CoolMOS™ C7功率MOSFET

Infineon CoolMOS™ C7功率MOSFET标志着技术的革命性进步,它实现了低RDS(on)/封装,而且,由于其开关损耗低,故在整个负载范围内提高效率。C7系列优化用于太阳能、服务器、电信和UPS等应用中的硬开关拓扑(如功率因数校正 (CCM PFC)、双晶体管正激 (TTF) 和太阳能升压)。该系列器件具有650V击穿电压,因此适合用于需要额外安全裕度的太阳能和开关模式电源 (SMPS) PFC级。这些器件具有全球最低的RDS(on)。采用TO-247封装的导通电阻为19mΩ,采用TO-220和D2PAK封装的导通电阻为45mΩ。借助C7的快速开关性能,客户可以大于100kHz的开关频率运行器件,并可实现服务器PFC级的钛金级效率。

结果: 78
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET HIGH POWER_NEW 2,774库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 13 A 180 mOhms - 20 V, 20 V 3.5 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,409库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,460库存量
7,500在途量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 13 A 180 mOhms - 20 V, 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 335库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 774库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 6,349库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 10 A 230 mOhms - 20 V, 20 V 4 V 20 nC - 40 C + 150 C 67 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWERNEW 901库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 490库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,662库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 13 A 185 mOhms - 20 V, 20 V 3 V 24 nC - 40 C + 150 C 77 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 815库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 19 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 700V 46A TO247-4 636库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 494库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 2,875库存量
最低: 1
倍数: 1
卷轴: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 12 A 173 mOhms - 20 V, 20 V 3 V 23 nC - 40 C + 150 C 75 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 700V 75A TO247-4 93库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 244库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,244库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 190 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 224库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 115 mOhms - 20 V, 20 V 3.5 V 68 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 221库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 1,702库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 109 A 17 mOhms - 20 V, 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,587库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 35 A 60 mOhms - 20 V, 20 V 1.7 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,418库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 99 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,449库存量
2,000预期 2026/2/26
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 706库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 4 V 64 nC - 55 C + 150 C 171 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,290库存量
最低: 1
倍数: 1
卷轴: 1,000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 13 A 404 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 2,739库存量
最低: 1
倍数: 1
卷轴: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11 A 225 mOhms - 20 V, 20 V 4 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel