426 存储器模块

结果: 36
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 产品 存储容量 存储类型 速度 工作电源电压 最大工作温度 管脚数量
ADLINK Technology DDR4 2666MHZ 260P 16GB SODIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8) 无库存
最低: 1
倍数: 1
SODIMMs 16 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology Innodisk DDR4 260P 3200MHz 16G
ADLINK Technology 存储器模块 DDR4-3200, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No, Chip(1Gx8) 无库存
最低: 1
倍数: 1
SODIMMs 16 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 288P 16GB ECC U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, U-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:Yes(C-die), Samsung Chip(1Gx8), anti-sulfur
UDIMMs, ECC 16 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 260P 3200MHz 16G 2GX8
ADLINK Technology 存储器模块 DDR4-3200, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(A-die), Samsung Chip(2Gx8), hight:30mm
SODIMMs 16 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology Transcend DDR4 260P 3200MHz 32G
ADLINK Technology 存储器模块 DDR4-3200, 32GB, 4Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(A-die), Samsung Chip(2Gx8), anti-sulfur, hight:30mm
SODIMMs 32 GB DDR4 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666-19 288P 16GB ECC DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Samsung Fix Die:Yes(C-die), Chip(1Gx8), anti-sulfur
SODIMMs, ECC 16 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666MHZ 260P 4GB SODIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0 85, Fix Die:No, Chip(512Mx8)
SODIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 260P 4GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)
SODIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 288P 16GB VLP RDIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, VLP R-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
VLV RDIMMs 16 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 4GB U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(512Mx8)
UDIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 260P 16GB ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
SODIMMs, ECC 16 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 260P 8GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)
SODIMMs 8 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 4GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(512Mx16)
SODIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology Transcend DDR4 260P 3200MHz 8G
ADLINK Technology 存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur, hight:30mm
SODIMMs 8 GB DDR4 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 260P 16GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)
SODIMMs 16 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 260P 2GB non-ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 2GB, 256Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(256Mx16)
SODIMMs 2 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 260P 16GB ECC SO-DIMM INDUS
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
SODIMMs, ECC 16 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 288P 8GB U-DIMM non-ECC
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx64, U-DIMM 288P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)
UDIMMs 8 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 4GB ECC U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx72, U-DIMM 288P, 1.2V, Rank:1, CL19, ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(512Mx8), anti-sulfur
UDIMMs, ECC 4 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 32GB RDIMM ECC
ADLINK Technology 存储器模块 DDR4-2666, 32GB, 4Gx72, R-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85
RDIMMs, ECC 32 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology INNODISK DDR4 260P 3200MHZ 8G
ADLINK Technology 存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No, Chip(1Gx8)
SODIMMs 8 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 ECC 32GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:-40 85, Fix Die:No, Samsung Chip(2Gx8), anti-sulfur, hight:30mm
SODIMMs, ECC 32 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology 8G SOD DDR4 2666 DDR4 SDRAM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
SODIMMs 8 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 288P 16GB U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx64, U-DIMM 288P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)
UDIMMs 16 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 4GB U-DIMM non-ECC
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)
UDIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin