|
|
GaN 场效应晶体管 650V, 11A, N-Channel GaN FET
- CDF56G6511N TR13 PBFREE
- Central Semiconductor
-
1:
¥51.0308
-
2,102库存量
|
Mouser 零件编号
610-CDF56G6511NTR13P
|
Central Semiconductor
|
GaN 场效应晶体管 650V, 11A, N-Channel GaN FET
|
|
2,102库存量
|
|
|
¥51.0308
|
|
|
¥34.0808
|
|
|
¥24.4871
|
|
|
¥22.1706
|
|
|
¥21.3457
|
|
|
¥18.0348
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 650V, 17A, N-Channel GaN FET
- CDF56G6517N TR13 PBFREE
- Central Semiconductor
-
1:
¥46.8159
-
2,438库存量
|
Mouser 零件编号
610-CDF56G6517NTR13P
|
Central Semiconductor
|
GaN 场效应晶体管 650V, 17A, N-Channel GaN FET
|
|
2,438库存量
|
|
|
¥46.8159
|
|
|
¥36.0696
|
|
|
¥26.216
|
|
|
¥25.4815
|
|
|
¥21.3457
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
- EPC2040
- EPC
-
1:
¥15.5488
-
530库存量
-
12,500预期 2026/6/24
-
Mouser 的新产品
|
Mouser 零件编号
65-EPC2040
Mouser 的新产品
|
EPC
|
GaN 场效应晶体管 EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
|
|
530库存量
12,500预期 2026/6/24
|
|
|
¥15.5488
|
|
|
¥9.9214
|
|
|
¥6.6105
|
|
|
¥5.2206
|
|
|
¥4.2827
|
|
|
查看
|
|
|
¥4.7686
|
|
|
¥3.8307
|
|
|
¥3.616
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 LOW SIDE DRIVERS
- 1EDN7136GXTMA1
- Infineon Technologies
-
1:
¥6.3732
-
3,172库存量
|
Mouser 零件编号
726-1EDN7136GXTMA1
|
Infineon Technologies
|
栅极驱动器 LOW SIDE DRIVERS
|
|
3,172库存量
|
|
|
¥6.3732
|
|
|
¥4.4748
|
|
|
¥4.0115
|
|
|
¥3.503
|
|
|
查看
|
|
|
¥2.7911
|
|
|
¥3.2544
|
|
|
¥3.1188
|
|
|
¥2.9945
|
|
|
¥2.8702
|
|
|
¥2.7911
|
|
最低: 1
倍数: 1
:
4,000
|
|
|
|
|
栅极驱动器 LOW SIDE DRIVERS
- 2EDN7524RXTMA1
- Infineon Technologies
-
1:
¥10.0909
-
2,648库存量
|
Mouser 零件编号
726-2EDN7524RXTMA1
|
Infineon Technologies
|
栅极驱动器 LOW SIDE DRIVERS
|
|
2,648库存量
|
|
|
¥10.0909
|
|
|
¥7.2659
|
|
|
¥6.5427
|
|
|
¥5.7517
|
|
|
查看
|
|
|
¥4.6443
|
|
|
¥5.3788
|
|
|
¥5.1528
|
|
|
¥4.9833
|
|
|
¥4.7686
|
|
|
¥4.6443
|
|
最低: 1
倍数: 1
:
5,000
|
|
|
|
|
栅极驱动器 LOW SIDE DRIVERS
- 2EDN8524RXTMA1
- Infineon Technologies
-
1:
¥9.0174
-
2,077库存量
-
5,000预期 2026/7/2
|
Mouser 零件编号
726-2EDN8524RXTMA1
|
Infineon Technologies
|
栅极驱动器 LOW SIDE DRIVERS
|
|
2,077库存量
5,000预期 2026/7/2
|
|
|
¥9.0174
|
|
|
¥6.4975
|
|
|
¥5.876
|
|
|
¥5.1867
|
|
|
查看
|
|
|
¥4.2149
|
|
|
¥4.859
|
|
|
¥4.6556
|
|
|
¥4.5426
|
|
|
¥4.4296
|
|
|
¥4.2149
|
|
最低: 1
倍数: 1
:
5,000
|
|
|
|
|
交流/直流转换器 65 W (85-265 VAC)
- INN3678C-H606-TL
- Power Integrations
-
1:
¥25.3911
-
672库存量
|
Mouser 零件编号
869-INN3678C-H606-TL
|
Power Integrations
|
交流/直流转换器 65 W (85-265 VAC)
|
|
672库存量
|
|
|
¥25.3911
|
|
|
¥24.1481
|
|
|
¥22.6678
|
|
|
¥19.3569
|
|
|
¥16.3737
|
|
|
查看
|
|
|
¥18.7806
|
|
|
¥18.6111
|
|
|
¥16.7127
|
|
|
¥16.2155
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 25 Watt
- CG2H40025F
- MACOM
-
1:
¥2,166.3456
-
5库存量
-
1,200在途量
|
Mouser 零件编号
941-CG2H40025F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 25 Watt
|
|
5库存量
1,200在途量
在途量:
320 预期 2026/7/31
880 预期 2026/10/16
|
|
|
¥2,166.3456
|
|
|
¥1,829.357
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 6 Watt
