AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

结果: 34
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ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 495库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 584库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 34A N-CH SIC 758库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 830库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 31A N-CH SIC 51库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 118A 427W SIC 17mOhm TO-247N 360库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET TO247 750V 56A N-CH SIC 814库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 34A N-CH SIC 810库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 650V 70A 262W SIC 30mOhm TO-247N 376库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 43A N-CH SIC 115库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V 95A 427W SIC 22mOhm TO-247N 199库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 31A 165W SIC 80mOhm TO-247N 393库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 24A 134W SIC 105mOhm TO-247N 1,629库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 55A 262W SIC 40mOhm TO-247N 477库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 17A 103W SIC 160mOhm TO-247N 506库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 72A 339W SIC 30mOhm TO-247N 352库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 30A 134W SIC 80mOhm TO-247N 376库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 39A 165W SIC 60mOhm TO-247N 428库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET TO247 750V 56A N-CH SIC 787库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 51A N-CH SIC 2,020库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 51A N-CH SIC 947库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 43A N-CH SIC 493库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 43A N-CH SIC 199库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 43A N-CH SIC 686库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 31A N-CH SIC 1,996库存量
最低: 1
倍数: 1
最大: 100
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement