AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

结果: 34
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格
ROHM Semiconductor 碳化硅MOSFET TO263 1.2KV 24A N-CH SIC 1,201库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 24 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET TO263 1.2KV 24A N-CH SIC 1,488库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7LA N-Channel 1 Channel 1.2 kV 24 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 1.2KV 24A N-CH SIC 750库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 24 A 62 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 81A N-CH SIC 6库存量
450预期 2026/6/18
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 23.4 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 34A N-CH SIC 321库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 85库存量
450预期 2026/6/18
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V 40A 262W SIC 80mOhm TO-247N 117库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 A 80 mOhms - 6 V, + 22 V 1.6 V 106 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 21A 103W SIC 120mOhm TO-247N
450预期 2026/7/23
最低: 1
倍数: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 93A 339W SIC 22mOhm TO-247N 无库存交货期 27 周
最低: 450
倍数: 450

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement AEC-Q101