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onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03/13/2026
Designed for compact and efficient designs, including high thermal performance.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Qorvo QPD2560L 300W GaN/SiC HEMT
Qorvo QPD2560L 300W GaN/SiC HEMT
03/09/2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03/06/2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03/05/2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03/05/2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
Infineon Technologies N沟道OptiMOS™ 7 80V功率MOSFET
Infineon Technologies N沟道OptiMOS™ 7 80V功率MOSFET
03/05/2026
80V N沟道标准电平设备，热阻优异，PG‑TDSON‑8封装。
EPC EPC2302 Enhancement-Mode GaN Power Transistor
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03/05/2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
02/26/2026
Switches are designed to block voltage in both directions, with unique substrate-clamp technology.
Navitas Semiconductor NV60x GaNFast™ Power FETs
Navitas Semiconductor NV60x GaNFast™ Power FETs
02/26/2026
Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
02/26/2026
Designed to block voltage in both directions using unique substrate clamp technology.
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs
02/19/2026
Features low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.
TDK-Lambda i1R ORing MOSFET模块
TDK-Lambda i1R ORing MOSFET模块
02/05/2026
高效低损耗的功率设备，旨在取代传统的二极管。
IXYS X4级功率MOSFET
IXYS X4级功率MOSFET
02/02/2026
导通电阻和导通损耗低，效率更高。
Qorvo QPD1014A GaN输入匹配晶体管
Qorvo QPD1014A GaN输入匹配晶体管
01/20/2026
一款输出功率 (P3dB)为15W、输入阻抗匹配为50Ω的分立式GaN-on-SiC HEMT，其工作频率范围为30MHz至1.2GHz。
Qorvo QPD1004A GaN输入匹配晶体管
Qorvo QPD1004A GaN输入匹配晶体管
01/19/2026
25W、50Ω输入匹配分立式GaN-on-SiC HEMT，在50V电源轨下运行，工作频率范围为30MHz至1400MHz。
Qorvo QPD1011A GaN输入匹配晶体管
Qorvo QPD1011A GaN输入匹配晶体管
01/19/2026
一款输出功率(P3dB)为7W、输入阻抗匹配特性为50Ω的分立式GaN-on-SiC HEMT，其工作频率范围为30MHz至1.2GHz。
onsemi NVBYST0D6N08X 80V N沟道功率MOSFET
onsemi NVBYST0D6N08X 80V N沟道功率MOSFET
12/26/2025
该器件具有低QRR和软恢复体二极管，采用TCPAK1012 (TopCool) 封装。
Infineon Technologies OptiMOS™ 6 80V功率MOSFET
Infineon Technologies OptiMOS™ 6 80V功率MOSFET
12/23/2025
凭借广泛的产品组合确立了行业性能基准。
Infineon Technologies CoolSiC™车规级750V G2 MOSFET
Infineon Technologies CoolSiC™车规级750V G2 MOSFET
12/19/2025
专为满足电动汽车 (EV) 应用的严格要求而设计。
onsemi NVMFD5877NL双N沟道MOSFET
onsemi NVMFD5877NL双N沟道MOSFET
12/19/2025
专为紧凑高效的设计而打造，具有优异的热性能。
onsemi NxT2023N065M3S EliteSiC MOSFET
onsemi NxT2023N065M3S EliteSiC MOSFET
12/04/2025
具有低有效输出电容和超低栅极电荷特性。
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