|
|
GaN 场效应晶体管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration
- IGI65D1414A3MSXUMA1
- Infineon Technologies
-
1:
¥58.647
-
2,392库存量
-
新产品
|
Mouser 零件编号
726-IGI65D1414A3MSXU
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration
|
|
2,392库存量
|
|
|
¥58.647
|
|
|
¥39.6178
|
|
|
¥29.5269
|
|
|
¥26.7132
|
|
|
¥24.1481
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
QFN-32
|
N-Channel
|
2 Channel
|
650 V
|
|
170 mOhms
|
|
1.6 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
|
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGL65R055D2XUMA1
- Infineon Technologies
-
1:
¥51.4489
-
2,022库存量
-
新产品
|
Mouser 零件编号
726-IGL65R055D2XUMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,022库存量
|
|
|
¥51.4489
|
|
|
¥39.4596
|
|
|
¥31.9338
|
|
|
¥28.3743
|
|
|
¥27.459
|
|
|
¥23.2441
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
22 A
|
70 mOhms
|
- 10 V
|
1.6 V
|
4.7 nC
|
- 55 C
|
+ 150 C
|
111 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGL65R080D2XUMA1
- Infineon Technologies
-
1:
¥42.4315
-
2,304库存量
-
新产品
|
Mouser 零件编号
726-IGL65R080D2XUMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,304库存量
|
|
|
¥42.4315
|
|
|
¥30.4422
|
|
|
¥21.8316
|
|
|
¥21.1762
|
|
|
¥17.289
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
18 A
|
100 mOhms
|
- 10 V
|
1.6 V
|
25 nC
|
- 55 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGL65R110D2XUMA1
- Infineon Technologies
-
1:
¥35.5724
-
2,388库存量
-
新产品
|
Mouser 零件编号
726-IGL65R110D2XUMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,388库存量
|
|
|
¥35.5724
|
|
|
¥23.7413
|
|
|
¥18.2834
|
|
|
¥15.3906
|
|
|
¥12.5769
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
16 A
|
140 mOhms
|
- 10 V
|
1.6 V
|
2.4 nC
|
- 55 C
|
+ 150 C
|
59 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGL65R140D2XUMA1
- Infineon Technologies
-
1:
¥30.849
-
2,263库存量
-
新产品
|
Mouser 零件编号
726-IGL65R140D2XUMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,263库存量
|
|
|
¥30.849
|
|
|
¥20.1818
|
|
|
¥14.1476
|
|
|
¥12.4865
|
|
|
¥10.17
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
HEMT
|
1 Channel
|
650 V
|
13 A
|
170 mOhms
|
- 10 V
|
1.6 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGLD65R055D2AUMA1
- Infineon Technologies
-
1:
¥56.0028
-
2,535库存量
-
新产品
|
Mouser 零件编号
726-IGLD65R055D2AUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,535库存量
|
|
|
¥56.0028
|
|
|
¥40.9399
|
|
|
¥33.0864
|
|
|
¥29.4478
|
|
|
¥25.2329
|
|
|
¥25.2329
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
20 A
|
70 mOhms
|
- 10 V
|
1.2 V
|
4.7 nC
|
- 55 C
|
+ 150 C
|
91 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGLD65R080D2AUMA1
- Infineon Technologies
-
1:
¥43.2564
-
2,832库存量
-
新产品
|
Mouser 零件编号
726-IGLD65R080D2AUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,832库存量
|
|
|
¥43.2564
|
|
|
¥31.4366
|
|
|
¥22.5774
|
|
|
¥22.0011
|
|
|
¥20.8485
|
|
|
¥17.9444
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
18 A
|
100 mOhms
|
- 10 V
|
1.2 V
|
3.3 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGLD65R110D2AUMA1
- Infineon Technologies
-
1:
¥36.8945
-
2,696库存量
-
新产品
|
Mouser 零件编号
726-IGLD65R110D2AUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,696库存量
|
|
|
¥36.8945
|
|
|
¥24.6453
|
|
|
¥18.9388
|
|
|
¥16.7918
|
|
|
¥13.56
|
|
|
查看
|
|
|
¥15.9669
|
|
|
¥13.4809
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
20 A
|
140 mOhms
|
- 10 V
|
1.2 V
|
2.4 nC
|
- 55 C
|
+ 150 C
|
51 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGLD65R140D2AUMA1
- Infineon Technologies
-
1:
¥31.7643
-
2,787库存量
-
新产品
|
Mouser 零件编号
726-IGLD65R140D2AUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,787库存量
|
|
|
¥31.7643
|
|
|
¥20.8485
|
|
|
¥14.6448
|
|
|
¥12.9837
|
|
|
¥10.5881
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-LSON-8
|
HEMT
|
1 Channel
|
650 V
|
12 A
|
170 mOhms
|
- 10 V
|
1.2 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGT65R025D2ATMA1
- Infineon Technologies
-
1:
¥96.9427
-
1,499库存量
-
2,000预期 2026/4/2
-
新产品
|
Mouser 零件编号
726-IGT65R025D2ATMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
1,499库存量
2,000预期 2026/4/2
|
|
|
¥96.9427
|
|
|
¥78.9079
|
|
|
¥65.7547
|
|
|
¥58.647
|
|
|
¥55.1666
|
|
|
¥46.8159
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
70 A
|
30 mOhms
|
- 10 V
|
1.6 V
|
11 nC
|
- 55 C
|
+ 150 C
|
236 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGT65R035D2ATMA1
- Infineon Technologies
-
1:
¥82.716
-
2,000库存量
-
2,000预期 2026/2/16
-
新产品
|
Mouser 零件编号
726-IGT65R035D2ATMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
2,000库存量
2,000预期 2026/2/16
|
|
|
¥82.716
|
|
|
¥62.7037
|
|
|
¥52.2738
|
|
|
¥46.5673
|
|
|
¥41.4371
|
|
|
¥41.4371
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
49 A
|
42 mOhms
|
- 10 V
|
1.6 V
|
7.7 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGT65R045D2ATMA1
- Infineon Technologies
-
1:
¥66.3423
-
1,872库存量
-
新产品
|
Mouser 零件编号
726-IGT65R045D2ATMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
1,872库存量
|
|
|
¥66.3423
|
|
|
¥46.8159
|
|
|
¥38.9624
|
|
|
¥34.7362
|
|
|
¥30.9394
|
|
|
¥30.9394
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
38 A
|
54 mOhms
|
- 10 V
|
1.6 V
|
6 nC
|
- 55 C
|
+ 150 C
|
131 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGT65R055D2ATMA1
- Infineon Technologies
-
1:
¥52.5224
-
1,503库存量
-
新产品
|
Mouser 零件编号
726-IGT65R055D2ATMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
1,503库存量
|
|
|
¥52.5224
|
|
|
¥40.2054
|
|
|
¥32.5101
|
|
|
¥28.9506
|
|
|
¥28.0353
|
|
|
¥23.7413
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
31 A
|
66 mOhms
|
- 10 V
|
1.6 V
|
4.7 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
- IGT65R140D2ATMA1
- Infineon Technologies
-
1:
¥31.3462
-
1,631库存量
-
新产品
|
Mouser 零件编号
726-IGT65R140D2ATMA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 650 V G5
|
|
1,631库存量
|
|
|
¥31.3462
|
|
|
¥20.5095
|
|
|
¥14.3962
|
|
|
¥12.7351
|
|
|
¥10.3395
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PG-HSOF-8
|
HEMT
|
1 Channel
|
650 V
|
13 A
|
170 mOhms
|
- 10 V
|
1.6 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
CoolGaN
|
|
