|
|
GaN 场效应晶体管 EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2203
- EPC
-
1:
¥13.0741
-
12,500预期 2026/7/1
-
Mouser 的新产品
|
Mouser 零件编号
65-EPC2203
Mouser 的新产品
|
EPC
|
GaN 场效应晶体管 EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
|
|
12,500预期 2026/7/1
|
|
|
¥13.0741
|
|
|
¥8.2264
|
|
|
¥5.4805
|
|
|
¥4.2827
|
|
|
¥3.4917
|
|
|
查看
|
|
|
¥3.9098
|
|
|
¥3.1075
|
|
|
¥2.8702
|
|
|
¥2.8363
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
- IGK080B041SXTSA1
- Infineon Technologies
-
1:
¥7.5258
-
3,995预期 2026/10/15
-
新产品
|
Mouser 零件编号
726-IGK080B041SXTSA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
|
|
3,995预期 2026/10/15
|
|
|
¥7.5258
|
|
|
¥4.8816
|
|
|
¥4.0115
|
|
|
¥3.842
|
|
|
¥3.3787
|
|
|
查看
|
|
|
¥3.7064
|
|
|
¥3.1301
|
|
最低: 1
倍数: 1
:
4,000
|
|
|
|
|
GaN 场效应晶体管 HEMT POWER STAGE IC
- BM3G115MUV-LBE2
- ROHM Semiconductor
-
1:
¥78.0039
-
1,000在途量
-
新产品
|
Mouser 零件编号
755-BM3G115MUV-LBE2
新产品
|
ROHM Semiconductor
|
GaN 场效应晶体管 HEMT POWER STAGE IC
|
|
1,000在途量
|
|
|
¥78.0039
|
|
|
¥56.3305
|
|
|
¥50.624
|
|
|
¥44.4203
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
GaN 场效应晶体管 DC-3.2GHz 120W 50V SSG 17.5dB GaN
- QPD1008
- Qorvo
-
1:
¥2,825.2938
-
19预期 2026/7/27
|
Mouser 零件编号
772-QPD1008
|
Qorvo
|
GaN 场效应晶体管 DC-3.2GHz 120W 50V SSG 17.5dB GaN
|
|
19预期 2026/7/27
|
|
|
¥2,825.2938
|
|
|
¥2,796.976
|
|
|
¥2,144.2767
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频放大器 .03-2.5GHz 10W GaN Sm Sig. Gain 19dB
- TGA2237
- Qorvo
-
25:
¥1,175.1887
-
50预期 2026/8/3
|
Mouser 零件编号
772-TGA2237
|
Qorvo
|
射频放大器 .03-2.5GHz 10W GaN Sm Sig. Gain 19dB
|
|
50预期 2026/8/3
|
|
最低: 25
倍数: 25
|
|
|
|
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
- NCP58920MNTWG
- onsemi
-
1:
¥78.8627
-
2,975预期 2026/7/10
-
新产品
|
Mouser 零件编号
863-NCP58920MNTWG
新产品
|
onsemi
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
|
|
2,975预期 2026/7/10
|
|
|
¥78.8627
|
|
|
¥54.0253
|
|
|
¥43.8666
|
|
|
¥43.0869
|
|
|
¥37.3465
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
交流/直流转换器 65 W (85-265 VAC)
- INN3678C-H605-TL
- Power Integrations
-
1:
¥25.3911
-
6,000在途量
|
Mouser 零件编号
869-INN3678C-H605-TL
|
Power Integrations
|
交流/直流转换器 65 W (85-265 VAC)
|
|
6,000在途量
在途量:
2,000 预期 2026/9/1
4,000 预期 2026/9/10
|
|
|
¥25.3911
|
|
|
¥23.4927
|
|
|
¥22.4192
|
|
|
¥19.3569
|
|
|
查看
|
|
|
¥16.2946
|
|
|
¥18.7806
|
|
|
¥18.6111
|
|
|
¥16.7127
|
|
|
¥16.2946
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
射频放大器 Point-to-Point Radio and WiMAX GaN based High Power Amplifiers
- MGA-445940-02
- CML Micro
-
1:
¥1,746.5054
-
40在途量
|
Mouser 零件编号
938-MGA-445940-02
|
CML Micro
|
射频放大器 Point-to-Point Radio and WiMAX GaN based High Power Amplifiers
|
|
40在途量
在途量:
20 预期 2026/8/4
20 预期 2026/8/18
|
|
|
¥1,746.5054
|
|
|
¥1,746.5054
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
10
|
|
|
|
|
GaN 场效应晶体管 10W, 4.0GHz, 830120P, GaN HEMT, PILL
- CGH40010P
- MACOM
-
1:
¥958.6694
-
117预期 2026/11/17
|
Mouser 零件编号
941-CGH40010P
|
MACOM
|
GaN 场效应晶体管 10W, 4.0GHz, 830120P, GaN HEMT, PILL
|
|
117预期 2026/11/17
|
|
|
¥958.6694
|
|
|
¥797.4749
|
|
|
¥782.8753
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 15 Watt
- CGHV27015S
- MACOM
-
1:
¥551.9485
-
120预期 2026/7/20
|
Mouser 零件编号
941-CGHV27015S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 15 Watt
|
|
120预期 2026/7/20
|
|
|
¥551.9485
|
|
|
¥479.5155
|
|
|
¥419.3995
|
|
|
¥419.3995
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
- MASTERGAN5
- STMicroelectronics
-
1:
¥61.5398
-
62库存量
|
Mouser 零件编号
511-MASTERGAN5
|
STMicroelectronics
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
|
|
62库存量
|
|
|
¥61.5398
|
|
|
¥47.5617
|
|
|
¥44.0022
|
|
|
¥38.2957
|
|
|
查看
|
|
|
¥37.1431
|
|
|
¥36.2278
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频放大器 6-12GHz PAE 31% GaN Gain 21dB IL 9dB
Qorvo TGA2598
- TGA2598
- Qorvo
-
50:
¥394.8333
-
100预期 2026/8/3
|
Mouser 零件编号
772-TGA2598
|
Qorvo
|
射频放大器 6-12GHz PAE 31% GaN Gain 21dB IL 9dB
|
|
100预期 2026/8/3
|
|
|
¥394.8333
|
|
|
¥392.8219
|
|
最低: 50
倍数: 50
|
|
|
|
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG210QTR
- STMicroelectronics
-
1:
¥22.7469
-
700在途量
-
新产品
|
Mouser 零件编号
511-STDRIVEG210QTR
新产品
|
STMicroelectronics
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
700在途量
|
|
|
¥22.7469
|
|
|
¥16.9613
|
|
|
¥15.4697
|
|
|
¥13.899
|
|
|
查看
|
|
|
¥11.8311
|
|
|
¥13.1532
|
|
|
¥12.8255
|
|
|
¥11.8311
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG211QTR
- STMicroelectronics
-
1:
¥22.7469
-
700在途量
-
新产品
|
Mouser 零件编号
511-STDRIVEG211QTR
新产品
|
STMicroelectronics
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
700在途量
|
|
|
¥22.7469
|
|
|
¥16.9613
|
|
|
¥15.4697
|
|
|
¥13.899
|
|
|
查看
|
|
|
¥11.8311
|
|
|
¥13.1532
|
|
|
¥12.8255
|
|
|
¥11.8311
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
- GS-065-018-2-L-MR
- Infineon Technologies
-
1:
¥77.0095
-
205预期 2026/6/23
-
寿命结束
|
Mouser 零件编号
499-GS-065-018-2-LMR
寿命结束
|
Infineon Technologies
|
GaN 场效应晶体管 LEGACY GAN SYSTEMS
|
|
205预期 2026/6/23
|
|
|
¥77.0095
|
|
|
¥50.8726
|
|
|
¥35.482
|
|
|
¥35.482
|
|
|
¥32.0129
|
|
|
¥31.9338
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
栅极驱动器 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT
- LMG3411R050RWHR
- Texas Instruments
-
2,000:
¥74.693
-
无库存交货期 12 周
|
Mouser 零件编号
595-LMG3411R050RWHR
|
Texas Instruments
|
栅极驱动器 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT
|
|
无库存交货期 12 周
|
|
|
¥74.693
|
|
|
报价
|
|
|
报价
|
|
最低: 2,000
倍数: 2,000
:
2,000
|
|
|
|
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT
- LMG3422R030RQZR
- Texas Instruments
-
2,000:
¥98.4343
-
无库存交货期 12 周
|
Mouser 零件编号
595-LMG3422R030RQZR
|
Texas Instruments
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT
|
|
无库存交货期 12 周
|
|
最低: 2,000
倍数: 2,000
:
2,000
|
|
|
|
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3425R030RQZT
- LMG3425R030RQZR
- Texas Instruments
-
2,000:
¥118.9438
-
无库存交货期 12 周
|
Mouser 零件编号
595-LMG3425R030RQZR
|
Texas Instruments
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3425R030RQZT
|
|
无库存交货期 12 周
|
|
最低: 2,000
倍数: 2,000
:
2,000
|
|
|
|
|
交流/直流转换器 85 W (85-265 VAC)
- INN3270C-H114-TL
- Power Integrations
-
2,000:
¥21.8316
-
无库存交货期 10 周
|
Mouser 零件编号
869-INN3270C-H114-TL
|
Power Integrations
|
交流/直流转换器 85 W (85-265 VAC)
|
|
无库存交货期 10 周
|
|
最低: 2,000
倍数: 2,000
:
2,000
|
|
|
|
|
GaN 场效应晶体管 650V, 35mohm GaN FET in TO247-4L
- TP65H035G4YS
- Renesas Electronics
-
1,200:
¥47.234
-
无库存交货期 26 周
|
Mouser 零件编号
227-TP65H035G4YS
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 35mohm GaN FET in TO247-4L
|
|
无库存交货期 26 周
|
|
最低: 1,200
倍数: 1,200
|
|
|
|
|
栅极驱动器 High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
- MASTERGAN3
- STMicroelectronics
-
1,560:
¥31.2671
-
无库存交货期 26 周
|
Mouser 零件编号
511-MASTERGAN3
|
STMicroelectronics
|
栅极驱动器 High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
|
|
无库存交货期 26 周
|
|
最低: 1,560
倍数: 1,560
|
|
|
|
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
- MASTERGAN5TR
- STMicroelectronics
-
3,000:
¥33.9113
-
无库存交货期 26 周
|
Mouser 零件编号
511-MASTERGAN5TR
|
STMicroelectronics
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
|
|
无库存交货期 26 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频放大器 8.5-10.5 GHz 2W
- QPA2610TR7
- Qorvo
-
500:
¥283.9125
-
无库存交货期 15 周
|
Mouser 零件编号
772-QPA2610TR7
|
Qorvo
|
射频放大器 8.5-10.5 GHz 2W
|
|
无库存交货期 15 周
|
|
最低: 500
倍数: 500
:
500
|
|
|
|
|
射频放大器 100 W S-Bd GaN PA
- QPA3055P
- Qorvo
-
10:
¥11,416.0623
-
无库存交货期 17 周
|
Mouser 零件编号
772-QPA3055P
|
Qorvo
|
射频放大器 100 W S-Bd GaN PA
|
|
无库存交货期 17 周
|
|
最低: 10
倍数: 10
|
|
|
|
|
RF 开关 IC 50W, 0.15-2.8GHz GaN SP3T
- QPC1006
- Qorvo
-
100:
¥723.1209
-
无库存交货期 24 周
|
Mouser 零件编号
772-QPC1006
|
Qorvo
|
RF 开关 IC 50W, 0.15-2.8GHz GaN SP3T
|
|
无库存交货期 24 周
|
|
|
¥723.1209
|
|
|
查看
|
|
|
报价
|
|
最低: 100
倍数: 100
:
100
|
|
|