- CGH40006S
- MACOM
-
1:
¥495.7197
-
5库存量
-
1,200预期 2026/8/14
|
Mouser 零件编号
941-CGH40006S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 6 Watt
|
|
5库存量
1,200预期 2026/8/14
|
|
|
¥495.7197
|
|
|
¥411.3426
|
|
|
¥366.8432
|
|
|
¥366.8432
|
|
最低: 1
倍数: 1
:
200
|
|
|
|
|
GaN 场效应晶体管 GANB8R0-040CBA/SOT8087/WLCSP16
- GANB8R0-040CBAZ
- Nexperia
-
1:
¥20.1027
-
1库存量
-
2,500预期 2026/6/22
-
新产品
|
Mouser 零件编号
771-GANB8R0-040CBAZ
新产品
|
Nexperia
|
GaN 场效应晶体管 GANB8R0-040CBA/SOT8087/WLCSP16
|
|
1库存量
2,500预期 2026/6/22
|
|
|
¥20.1027
|
|
|
¥12.9046
|
|
|
¥8.7688
|
|
|
¥6.9947
|
|
|
¥5.8195
|
|
|
查看
|
|
|
¥6.4297
|
|
|
¥5.2432
|
|
|
¥5.1754
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 1.5-A 3-A 200-V ha l f bridge gate drive A 595-LMG1210RVRT
- LMG1210RVRR
- Texas Instruments
-
1:
¥39.6065
-
17,986预期 2026/10/5
|
Mouser 零件编号
595-LMG1210RVRR
|
Texas Instruments
|
栅极驱动器 1.5-A 3-A 200-V ha l f bridge gate drive A 595-LMG1210RVRT
|
|
17,986预期 2026/10/5
|
|
|
¥39.6065
|
|
|
¥30.1371
|
|
|
¥27.7076
|
|
|
¥25.0973
|
|
|
¥25.0973
|
|
最低: 1
倍数: 1
最大: 170
:
3,000
|
|
|
|
|
GaN 场效应晶体管 EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9
- EPC2012C
- EPC
-
1:
¥32.8378
-
12,490预期 2026/7/6
-
Mouser 的新产品
|
Mouser 零件编号
65-EPC2012C
Mouser 的新产品
|
EPC
|
GaN 场效应晶体管 EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9
|
|
12,490预期 2026/7/6
|
|
|
¥32.8378
|
|
|
¥21.5943
|
|
|
¥15.142
|
|
|
¥12.4074
|
|
|
¥10.4186
|
|
|
¥10.0909
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
- EPC2305
- EPC
-
1:
¥72.8737
-
14,992预期 2026/7/31
-
Mouser 的新产品
|
Mouser 零件编号
65-EPC2305
Mouser 的新产品
|
EPC
|
GaN 场效应晶体管 EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
|
|
14,992预期 2026/7/31
|
|
|
¥72.8737
|
|
|
¥49.7087
|
|
|
¥36.5555
|
|
|
¥36.1487
|
|
|
¥31.5948
|
|
|
¥29.4478
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 HV GAN DISCRETES
- IGLT65R035D2ATMA1
- Infineon Technologies
-
1:
¥88.5016
-
3,538在途量
-
新产品
|
Mouser 零件编号
726-IGLT65R035D2ATMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 HV GAN DISCRETES
|
|
3,538在途量
在途量:
1,738 预期 2026/7/2
1,800 预期 2026/7/9
|
|
|
¥88.5016
|
|
|
¥59.7205
|
|
|
¥46.6464
|
|
|
¥38.1375
|
|
|
¥38.0471
|
|
最低: 1
倍数: 1
:
1,800
|
|
|
|
|
GaN 场效应晶体管 DC-6GHz 35W 50V GaN Transistor
- QPD0020TR7
- Qorvo
-
1:
¥649.9195
-
500预期 2026/9/11
|
Mouser 零件编号
772-QPD0020TR7
|
Qorvo
|
GaN 场效应晶体管 DC-6GHz 35W 50V GaN Transistor
|
|
500预期 2026/9/11
|
|
|
¥649.9195
|
|
|
¥643.3994
|
|
|
¥505.3021
|
|
|
¥398.6527
|
|
|
¥356.0065
|
|
|
¥342.4578
|
|
最低: 1
倍数: 1
:
500
|
|
|
|
|
GaN 场效应晶体管 DC-3.7GHz 65W 50V SSG 20dB GaN
- QPD1015L
- Qorvo
-
1:
¥2,703.0052
-
75预期 2026/7/27
|
Mouser 零件编号
772-QPD1015L
|
Qorvo
|
GaN 场效应晶体管 DC-3.7GHz 65W 50V SSG 20dB GaN
|
|
75预期 2026/7/27
|
|
|
¥2,703.0052
|
|
|
¥2,675.8965
|
|
|
¥2,051.6167
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 8-12GHz 5W GaN PAE 50% Gain 13dB
- TGF2977-SM
- Qorvo
-
1:
¥330.2199
-
1,550预期 2026/8/19
|
