ART LDMOS RF Power Transistors

Ampleon Advanced Rugged Technology (ART) LDMOS RF Power Transistors are designed to cover a wide range of applications for ISM, broadcast, and communications. These power transistors feature dual-sided ESD protection, enabling class C operation and complete switch-off. The ART LDMOS RF power transistors offer high efficiency, excellent thermal stability, and excellent ruggedness with no device degradation. These power transistors feature nominal output powers of 35W and 2500W. The ART LDMOS RF power transistors are ideal for industrial, scientific, medical, broadcast, and radar applications.

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Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART35FE/SOT467C/TRAY 234库存量
最低: 1
倍数: 1

N-Channel LDMOS 65 V 1.6 Ohms 1 MHz to 650 MHz 31 dB 35 W + 225 C Screw Mount SOT467C-3 Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K5TPU/OMP-1230-6F/T&R

Dual N-Channel LDMOS 75 V 106 mOhms 1 MHz to 400 MHz 28..5 dB 2.5 kW + 225 C SMD/SMT OMP-1230-6F-2-7 Reel