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426 存储器模块

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图像	零件编号	制造商	描述	数量	产品	存储容量	存储类型	速度	工作电源电压	最大工作温度	管脚数量
存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8) ADLINK Technology DDR4 2666 260P 4GB non-ECC SO-DIMM DDR4 2666 260P 4GB non-ECC SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 260P 4GB non-ECC SO-DIMM Mouser 零件编号 976-DDR42666260P4GB 新产品	ADLINK Technology	存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)	受限供货情况	SODIMMs	4 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-2666, 16GB, 2Gx72, VLP R-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8) ADLINK Technology DDR4 2666 288P 16GB VLP RDIMM DDR4 2666 288P 16GB VLP RDIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 288P 16GB VLP RDIMM Mouser 零件编号 976-DDR42666288P16G 新产品	ADLINK Technology	存储器模块 DDR4-2666, 16GB, 2Gx72, VLP R-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)	受限供货情况	VLV RDIMMs	16 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	288 Pin
存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(512Mx8) ADLINK Technology DDR4 2666 288P 4GB U-DIMM DDR4 2666 288P 4GB U-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 288P 4GB U-DIMM Mouser 零件编号 976-DDR42666288P4G 新产品	ADLINK Technology	存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(512Mx8)	受限供货情况	UDIMMs	4 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	288 Pin
存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur ADLINK Technology DDR4 2666 260P 16GB ECC SO-DIMM DDR4 2666 260P 16GB ECC SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 260P 16GB ECC SO-DIMM Mouser 零件编号 976-DDR42260P16GBE 新产品	ADLINK Technology	存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur	受限供货情况	SODIMMs, ECC	16 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8) ADLINK Technology DDR4 2666 260P 8GB non-ECC SO-DIMM DDR4 2666 260P 8GB non-ECC SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 260P 8GB non-ECC SO-DIMM Mouser 零件编号 976-DDR42666260P8GNE 新产品	ADLINK Technology	存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)	受限供货情况	SODIMMs	8 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(512Mx16) ADLINK Technology DDR4 2666 4GB SO-DIMM DDR4 2666 4GB SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 4GB SO-DIMM Mouser 零件编号 976-DDR426664GBSO 新产品	ADLINK Technology	存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(512Mx16)	受限供货情况	SODIMMs	4 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur, hight:30mm ADLINK Technology Transcend DDR4 260P 3200MHz 8G Transcend DDR4 260P 3200MHz 8G ADLINK Technology 受限供货情况新产品	制造商零件编号 Transcend DDR4 260P 3200MHz 8G Mouser 零件编号 976-TRANDDR4260P8G 新产品	ADLINK Technology	存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur, hight:30mm	受限供货情况	SODIMMs	8 GB	DDR4		1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-2666, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:-40 85, Fix Die:No, Samsung Chip(2Gx8), anti-sulfur, hight:30mm ADLINK Technology DDR4 2666 ECC 32GB SO-DIMM DDR4 2666 ECC 32GB SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 ECC 32GB SO-DIMM Mouser 零件编号 976-DDR42666EGBSO 新产品	ADLINK Technology	存储器模块 DDR4-2666, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:-40 85, Fix Die:No, Samsung Chip(2Gx8), anti-sulfur, hight:30mm	受限供货情况	SODIMMs, ECC	32 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8) ADLINK Technology 8G SOD DDR4 2666 DDR4 SDRAM 8G SOD DDR4 2666 DDR4 SDRAM ADLINK Technology 受限供货情况新产品	制造商零件编号 8G SOD DDR4 2666 DDR4 SDRAM Mouser 零件编号 976-8GSODDDR42666 新产品	ADLINK Technology	存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)	受限供货情况	SODIMMs	8 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-2666, 16GB, 2Gx64, U-DIMM 288P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8) ADLINK Technology DDR4 2666 288P 16GB U-DIMM DDR4 2666 288P 16GB U-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 288P 16GB U-DIMM Mouser 零件编号 976-DDR42666288P16GB 新产品	ADLINK Technology	存储器模块 DDR4-2666, 16GB, 2Gx64, U-DIMM 288P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)	受限供货情况	UDIMMs	16 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	288 Pin
存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8) ADLINK Technology DDR4 2666 288P 4GB U-DIMM non-ECC DDR4 2666 288P 4GB U-DIMM non-ECC ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR4 2666 288P 4GB U-DIMM non-ECC Mouser 零件编号 976-DDR42666288P4GNE 新产品	ADLINK Technology	存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)	受限供货情况	UDIMMs	4 GB	DDR4	2666 MT/s	1.2 V	+ 85 C	288 Pin

426 存储器模块

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