14 W + 150 C Screw Mount TO-270 Reel, Cut Tape, MouseReel
NXP Semiconductors AFT27S006NT1
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V 248库存量
1,000在途量
最低: 1
倍数: 1
: 1,000

N-Channel Si 65 V 728 MHz to 3.7 GHz 16 dB 28.8 dBm - 40 C + 150 C SMD/SMT PLD-1.5W Reel, Cut Tape
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V 7库存量
最低: 1
倍数: 1
: 50

N-Channel Si 193 V 1.8 MHz to 512 MHz 24.8 dB 35 W - 40 C + 150 C Screw Mount NI-360H-2SB Reel, Cut Tape
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V 147库存量
最低: 1
倍数: 1
: 1,000

N-Channel Si 4.7 A 30 V 136 MHz to 941 MHz 16.2 dB 6.5 W - 40 C + 150 C SMD/SMT HVSON-16 Reel, Cut Tape
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4 8库存量
最低: 1
倍数: 1
: 500

N-Channel Si 8 A 40 V 136 MHz to 520 MHz 18.5 dB 70 W - 40 C + 150 C SMD/SMT TO-270-WB-4 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5 1库存量
最低: 1
倍数: 1
: 100

N-Channel Si 100 V 960 MHz to 1.4 GHz 25 dB 10 W - 65 C + 150 C Screw Mount PLD-1.5 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
2,611预期 2026/7/9
最低: 1
倍数: 1

N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
480预期 2026/7/9
最低: 1
倍数: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
150预期 2026/6/23
最低: 1
倍数: 1
: 50

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230H-4 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230HS
100预期 2026/6/16
最低: 1
倍数: 1
: 50

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230S-4 Reel, Cut Tape, MouseReel
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
239预期 2026/10/1
最低: 1
倍数: 1
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 330 W + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors 射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
3,980预期 2026/7/9
最低: 1
倍数: 1
: 1,000

N-Channel Si 3 A 30 V 136 MHz to 941 MHz 15.2 dB 7.3 W - 40 C + 150 C SMD/SMT PLD-1.5 Reel, Cut Tape, MouseReel