结果: 40
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装

IXYS MOSFET High Voltage Power MOSFET 248库存量
¥132.2665
¥74.9416
¥74.5235
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 6 Ohms 30 V 5 V 44.5 nC - 55 C + 150 C 110 W Enhancement Tube
IXYS MOSFET 6 Amps 1200V 2.700 Rds 274库存量
¥143.4309
¥82.7951
最低: 1
倍数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 6 A 2.6 Ohms 20 V 5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET 0.75 Amps 1000V 15 Rds 549库存量
¥38.5443
¥19.8541
¥17.9444
¥14.7239
¥14.6448
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube

IXYS MOSFET 1 157库存量
¥193.23
¥141.363
¥134.1649
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 16 A 950 mOhms 30 V 3.5 V 120 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFET TO268 1.5KV 12A N-CH HIVOLT 261库存量
¥583.3964
¥460.3959
¥447.4913
最低: 1
倍数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.5 kV 12 A 2.2 Ohms 30 V 2.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 165库存量
¥106.7059
¥70.06
¥65.0202
¥57.7317
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 4 A 6 Ohms 30 V 2.5 V 44.5 nC - 55 C + 150 C 280 W Enhancement Tube

IXYS MOSFET 3 Amps 1200V 4.500 Rds 211库存量
90预期 2026/12/15
¥98.2648
¥63.28
¥58.3193
¥51.7766
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 4.5 V 39 nC - 55 C + 150 C 150 W Enhancement Tube
IXYS MOSFET 0.5 Amps 1000V 300库存量
¥49.7087
¥26.1369
¥22.9164
¥20.5999
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 700 mA 15 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 25 W Enhancement Tube
IXYS MOSFET High Voltage Power MOSFET 2,247库存量
¥56.9859
¥30.3518
¥30.2727
¥27.7076
¥24.6453
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 2.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube
IXYS MOSFET TO263 1.5KV 3A N-CH HIVOLT 192库存量
300预期 2027/1/25
¥131.6789
¥76.6818
¥71.1335
¥69.8114
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube
IXYS MOSFET MOSFET Id3 BVdass1200 629库存量
¥88.9197
¥55.0084
¥50.7822
¥46.6464
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube
IXYS MOSFET 1500V High Voltage Power MOSFET 310库存量
¥174.9466
¥106.785
最低: 1
倍数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 12 A 2 Ohms 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube

IXYS MOSFET 1500 V High Voltage Power MOSFET 295库存量
300预期 2027/3/23
¥286.7714
¥209.4342
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 20 A 1 Ohms 30 V 4.5 V 215 nC - 55 C + 150 C 1.25 kW Enhancement Tube
IXYS MOSFET TO263 1.2KV 3A N-CH HIVOLT 14库存量
350预期 2027/2/9
¥92.886
¥53.0987
¥48.9629
¥45.1661
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube
IXYS MOSFET TO263 150V 4A N-CH HIVOLT 83库存量
¥134.0858
¥77.5858
¥75.8456
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 4 A 6 Ohms 30 V 2.5 V 375 nC - 55 C + 150 C 280 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 8库存量
¥153.5218
¥87.8462
¥82.716
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube

IXYS MOSFET 6 Amps 1200V 2.700 Rds 96库存量
¥82.7951
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.4 Ohms 20 V 2.5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET 0.1 Amps 1000V 80 Rds 300库存量
¥34.4085
¥17.9444
¥16.1251
¥13.8086
¥13.7295
最低: 1
倍数: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 100 mA 80 Ohms 20 V - 55 C + 150 C 25 W Enhancement Tube
IXYS MOSFET 3 Amps 1200V 4.5 Rds 962库存量
1,550预期 2027/3/2
¥84.863
¥51.4489
¥47.3922
¥46.6464
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 150 W Enhancement Tube

IXYS MOSFET >1200V High Voltage Power MOSFET
285预期 2026/10/26
¥179.5796
¥121.4298
¥104.9657
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 12 A 2 Ohms 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube
IXYS MOSFET 0.75 Amps 1000V 15 Rds 800工厂有库存
¥26.1369
最低: 300
倍数: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube

IXYS MOSFET HIGH VOLT PWR MOSFET 1500V 6A 无库存交货期 32 周
¥139.1256
¥91.0667
¥74.5235
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 6 A 3.5 Ohms 20 V 5 V 67 nC - 55 C + 150 C 540 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 无库存交货期 24 周
¥99.0897
¥97.9371
最低: 300
倍数: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 3.85 Ohms 30 V 2.5 V 67 nC - 55 C + 150 C 125 W Enhancement Tube
IXYS MOSFET 1200V High Voltage Power MOSFET 无库存交货期 24 周
¥543.2814
¥471.9784
¥415.4784
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1.5 kV 20 A 1 Ohms Tube
IXYS MOSFET 2 Amps 800V 6.2 Rds 无库存
¥22.7469
¥16.8709
¥14.1476
¥13.1532
¥12.3283
最低: 50
倍数: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 2 A 6.2 Ohms 20 V - 55 C + 150 C 54 W Enhancement Tube