Mouser 零件编号
772-TGF2977-SM
|
Qorvo
|
GaN 场效应晶体管 8-12GHz 5W GaN PAE 50% Gain 13dB
|
|
1,550预期 2026/8/19
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
- TGF3015-SM
- Qorvo
-
1:
¥755.8683
-
355预期 2026/7/27
|
Mouser 零件编号
772-TGF3015-SM
|
Qorvo
|
GaN 场效应晶体管 .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
|
|
355预期 2026/7/27
|
|
|
¥755.8683
|
|
|
¥748.2295
|
|
|
¥592.4251
|
|
|
¥486.1938
|
|
最低: 1
倍数: 1
|
|
|
|
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
- NCP58921MNTWG
- onsemi
-
1:
¥162.6748
-
2,975预期 2026/8/10
-
新产品
|
Mouser 零件编号
863-NCP58921MNTWG
新产品
|
onsemi
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
|
|
2,975预期 2026/8/10
|
|
|
¥162.6748
|
|
|
¥116.2883
|
|
|
¥115.599
|
|
|
¥101.2706
|
|
|
¥89.5412
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
- NCP58922MNTWG
- onsemi
-
1:
¥106.3895
-
3,000预期 2026/7/10
-
新产品
|
Mouser 零件编号
863-NCP58922MNTWG
新产品
|
onsemi
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
|
|
3,000预期 2026/7/10
|
|
|
¥106.3895
|
|
|
¥75.1337
|
|
|
¥74.0828
|
|
|
¥64.3535
|
|
|
¥63.8337
|
|
|
¥54.7259
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-18GHz, 6 Watt
- CGHV1F006S
- MACOM
-
1:
¥744.8621
-
750预期 2026/9/15
|
Mouser 零件编号
941-CGHV1F006S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-18GHz, 6 Watt
|
|
750预期 2026/9/15
|
|
|
¥744.8621
|
|
|
¥597.6231
|
|
|
¥540.9649
|
|
|
¥540.9649
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 30 Watt
- CGHV40030F
- MACOM
-
1:
¥2,217.6702
-
244预期 2026/12/8
|
Mouser 零件编号
941-CGHV40030F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 30 Watt
|
|
244预期 2026/12/8
|
|
|
¥2,217.6702
|
|
|
¥1,872.6134
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
栅极驱动器 80V GaN Half Bridge Power Stage A 595-LM A 595-LMG5200MOFR
- LMG5200MOFT
- Texas Instruments
-
1:
¥144.6739
-
411预期 2026/10/5
|
Mouser 零件编号
595-LMG5200MOFT
|
Texas Instruments
|
栅极驱动器 80V GaN Half Bridge Power Stage A 595-LM A 595-LMG5200MOFR
|
|
411预期 2026/10/5
|
|
|
¥144.6739
|
|
|
¥114.8871
|
|
|
¥107.4517
|
|
|
¥107.4517
|
|
最低: 1
倍数: 1
最大: 30
:
250
|
|
|
|
|
电流隔离式栅极驱动器 5.7kVrms 4A/6A dual- channel isolated ga A 595-UCC21540ADWK
- UCC21540ADWKR
- Texas Instruments
-
1:
¥17.8879
-
4,000预期 2026/7/9
|
Mouser 零件编号
595-UCC21540ADWKR
|
Texas Instruments
|
电流隔离式栅极驱动器 5.7kVrms 4A/6A dual- channel isolated ga A 595-UCC21540ADWK
|
|
4,000预期 2026/7/9
|
|
|
¥17.8879
|
|
|
¥13.1984
|
|
|
¥12.0684
|
|
|
¥10.7689
|
|
|
¥8.7688
|
|
|
查看
|
|
|
¥10.1587
|
|
|
¥9.8197
|
|
|
¥9.5598
|
|
|
¥8.6897
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
GaN 场效应晶体管 650V, 150mohm GaN FET in TO220
- TP65H150G4PS
- Renesas Electronics
-
1:
¥40.5331
-
1,938预期 2026/7/7
|
Mouser 零件编号
227-TP65H150G4PS
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 150mohm GaN FET in TO220
|
|
1,938预期 2026/7/7
|
|
|
¥40.5331
|
|
|
¥20.9276
|
|
|
¥19.0292
|
|
|
¥15.7183
|
|
|
查看
|
|
|
¥14.5544
|
|
|
¥13.6504
|
|
|
¥13.4018
|
|
最低: 1
倍数: 1
|
|
|